Conference paper
Etch tailoring through flexible end-point detection
D. Angell, G.S. Oehrlein
SPIE Processing Integration 1990
A kinetic study of thermal donor formation in 450 °C heat-treated modern silicon crystals has been performed and it is concluded that SiO 3 complexes are the dominant thermal donor species (for heat-treatment times of up to about 100 h), rather than SiO4 complexes. Clusters containing a number of oxygen atoms other than three or four seem to be also electrically active.
D. Angell, G.S. Oehrlein
SPIE Processing Integration 1990
A. Henry, B. Monemar, et al.
Journal of Applied Physics
H. Weman, J.L. Lindström, et al.
Journal of Applied Physics
P. Spirito, C.M. Ransom, et al.
Solid-State Electronics