M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Paper
Some electrical properties of the semiconductor βGa2O3
Abstract
The wide-band gap semiconductor βGa2O3 has an electron mobility of the order of 100 cm2/V-sec at room temperature. Single crystals grown under reducing conditions have about 2 × 1018 free carriers, apparently due to anion vacancies. © 1967.
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