E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Paper
Some electrical properties of the semiconductor βGa2O3
Abstract
The wide-band gap semiconductor βGa2O3 has an electron mobility of the order of 100 cm2/V-sec at room temperature. Single crystals grown under reducing conditions have about 2 × 1018 free carriers, apparently due to anion vacancies. © 1967.
Related
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Hiroshi Ito, Reinhold Schwalm
JES
Frank Stem
C R C Critical Reviews in Solid State Sciences