Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Evaluation of the magnetic gaps of the (TMTTF) and (TCNQ) stacks with the help of the temperature dependence of the measured g-values leads to the conclusion that the (TCNQ) stack is driving the metal-insulator transition. The relative sizes of the magnetic gaps on the (TMTTF) and (TCNQ) stacks are compatible with the existence of only one phase transition. A comparison with (TTF)(TCNQ) is made and the lower transition temperature observed for (TMTTF)(TCNQ) is in agreement with the smaller gap observed in this compound for the (TNNQ) stack. © 1976.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Sung Ho Kim, Oun-Ho Park, et al.
Small
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron