A. Gangulee, R.L. Anderson
Journal of Electronic Materials
Stress enhancement of grain boundary diffusion of Be in thin Al films was investigated using a new experimental technique. Plane biaxial tensile stresses were found to promote lateral penetration of Be along the grain boundaries of A1 films. © 1970, Taylor & Francis Group, LLC. All rights reserved.
A. Gangulee, R.L. Anderson
Journal of Electronic Materials
R.J. Miller, A. Gangulee
Thin Solid Films
A. Gangulee, R.J. Kobliska
Journal of Applied Physics
A. Gangulee, F.M. D'Heurle
Applied Physics Letters