Conference paper
LOW-TEMPERATURE MAGNETOTRANSPORT IN InAs-GaSb QUANTUM WELLS.
E. Mendez, S. Washburn, et al.
ICPS Physics of Semiconductors 1984
We have used the cross-sectional transmission electron microscope to study InAs grown by molecular beam epitaxy. For the InAs films directly grown on GaAs, the dislocation density at the InAs-GaAs interface is several orders of magnitude higher than that in the bulk films. Those grown by the step grading technique show strong interactions among dislocations at the interfaces, and a much reduced dislocation density in the thin InAs layers.
E. Mendez, S. Washburn, et al.
ICPS Physics of Semiconductors 1984
J.C. Maan, M. Altarelli, et al.
Surface Science
L.L. Chang, N. Kawai, et al.
Applied Physics Letters
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Superlattices and Microstructures