PaperHafnium oxide gate dielectrics on sulfur-passivated germaniumMartin M. Frank, Steven J. Koester, et al.Applied Physics Letters
Conference paperStrained Si channel MOSFETs with embedded silicon carbon formed by solid phase epitaxyYaocheng Liu, Oleg Gluschenkov, et al.VLSI Technology 2007
Conference paperDual beam laser annealing for contact resistance reduction and its impact on VLSI integrated circuit variabilityZuoguang Liu, Oleg Gluschenkov, et al.VLSI Technology 2017
Conference paperA comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETsChoonghyun Lee, Shogo Mochizuki, et al.IEDM 2017
