PaperQuantification of local strain distributions in nanoscale strained SiGe FinFET structuresShogo Mochizuki, Conal E. Murray, et al.Journal of Applied Physics
PaperHafnium oxide gate dielectrics on sulfur-passivated germaniumMartin M. Frank, Steven J. Koester, et al.Applied Physics Letters
PaperNanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holographyYun-Yu Wang, David Cooper, et al.Applied Physics Letters
Conference paperNBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet TransistorHuimei Zhou, Miaomiao Wang, et al.IRPS 2020
