Yun-Yu Wang, J. Nxumalo, et al.
Applied Physics Letters
Paper
Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices
Abstract
The effect of cluster carbon implantation and recrystallization on properties of phosphorus doped Si (Si
Related
Juntao Li, Shogo Mochizuki, et al.
ISTFA 2022
Choonghyun Lee, Richard G. Southwick, et al.
ASICON 2017
Richard G. Southwick, Miaomiao Wang, et al.
VLSI Technology 2019