B.D. Schrag, A. Anguelouch, et al.
Journal of Applied Physics
We present the results of differential resistance (dV/dI) measurement on high-transmittance Nb-Ag (or Al) microjunctions. At low bias, dV/dI has the conventional Blonder-Tinkham-Klapwijk double-dip structure plus a sharp single dip at zero bias. This zero-bias anomaly is completely suppressed by a modification in interface. It is insensitive to magnetic field. We relate it to the electron phase-coherence effect in the proximity of superconducting gap potential Δ. Above Δ/e, dV/dI exhibits an anomalous peak, whose position is found to be proportional to Δ(T,H). © 1993 The American Physical Society.
B.D. Schrag, A. Anguelouch, et al.
Journal of Applied Physics
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Physical Review B - CMMP
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Physical Review Letters
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