The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements

T.H. DiStefano; D.E. Eastman

doi:10.1016/0038-1098(71)90643-0

Solid State Communications

Paper

15 Dec 1971

The band edge of amorphous SiO₂ by photoinjection and photoconductivity measurements

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Abstract

Photoconductivity measurements indicate an interband gap of 9.0 eV in amorphous SiO2. Correspondingly, a gap of 8.9 ± 0.2 eV is seen in photoinjection measurements which are insensitive to band edge selection rules. © 1971.

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Abstract

Related

Investigation of the numerical accuracy of transmission line-based transient analysis of high-speed interconnects and cables

Metastable phase formation in thin film reactions

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NEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.