The electronic structure of impurities and defects in SiO2

Sokrates T. Pantelides

doi:10.1016/0040-6090(82)90489-8

Thin Solid Films

Paper

05 Mar 1982

The electronic structure of impurities and defects in SiO₂

View publication

Abstract

We describe a simple tight-binding model which gives qualitative understanding and quantitative estimates of the electronic energy levels of several classes of impurities, defects and impurity complexes in SiO2. © 1982.

Talk

Enhanced Room Temperature Photoluminescence Quantum Yield in Morphology-Controlled J-Aggregates

Surendra B. Anantharaman, Joachim Kohlbrecher, et al.

MRS Fall Meeting 2020

Review

Solution-processed inorganic semiconductors

David B. Mitzi

Journal of Materials Chemistry

Paper

Surface crystallography of the c(2×2) sodium overlayer on Al(100)

B.A. Hutchins, T.N. Rhodin, et al.

Surface Science

Paper

Scanning tunneling microscopy and spectroscopy of thin metal films on the GaAs(110) surface

P. Martensson, R.M. Feenstra

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

View all publications

Abstract

Related

Enhanced Room Temperature Photoluminescence Quantum Yield in Morphology-Controlled J-Aggregates

Solution-processed inorganic semiconductors

Surface crystallography of the c(2×2) sodium overlayer on Al(100)

Scanning tunneling microscopy and spectroscopy of thin metal films on the GaAs(110) surface