R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
The rate equations for carriers injected into an amorphous semiconductor are considered for a simple model with radiative recombination of injected electron and holes and with emission and absorption of optical phonons of a single energy. The approximate energy dependence of the rate coefficients is calculated for a model of the band tail states. A steady-state solution of the rate equations is compared with experimental results for luminescence and photoconductivity in amorphous As2Te2Se. © 1972.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
T.N. Morgan
Semiconductor Science and Technology
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Surface Science
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Technical Digest-International Electron Devices Meeting