Mark W. Dowley
Solid State Communications
Poly(4-chloro and bromophthalaldehydes) sensitized with triphenylsulfonium hexafluoroantimonate develop to the substrate upon postbaking at >100°C for 1 min after exposure to less than 1 mJ/cm2 of 254 nm radiation or less than 1 μC/cm2 of 18 keV E-beam radiation, providing submicron resolution with vertical wall profiles and full thickness retention. The resists do not self-develop under these exposure conditions and do not exhibit any thermal flow when postbaked at 160°C. © 1989, The Electrochemical Society, Inc. All rights reserved.
Mark W. Dowley
Solid State Communications
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
J.K. Gimzewski, T.A. Jung, et al.
Surface Science