Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
The electrical resistance of thin Cu films was measured in the deposition chamber. Copper was deposited on silicon dioxide surfaces to reduce surface pinning or adhesion effects and allow high mobility. The recrystalization effect occurs over a period of hours to hundreds of hours for films of 4.5 to 100 nm thickness.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
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ACS Nano
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Physical Review B
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APS Global Physics Summit 2025