Pouya Hashemi, Judy L. Hoyt
IEEE Electron Device Letters
Surface-channel strained-Ge (s-Ge) p-MOSFETs with high-K/metal gate stack and ozone surface passivation are fabricated, for the first time. The channel is ultrathin (∼3-6 nm thick) s-Ge (∼2.2%, biaxial compression) epitaxially grown on a relaxed Si 0.56Ge 0.44 virtual substrate. Split capacitance-voltage measurements along with quantum-mechanical simulations demonstrate a capacitance-equivalent thickness of 1.3 nm and sub-1-nm equivalent oxide thickness. The effective hole mobility of these devices was extracted and exhibits 3 × and 2.2 × mobility enhancement over universal Si hole mobility, for s-Ge channel thicknesses of ∼6 and ∼ 3 nm, respectively. © 2012 IEEE.
Pouya Hashemi, Judy L. Hoyt
IEEE Electron Device Letters
A. Khakifirooz, Kangguo Cheng, et al.
VLSI Technology 2012
Winston Chern, Pouya Hashemi, et al.
IEDM 2012
James T. Teherani, Sapan Agarwal, et al.
Journal of Applied Physics