Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

S. Sayan; R.A. Bartynski; X. Zhao; E. Gusev; D. Vanderbilt; M. Croft; M. Banaszak Holl; E. Garfunkel

doi:10.1002/pssb.200404945

physica status solidi (b)

Conference paper

23 Jul 2004

Valence and conduction band offsets of a ZrO₂/SiO _xN_y/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

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Abstract

The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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