P.W. Li, E.S. Yang, et al.
IEEE Electron Device Letters
Paper
Variation of the ideality factor in the curent-voltage characteristics of double-heterostructure diodes
Abstract
The low-current I-V characteristics of AlxGa1-xAs- GaAs DH laser diodes have been investigated. The variation of the ideality factor is explained by taking into account the interaction of the thermionic-field emission and interface charge. Both theoretical calculations and experimental data are presented here to show the validity of our model.