Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We investigate the conductance properties of double-barrier quantum well resonant tunneling heterostructures, laterally confined by a Schottky gate such that the confinement can be varied in a continuous and controlled way. Data on dots with nominal diameters in the submicron range are reported. © 1992.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Ronald Troutman
Synthetic Metals