PaperLattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxyT.J. De Lyon, J. Woodall, et al.Applied Physics Letters
Conference paperGaAs MESFET 16 × 16 crosspoint switch at 1700 Mbits/secC.J. Anderson, J.H. Magerlein, et al.GaAs IC 1987
PaperIVA-7 A New High Purity Si Doping Source for MBE Grown GaAs DevicesP.D. Kirchner, J. Woodall, et al.IEEE T-ED
PaperAn isothermal etchback-regrowth method for high-efficiency Ga1-xAlxAsGaAs solar cellsJ. Woodall, H.J. HovelSolar Cells