A 2.57mW 5.9-8.4GHz Cryogenic FinFET LNA for Qubit Readout
Jean-Olivier Plouchart, Dereje Yilma, et al.
RFIC 2022
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
Jean-Olivier Plouchart, Dereje Yilma, et al.
RFIC 2022
Damon B. Farmer, Yu-Ming Lin, et al.
Applied Physics Letters
Xiaoxiong Gu, Duixian Liu, et al.
ECTC 2014
Meng-Hsi Chuang, Kuan-Chang Chiu, et al.
Advanced Functional Materials