Conference paper
SILICIDE CONTACT AND GATE IN MICROELECTRONIC DEVICES.
K.N. Tu
International Symposium on Methods and Materials in Microelectronic Technology 1982
A wetting experiment with a Au-Si eutectic melt on surfaces of fused and single-crystal quartz has been performed in an atmosphere of He. The wetting shows that the melt reacts with quartz and the wetting angle is about 10°.
K.N. Tu
International Symposium on Methods and Materials in Microelectronic Technology 1982
M.O. Aboelfotoh, K.N. Tu, et al.
Journal of Applied Physics
K.N. Tu
IEEE T-ED
I. Ohdomari, T.S. Kuan, et al.
Journal of Applied Physics