PaperLow-temperature diffusion of dopant atoms in silicon during interfacial silicide formationM. Wittmer, K.N. TuPhysical Review B
PaperHigh-Resolution Depth Profiling of Ultrathin Silicon Oxide/Nitride/Oxide LayersG.M.W. Kroesen, G.S. Oehrlein, et al.JES
Conference paperSiGe-base PNP transistors fabricated with N-type UHV/CVD LTE in a 'No Dt' processD.L. Harame, J.M.C. Stork, et al.VLSI Technology 1990
PaperIon beam enhanced diffusion of B during Si molecular beam epitaxyP.R. Pukite, Subramanian S. Iyer, et al.Applied Physics Letters
