Publications

28 results for Catherine Labelle

65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- - V. McGahay
  - G. Bonilla
  - et al.
- 2006
- IITC 2006
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- - K. Ida
  - S. Nguyen
  - et al.
- 2005
- AMC 2005
Nanoporous materials integration into advanced microprocessors
- - E. Todd Ryan
  - Cathy Labelle
  - et al.
- 2005
- MRS Spring Meeting 2005
Lower-k SiCOH integration for 65 nm ground rules
- - T. Nogami
  - S. Lane
  - et al.
- 2005
- VMIC 2005
Plasma induced dielectric modification: Etching challenges for 65nm and beyond technology nodes
- - N. Fuller
  - M.A. Worsley
  - et al.
- 2005
- ISTC 2005
Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- - T. Nogami
  - S. Lane
  - et al.
- 2005
- Optics East 2005
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
- - W.-H. Lee
  - A. Waite
  - et al.
- 2005
- IEDM 2005
Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing
- - T. Dalton
  - N. Fuller
  - et al.
- 2004
- IITC 2004