Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- J.H. Comfort
- G.L. Patton
- et al.
- 1990
- IEDM 1990
Publications
131 results for J. Warnock
Sub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistors
- J.N. Burghartz
- J.H. Comfort
- et al.
- 1990
- IEDM 1990
A 26 ps self-aligned epitaxial silicon base bipolar technology
- J.H. Comfort
- P.F. Lu
- et al.
- 1990
- VLSI Technology 1990
Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing
- G. Shahidi
- B. Davari
- et al.
- 1990
- IEDM 1990
Scaling The Silicon Bipolar Transistor For Sub-100-Ps Ecl Circuit Operation At Liquid Nitrogen Temperature
- John D. Cressler
- Tze-Chiang Chen
- et al.
- 1990
- IEEE T-ED
50-GHz Self-Aligned Silicon Bipolar Transistors with Ion-Implanted Base Profiles
- James Warnock
- John D. Cressler
- et al.
- 1990
- IEEE Electron Device Letters
Magnetoreflectivity study of excitons in (Zn,Co)Se epilayers
- X. Liu
- A. Petrou
- et al.
- 1989
- Applied Physics Letters
Boron-doped emitters for high-performance vertical pnp transistors
- J. Warnock
- P.F. Lu
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
Magnetic manifestations of carrier localization in quantum well
- D.D. Awschalom
- J. Warnock
- et al.
- 1989
- QELS 1989
23 ps/2.1 mW ECL gate
- Kai-Yap Toh
- C.T. Chuang
- et al.
- 1989
- ISSCC 1989