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Electrical and materials characterization of reactive and co-sputtered tantalum carbide metal electrodes for high-K gate applicationsL.F. EdgeT. Voet al.2009ECS Meeting 2009
Engineering band-edge high-κ/metal gate n-MOSFETs with cap layers containing group IIA and IIIB elements by atomic layer depositionH. JagannathanL.F. Edgeet al.2009ECS Meeting 2009
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cellB. HaranA. Kumaret al.2008IEDM 2008
High-K gate dielectric structures by atomic layer deposition for the 32nm and beyond nodesR.D. ClarkS. Consiglioet al.2008ECS Meeting 2008
Process and electrical characteristics of MO-ALD HfO2 films for high-K gate applications grown in a production-worthy 300 mm deposition systemR.D. ClarkC.S. Wajdaet al.2007ECS Meeting 2007
Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on siliconL.F. EdgeD.G. Schlomet al.2004Applied Physics Letters