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High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressorB. YangR. Takalkaret al.2008IEDM 2008
SMT and enhanced SPT with Recessed SD to improve CMOS Device PerformanceS. FangS.S. Tanet al.2008ICSICT 2008
Recent progress and challenges in enabling embedded Si:C technologyB. YangZ. Renet al.2008ECS Meeting 2008
(110) Channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (R ext) engineeringB. YangA. Waiteet al.2007IEDM 2007
Mechanism of solid phase crystallization of prepatterned nanoscale α-Si pillarsHyun-Jin ChoBrian J. Greeneet al.2007Journal of Applied Physics
Integration of local stress techniques with strained-Si directly on insulator (SSDOI) substratesHaizhou YinZ. Renet al.2006VLSI Technology 2006
Design of high performance PFETs with strained Si channel and laser annealZ. LuoY.F. Chonget al.2005IEDM 2005