Reduction in dislocation densities in the step-graded growth of InGaAs by molecular-beam epitaxy
- C.M. Serrano
- Chin-An Chang
- 1981
- Applied Physics Letters
Publications
2347 results at Applied Physics Letters
Schottky barriers: An effective work function model
- J. Freeouf
- J. Woodall
- 1981
- Applied Physics Letters
Volatile metal-oxide incorporation in layers of GaAs, Ga 1-xAlxAs and related compounds grown by molecular beam epitaxy
- P.D. Kirchner
- J. Woodall
- et al.
- 1981
- Applied Physics Letters
Diffusion of gold in silicon: A new model
- U. Gösele
- F.F. Morehead
- et al.
- 1981
- Applied Physics Letters
Contact reaction between Si and rare earth metals
- R.D. Thompson
- B.Y. Tsaur
- et al.
- 1981
- Applied Physics Letters
Polysilicon recrystallization by CO2 laser heating of SiO 2
- Z.A. Weinberg
- 1981
- Applied Physics Letters
A technique for comparing the bulk and surface structure of defects in thin films using the scanning transmission electron microscope.
- M.M.J. Treacy
- W. Krakow
- et al.
- 1981
- Applied Physics Letters
Identification of electron traps in thermal silicon dioxide films
- A. Hartstein
- D.R. Young
- 1981
- Applied Physics Letters
Pyrometric measurement of temperature during cw argon-ion laser annealing and the solid-state regrowth rate of amorphous Si
- T.O. Sedgwick
- 1981
- Applied Physics Letters
Proximate capless annealing of GaAs using a controlled-excess As vapor pressure source
- J. Woodall
- H. Rupprecht
- et al.
- 1981
- Applied Physics Letters