Publications

307 results at IEEE Electron Device Letters

Depletion-Mode GaAs SISFET's By Selective Ion Implantation
- - H. Baratte
  - Paul M. Solomon
  - et al.
- 1987
- IEEE Electron Device Letters
Lateral Encroachment of Extrinsic-Base Dopant in Submicrometer Bipolar Transistors
- - Pong-Fei Lu
  - G.P. Li
  - et al.
- 1987
- IEEE Electron Device Letters
Bipolar Transistor with Self-Aligned Lateral Profile
- - G.P. Li
  - Tze-Chiang Chen
  - et al.
- 1987
- IEEE Electron Device Letters
Effect of Off-Axis Implant on the Characteristics of Advanced Self-Aligned Bipolar Transistors
- - Ching-Te Chuang
  - G.P. Li
  - et al.
- 1987
- IEEE Electron Device Letters
Transient Switching of the Parasitic Bipolar Device of an Epitaxial CMOS Transistor
- - Wen-Hsing Chang
  - M.D. Rodriguez
- 1987
- IEEE Electron Device Letters
Symmetric-Gain, Zero-Offset, Self-Aligned, and Refractory-Contact Double HBT's
- - Sandip Tiwari
  - Steven L. Wright
- 1987
- IEEE Electron Device Letters
EXCIMER LASER PROJECTION LITHOGRAPHY ON A FULL-FIELD SCANNING PROJECTION SYSTEM.
- - R.T. Kerth
  - K. Jain
  - et al.
- 1986
- IEEE Electron Device Letters
Device-grade ultra-shallow junctions fabricated with antimony
- - George A. Sai-Halasz
  - H.B. Harrison
- 1986
- IEEE Electron Device Letters
Scaled GaAs MESFET's with gate length down to 100 nm
- - Heinz Jaeckel
  - Volker Graf
  - et al.
- 1986
- IEEE Electron Device Letters
Sub-400-ps ISL circuits
- - Ching-Te Chuang
  - G.P. Li
  - et al.
- 1986
- IEEE Electron Device Letters