Publications

166 results at Journal of Crystal Growth

Growth and characterization of in-situ (In,Ga)As ohmic contacts to n-GaAs
- - S.L. Wright
  - R.F. Marks
  - et al.
- 1989
- Journal of Crystal Growth
Surface diffusion effects in MBE growth of QWs on channeled substrate (100) GaAs for lasers
- - H.P. Meier
  - E. Van Gieson
  - et al.
- 1989
- Journal of Crystal Growth
Influence of surface morphology upon recovery kinetics during interrupted epitaxial growth
- - S. Clarke
  - D.D. Vvedensky
  - et al.
- 1989
- Journal of Crystal Growth
Heteroepitaxy of InAs quantum wells
- - H. Munekata
  - T.P. Smith III
  - et al.
- 1989
- Journal of Crystal Growth
Growth of abrupt Ge layers in Si (100)
- - Subramanian S. Iyer
  - P.R. Pukite
  - et al.
- 1989
- Journal of Crystal Growth
Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs
- - B. Lee
  - S.S. Bose
  - et al.
- 1989
- Journal of Crystal Growth
Compensation mechanisms in n⁺-GaAs doped with sulphur
- - R. Venkatasubramanian
  - S.K. Ghandhi
  - et al.
- 1989
- Journal of Crystal Growth
Gas phase and surface reactions in Si doping of GaAs by silanes
- - Harry K. Moffat
  - T.F. Kuech
  - et al.
- 1988
- Journal of Crystal Growth
The control and modeling of doping profiles and transients in MOVPE growth
- - T.F. Kuech
  - P.J. Wang
  - et al.
- 1988
- Journal of Crystal Growth
Recent progress in atomic layer epitaxy of III-V compounds
- - S.M. Bedair
  - B.T. McDermott
  - et al.
- 1988
- Journal of Crystal Growth