Dennis M Newns  Dennis M Newns photo       

contact information

Thomas J. Watson Research Center, Yorktown Heights, NY USA



Dr. Dennis M. Newns is a Research Staff Member at the IBM TJ Watson Research Center. After a PhD at Imperial, London, and postdocs at University of Chicago and Cambridge University, he was appointed Reader at Imperial, before joining IBM Research. His research includes Surface Science, Rare Earth Intermediate Valence and Heavy Fermion Systems, Ferroelectrics, and High Temperature Superconductivity. He is co-inventor of the Mott Transistor and the PiezoElectronic Transistor (PET).

Dennis Newns has 13,000 citations, an h-index of 57, an i10-index of 145 and 50 patents. He is a Fellow of the American Physical Society, and a member of the UK Institute of Physics.


Research Philosophy:
Theory to discover emergent and new physics and promote the understanding of condensed matter with application to Novel Technology

Dennis Newns is a scientist with a clear research philosophy: he is motivated by fundamental understanding of new materials, novel condensed matter systems and their mechanisms. However, he also takes the next step based on this understanding to develop novel technology. In this way, he is able to study and understand new and emergent physics while providing societal impact through industrial engagement and a strong patent portfolio. He has had large center-type government funded projects. In the future he can be expected to perform high quality research that is cross-disciplinary with real applications.

In the following a few key publications and patents are listed.