My specialties are designing electrical test structures, defining their tests, and analyzing their test data to help guide IBM Research's CMOS technology development programs. In 2018, my focus has shifted from FEOL (Front End Of Line) technology for the 10 nm generation to the BEOL (Back End Of Line) for the 7 nm generation, in a team evaluating EUV (Extreme Ultraviolet) lithography. We're assessing whether EUV is a viable replacement for longer wavelength lithography to print the tiny wires, without open or short circuits, required for the 7 nm generation.
Before I joined IBM Research in Albany in 2016, I worked for IBM Microelectronics in East Fishkill, NY for nearly 20 years, on characterization of a broad range of circuit types (DRAM, SRAM, logic, analog, non-volatile memory) within CMOS development programs.
I have B.S., M.S., and Ph.D. degrees in electrical engineering from the University of Virginia, where my research focused on fabricating and characterizing low temperature superconducting tunnel junctions for millimeter wave radio astronomy.