Eduard A. (Ed) Cartier  Eduard A. (Ed) Cartier photo         

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Research Staff Member
Thomas J. Watson Research Center, Yorktown Heights, NY USA



Biography of Eduard A. Cartier, born 02.13.51

Eduard A. Cartier earned the B.E.E degree at the catholic boarding school "Collegium Maria Hilf" in Schwyz, Switzerland and the M.S and Ph.D degrees from the Swiss Federal Institute of Technology in Zurich, Switzerland. In his master thesis he studied the electronic structure of metallic glasses using high resolution X-ray photoelectron spectroscopy and inverse photoelectron spectroscopy. His Ph.D thesis reported on the electronic structure and on atomic defects in graphite intercalation compounds and in metallic glasses as measured with positron annihilation techniques. He received the silver medal of the Swiss Federal Institute of Technology for his outstanding Ph.D thesis. From 1986 to 1988 he worked at the ABB Research Center in Baden-Dattwil, Switzerland. While at ABB, his research centered around hot carrier transport in organic materials such as saturated long chain hydrocarbons and polymers and on dielectric breakdown of polymer insulators in high power applications. Since 1989, he is a research staff member of the IBM Research Division at the T.J. Watson Research Center in Yorktown Heights, NY, USA. His research activities at the T.J. Watson Research Center concentrated around hot carrier transport in silicon and silicon dioxide and around hot carrier induced oxide degradation relevant to FET in CMOS technologies and nonvolatile memory device operation and on the understanding of basic processes relevant to dielectric breakdown. Of particular interest to him was the investigation of the role played by hydrogen in the hot-carrier-induced oxide degradation processes leading to dielectric breakdown and device failure. He obtained two IBM internal awards for outstanding contributions in the field of hot carrier transport in insulators and in the field of oxide reliability predictions for electronic devices. For the last ten years, his work concentrated on the development of CMOS devices with high-k dielectrics and metal gates in the gate stack as a replacement for traditional SiO2/ploy-Si gate stacks.