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Ernest Y. Wu received his M.S. and Ph.D. degrees in physics from university of Kansas, Lawrence, KS, 1986 and 1989, respectively. He has been responsible for technology qualification and development of dielectric reliability methodologies for many generations of CMOS technologies from 250nm to 7nm nodes including SiO2, high-k, and low-k dielectrics in FEOL/BEOL/MOL applications. He has authored and co-authored more than 150 papers and gave numerous invited talks in the international journals and conferences. He has served on dielectric reliability committees in both international reliability physics symposium (IRPS) and international electron device meeting (IEDM). Currently, he is a senior technical staff member in IBM research division and working on a range of challenging and interesting projects from technology and product/circuit reliability issues to memory devices for neuromorphic computing applications. His research interests include statistics, device physics and simulation, dielectric reliability physics and its applications to assessment of product/circuit failures
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