I am a Research Staff Member at the semiconductor research group of the IBM T. J. Watson Research Center in Yorktown Heights, NY. My mission is to advance device research for the acceleration of Artificial Intelligence (AI) platforms.
I received a B.Sc. degree in electrical engineering from Technion – Israel Institute of Technology, Israel in 1988, a M.Sc. degree in physical electronics from Tel-Aviv University in 1993, and a Ph.D. in electrical engineering from Technion – Israel Institute of Technology, in 1998. My dissertation advisor was Prof. Dan Ritter.
In 1996 I was a visiting scholar with Centre national d'études des télécommunications (CNET), France-Telecom labs, Bangneux, France, where I studied the amphoteric carbon doping of InGaAsP layers matched to InP.
Since 1998 I have been with the IBM T.J. Watson Research Center in Yorktown Heights, NY where I had worked on topics such as self-aligned double-gate MOSFETs, silicide for thin SOI, compliant substrates, strained-silicon-on-silicon and mixed orientation substrates. Together with my IBM team we pioneered the study of silicon nanowires for CMOS technology at IBM. My research has also expanded to the study of phase change materials for non-volatile memory. Together with Samsung researchers my team advanced contacts technology for III-V semiconductor devices on silicon substrates. My current research focus is to study devices that can be used for implementing in-memory computation and the acceleration of AI hardware.