Pranita Kerber ( nee Kulkarni) received her M.S. and Ph.D. degrees in Materials Science and Engineering from Carnegie Mellon university, Pittsburgh, PA in 2006 and 2008, respectively.
Dr. Kerber joined IBM Corp. as a Research Staff Member in 2008. She is conducting research in process and device simulation of advanced semiconductor devices and circuits. She has established innovative technologies and concepts that enable state-of-the-art fully depleted planar and multi-gate SOI devices. She continues to make valuable and unique contributions by developing techniques to incorporate strain in the fully-depleted channels and designing abrupt junctions for superior electrostatic integrity and performance of these devices.
She has received more than 100 IBM Invention Achievement Awards and had co-authored more than 60 technical peer-reviewed papers. She is also recipient of 'Research Division Award' for low-power FDSOI technology demonstration. Currently a reviewer for the IEEE Electron Device Letters, APS Applied Physics Letters and Journal of Applied Physics.