Hongwen (Wendy) Yan is a Research Staff Member with IBM T. J. Waston Research Center in Yorktown Height, New York. She joined IBM in July 1997, worked on dielectric etching in the DRAM Development Alliance (IBM, Siemens, and Toshiba) with a focus on small-dimension, high-aspect-ratio features and on etch-lithography interactions. In 2000, she moved to CMOS group leading development and qualification of gate etch technology for IBM server/mainframe and alliance products from 90nm through 22nm, and received two Outstanding Technical Achievement Awards for delivering the industry-leading gate first HiKMG etch process. Currently she works in Advanced Plasma Processing Group of Yorktown Materials Research Lab. Her Primary responsibilities are plasma etching development for Quantum Computing Chip, and Plasma Doping for III V materials. She had three years of prior experience with the Applied Materials Corporation in the areas of metal and oxide etching. Wendy Yan received her Ph.D in Ceramics Materials and Engineering from Rutgers University, where she studied microelectronic substrate materials.