Laura Begon-Lours  Laura Begon-Lours photo         

contact information

Post-Doctoral Researcher
Zurich Research Laboratory, Zurich, Switzerland




Laura Bégon-Lours

Polyvalent, autonomous and dynamic, I enjoy confronting conceptual and technological challenges. During my PhD project, I manipulated ferroelectric and superconducting properties at the nanoscale using near-field microscopy techniques. At MESA+ Institute, I tailored oxide heterostructures at the atomic scale to develop novel polar metals. Currently Marie Curie fellow at IBM, I develop ferroelectric memristors for Neuromorphic computing, in the Neuromorphic Systems and Devices group.

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Skills: Correlated Oxides, Thin-Films, Growth, Characterisation, Clean Room, Lithography,
Atomic Force Microscopy, Cryogenics, Transport Measurements

Research experience

June 2019-..: Post-doctoral researcher at Neuromorphic Devices and System group at IBM Research (Zürich, Switzerland) supervised by J. FOMPEYRINE:

  • Fabrication and characterization of ferroelectric tunnel junctions

May 2017 – May 2019: Post-doctoral researcher at Inorganic Materials Science group at Mesa+ (University of Twente, Nederlands) supervised by G. RIJNDERS and G. KOSTER:

  •  Integration of oxides on III-V semiconductors by PLD
  •  Atomic scale design of ultra-thin ferroelectric film

Oct. 2012- Jan. 2017: PhD student at Unité Mixte de Physique CNRS/Thales at TRT (Palaiseau, France) supervised by Javier E. VILLEGAS and Manuel BIBES:

  •  Growth of ultra-thin superconducting and ferroelectric films by PLD
  •  Design and fabrication of solid state devices
  •  Low temperature magneto-transport measurements
  •  Nanoscale manipulation of ferroelectric states by piezoresponse force microscopy

Jan. - June 2012: Engineering internship in the R&D office of Citroën Racing (Versailles, France): Finite-element method model and calculation

  •  Establishment of a thermomechanical model of a piston and rod, and of a
    flow model in an exhaust manifold
  • Optimization of their design and improvement of their robustness

Apr. - June 2011: Research project in the group LPEM (Physics and Materials Studies) of R. LOBO at ESPCI ParisTech (Paris, France):

  • Finite-element method model and machine-learning to estimate the
    permittivity distribution within a given volume

July - Dec. 2010: R&D internship in SeQureNet, a start-up incubated in the group LIR (Informatics and Networks) at Télécom ParisTech, with E. DIAMANTI:

  • Reverse-engineering and characterisation of opto-electronic devices
  • Characterisation of quantum cryptography protocols

July 2009: Research internship in the group LPM (Photons and Matter) of J. LESUEUR at
ESPCI ParisTech (Paris, France):

  •  Formulation of a protocol and achievement of a photon entanglemen experiment for Quantum Physics Practical Work


Oct. 2012 - Jan. 2017:  PhD Degree in Physics at Université Pierre et Marie Curie, Paris, France (Ranked 63th best university by the CWUR). Doctoral School: Physics and Chemistry of the Materials. Ferroelectric field-effects in high-Tc superconducting devices Defended on January 23th, 2017

2011-2012 Master Degree in Engineering Innovative Technologies – Speciality: Advanced Technologies in Materials and Structures at Ecole Polytechnique, Palaiseau, France (Ranked 36th best university by the CWUR).

2008-2011 Student at ESPCI ParisTech, a French “Grande Ecole” graduate engineering school on physics and chemistry. Engineer diploma, speciality: Physics.

2006-2008 Student in Physics and Chemistry at Classes Préparatoires Stanislas, a French program consisiting of two intensive years training for enrolment in one of the “Grandes Ecoles”





2021:   Talk:      Non-Volatile Memories Workshop, San Diego (USA)

2021:   Talk:      IEEE Electron Devices Technology and Manufacturing, Chengdu (China), nominated for the Best Paper Award

2021: Invited Talk: Mesa + Inorganic Materials and Science Colloquium, Enschede (The Netherlands)

2019:   Talk:      European Materials Research Meeting, Warsaw (Poland)

2018:   Poster: COST TO-BE “Tow. Oxide-Based Electronics”, St-Felíu de Guíxols (Catalunya)

2017:   Poster: 4TU Smart Materials Summer School, Ameland (The Netherlands)

2016:   Poster:  Doctoriales du DIM Oxymore, Paris (France)

2015:   Talk:      American Physical Society March Meeting, San Antonio, Texas US

2014:   Talk:      Doctoriales du DIM Oxymore, Paris (France),

“Prix des Auditions” Award

2013:   Poster: International School of Oxides Electronics, Cargèse (France)

2013:  Talk:    MAMA Trends, Sorrento (Italy)



Ferroelectric, Analog Resistive Switching in BEOL Compatible TiN/HfZrO4/TiOx Junctions

L Bégon-Lours, M Halter, Y Popoff, BJ Offrein

physica status solidi (RRL)–Rapid Research Letters



Reliability aspects of ferroelectric TiN/Hf0.5Zr0.5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition

C Zacharaki, P Tsipas, S Chaitoglou, L Bégon-Lours, M Halter, ...

Applied Physics Letters 117 (21), 212905




Stabilization of phase-pure rhombohedral pulsed laser deposited thin films

L Bégon-Lours, M Mulder, P Nukala, S De Graaf, YA Birkhölzer, B Kooi, ...

Physical Review Materials 4 (4), 043401



Back-end, CMOS-compatible ferroelectric field-effect transistor for synaptic weights

M Halter, L Bégon-Lours, V Bragaglia, M Sousa, BJ Offrein, S Abel, ...

ACS applied materials & interfaces 12 (15), 17725-17732



Mechanisms for polarization fatigue in ferroelectric epitaxial film

MT Do, EP Houwman, N Gauquelin, DM Nguyen, J Wang, ...

MESA+ Meeting 2019



Factors limiting ferroelectric field-effect doping in complex oxide heterostructures

L Bégon-Lours, V Rouco, Q Qiao, A Sander, MA Roldán, R Bernard, ...

Physical Review Materials 2 (8), 084405



Size of ferroelectric field effects in oxide heterostructures

J Villegas, L Begon-Lours, V Rouco, A Sander, J Trastoy, K Bouzehouane, ...

APS March Meeting Abstracts 2018, S09. 004



Atomic Resolution STEM-EELS Studies of Defects and Local Structural Distortions in Oxide Interfaces

G Sánchez-Santolino, MA Roldan, Q Qiao, L Begon-Lours, MA Frechero, ...

Microscopy and Microanalysis 23 (S1), 372-373



High-Temperature-Superconducting Weak Link Defined by the Ferroelectric Field Effect

L Bégon-Lours, V Rouco, A Sander, J Trastoy, R Bernard, E Jacquet, ...

Physical Review Applied 7 (6), 064015



Electroresistance in superconductor-ferroelectric-superconductor junctions

V Rouco, A Sander, L Begon-Lours, S Collin, S Fusil, J Santamaria, ...

APS March Meeting Abstracts 2017, S41. 010



Ferroelectric Field-Effects in High-Tc Superconducting Devices

L Bégon-Lours

Université Pierre & Marie Curie-Paris 6



Polarization dependence of the tunnel current in superconductor-ferroelectric-superconductor junctions

A Sander, V Rouco, L Begon-Lours, S Collin, S Fusil, J Santamaria, ...

Verhandlungen der Deutschen Physikalischen Gesellschaft



Vertical Transport in Ferroelectric/Superconductor Heterostructures

L Begon-Lours, J Trastoy, R Bernard, E Jacquet, C Carretero, ...

APS March Meeting Abstracts 2015, A23. 001



Ferroelectric control of a Mott insulator

H Yamada, M Marinova, P Altuntas, A Crassous, L Bégon-Lours, S Fusil, ...

Scientific reports 3 (1), 1-6



A non-linear model of sensitivity matrix for electrical capacitance tomography

G Villares, L Begon-Lours, C Margo, Y Oussar, J Lucas, S Holé

2012 Annual Meeting of the Electrostatics Society of America, 00-00




+1 article in preparation and two proceedings to be published



Photosensitive Josephson Junctions, France n° 16 00816, June 2016

Method for the Automated Probing of Three-Terminal Devices in a Crossbar Array in Back End of Line, IPCOM000265387D, April 2021.

+ 1 disclosure submitted with IBM to be filed