High-Speed Silicon-Germanium Electronics     

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High-Speed Silicon-Germanium Electronics - overview


Physics Accomplishment | 1994

IBM researcher: Bernard S. Meyerson

Where the work was done: IBM T.J. Watson Research Center

What we accomplished: Meyerson (pictured) and his IBM team created electronic devices that outperform traditional silicon technology yet remain compatible with standard manufacturing methods.

Related links: Si/SiGe Epitaxial-Base Transistors (Part I): Materials, Physics and Circuits (IEEE Electron Devices, March 1995.

Silicon-Germanium Heterojunction Bipolar Transistors: From Experiment to Technology, International Journal of High Speed Electronics and Systems, September 1994.

Extremely High Electron Mobility in Si/SiGe Modulation-Doped Heterostructures, Applied Physics Letters, December 1994.

UHVCVD Growth of Si/SiGe Heterostructures and Their Applications, Semiconductor Science and Technology, September 1994.

Image credit: IBM

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