Atomic Layer Etching       

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Robert L. Bruce photo photoERIC A. JOSEPH photo Nathan Marchack photo Hiroyuki  (Hiro) Miyazoe photo photo Hongwen  (Wendy) Yan photo

Atomic Layer Etching Publications



2018

Nitride etching with hydrofluorocarbons. II. Evaluation of C4H9F for tight pitch Si3N4 patterning applications
Nathan Marchack, Hiroyuki Miyazoe, Robert L. Bruce, Hsinyu Tsai, Masahiro Nakamura, Takefumi Suzuki, Azumi Ito, Hirokazu Matsumoto, Sebastian U. Engelmann, Eric A. Joseph
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36(3), 031801, 2018

Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-k′ nitride spacer etch processes
Miyazoe, Hiroyuki and Marchack, Nathan and Bruce, Robert L and Zhu, Yu and Nakamura, Masahiro and Miller, Eric and Kanakasabapathy, Sivananda and Suzuki, Takefumi and Ito, Azumi and Matsumoto, Hirokazu and others
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36(3), 032201, AVS, 2018
Abstract


2017

Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
Metzler, Dominik and Li, Chen and Engelmann, Sebastian and Bruce, Robert L and Joseph, Eric A and Oehrlein, Gottlieb S
The Journal of Chemical Physics 146(5), 052801, AIP Publishing, 2017

Cyclic Cl2/H2 quasi-atomic layer etching approach for TiN and TaN patterning using organic masks
Nathan Marchack, John M. Papalia, Sebastian Engelmann, Eric A. Joseph
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35(5), 05C314, 2017

Electron beam generated plasmas: Characteristics and etching of silicon nitride
Walton, SG and Boris, DR and Hern{'a}ndez, SC and Lock, EH and Petrova, Tz B and Petrov, GM and Jagtiani, AV and Engelmann, SU and Miyazoe, H and Joseph, EA
Microelectronic Engineering168, 89--96, Elsevier, 2017
Abstract

Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
Metzler, Dominik and Li, Chen and Engelmann, Sebastian and Bruce, Robert L and Joseph, Eric A and Oehrlein, Gottlieb S
The Journal of Chemical Physics 146(5), 052801, AIP Publishing, 2017
Abstract

Reducing LER in Si and SiN through plasma etch chemistry optimization for photonic waveguide applications
Nathan Marchack, Marwan Khater, Jason Orcutt, Josephine Chang, Steven Holmes, Tymon Barwicz, Swetha Kamlapurkar, William Green, Sebastian Engelmann
Proc. SPIE10149, 101490F-101490F-10, 2017
Abstract

Directed self-assembly patterning strategies for phase change memory applications
Bruce, Robert L and Fraczak, Gloria and Papalia, John M and Tsai, HsinYu and BrightSky, Matt and Miyazoe, Hiroyuki and Zhu, Yu and Engelmann, Sebastian U and Lung, Hsiang-Lan and Masuda, Takeshi and others
SPIE Advanced Lithography, pp. 101490J--101490J, 2017
Abstract

Highly selective dry etching of polystyrene-poly (methyl methacrylate) block copolymer by gas pulsing carbon monoxide-based plasmas
Miyazoe, Hiroyuki and Jagtiani, Ashish V and Tsai, Hsin-Yu and Engelmann, Sebastian U and Joseph, Eric A
Journal of Physics D: Applied Physics 50(20), 204001, IOP Publishing, 2017

Electron beam generated plasmas: Characteristics and etching of silicon nitride
Walton, SG and Boris, DR and Hern{\'a}ndez, SC and Lock, EH and Petrova, Tz B and Petrov, GM and Jagtiani, AV and Engelmann, SU and Miyazoe, H and Joseph, EA
Microelectronic Engineering168, 89--96, Elsevier, 2017
Abstract

Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymer
Engelmann, Sebastian U and Bruce, Robert L and Joseph, Eric A and Fuller, Nicholas CM and Graham, William S and Sikorski, Edmund M and Kohjasteh, Mahmoud and Zhu, Yu and Nakamura, Masahiro and Ito, Azumi and others
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35(5), 051803, AVS, 2017
Abstract

Cyclic Cl2/H2 quasi-atomic layer etching approach for TiN and TaN patterning using organic masks
Nathan Marchack, John M. Papalia, Sebastian Engelmann, and Eric A. Joseph
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films35, 05C314 , 2017
Abstract

Etching with Low Te Plasmas
Walton, Scott G and Boris, David R and Hernandez, Sandra Catalina and Rosenberg, Samantha G and Miyazoe, Hiroyuki and Jagtiani, Ashish V and Engelmann, Sebastian U and Joseph, Eric A
Meeting Abstracts, pp. 1085--1085, 2017
Abstract


2016

Applications for Surface Engineering Using Atomic Layer Etching-Invited Paper
John Papalia, Nathan Marchack, Robert Bruce, Hiroyuki Miyazoe, Sebastian Engelmann, Eric A Joseph
Solid State Phenomena, pp. 41--48, 2016

Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4
Li, Chen and Metzler, Dominik and Lai, Chiukin Steven and Hudson, Eric A and Oehrlein, Gottlieb S
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34(4), 041307, AVS, 2016

Evaluation of ALE processes for patterning
Papalia, JM and Marchack, N and Bruce, RL and Miyazoe, H and Engelmann, SU and Joseph, EA
SPIE Advanced Lithography, pp. 97820H--97820H, 2016

Evaluation of ALE processes for patterning
J. M. Papalia ; N. Marchack ; R. L. Bruce ; H. Miyazoe ; S. U. Engelmann ; E. A. Joseph
Advanced Etch Technology for Nanopatterning V, 2016

Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
Ashish V Jagtiani, Hiroyuki Miyazoe, Josephine Chang, Damon B Farmer, Michael Engel, Deborah Neumayer, Shu-Jen Han, Sebastian U Engelmann, David R Boris, Sandra C Hernandez and others
Journal of Vacuum Science & Technology A 34(1), 01B103, AVS: Science & Technology of Materials, Interfaces, and Processing, 2016

Application of cyclic fluorocarbon/argon discharges to device patterning
Dominik Metzler, Kishore Uppireddi, Robert L Bruce, Hiroyuki Miyazoe, Yu Zhu, William Price, Ed S Sikorski, Chen Li, Sebastian U Engelmann, Eric A Joseph and others
Journal of Vacuum Science & Technology A 34(1), 01B102, AVS: Science & Technology of Materials, Interfaces, and Processing, 2016

Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
Dominik Metzler, Chen Li, Sebastian Engelmann, Robert L Bruce, Eric A Joseph, Gottlieb S Oehrlein,
Journal of Vacuum Science & Technology A 34(1), 01B101, AVS: Science & Technology of Materials, Interfaces, and Processing, 2016

Application of cyclic fluorocarbon/argon discharges to device patterning
Metzler, Dominik and Uppireddi, Kishore and Bruce, Robert L and Miyazoe, Hiroyuki and Zhu, Yu and Price, William and Sikorski, Ed S and Li, Chen and Engelmann, Sebastian U and Joseph, Eric A and others
Journal of Vacuum Science & Technology A 34(1), 01B102, AVS: Science & Technology of Materials, Interfaces, and Processing, 2016
Abstract

Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
Metzler, Dominik and Li, Chen and Engelmann, Sebastian and Bruce, Robert L and Joseph, Eric A and Oehrlein, Gottlieb S
Journal of Vacuum Science & Technology A 34(1), 01B101, AVS: Science & Technology of Materials, Interfaces, and Processing, 2016
Abstract

Applications for Surface Engineering Using Atomic Layer Etching-Invited Paper
Papalia, John and Marchack, Nathan and Bruce, Robert and Miyazoe, Hiroyuki and Engelmann, Sebastian and Joseph, Eric A
Solid State Phenomena, pp. 41--48, 2016

Evaluation of ALE processes for patterning
Papalia, JM and Marchack, N and Bruce, RL and Miyazoe, H and Engelmann, SU and Joseph, EA
SPIE Advanced Lithography, pp. 97820H--97820H, 2016


2015

Challenges of Tailoring Surface Chemistry and Plasma/Surface Interactions to Advance Atomic Layer Etching
S. U. Engelmann, R. L. Bruce, M. Nakamura, D. Metzler, S. G. Walton, E. A. Joseph
Ecs Journal of Solid State Science and Technology 4(6), N5054-N5060, 2015


2014

Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
Dominik Metzler, Robert L. Bruce, Sebastian Engelmann, Eric A. Joseph, Gottlieb S. Oehrlein
Journal of Vacuum Science & Technology a 32(2), 2014


2011

Perspectives in nanoscale plasma etching: what are the ultimate limits?
Nathan Marchack, Jane P Chang
Journal of Physics D: Applied Physics 44(17), 174011, 2011
Abstract