Atomic Layer Etching - Methods
Challenges of Tailoring Surface Chemistry and Plasma/Surface Interactions to Advance Atomic Layer EtchingS. U. Engelmann, R. L. Bruce, M. Nakamura, D. Metzler, S. G. Walton, E. A. Joseph
Ecs Journal of Solid State Science and Technology 4(6), N5054-N5060, 2015
One of the most important things to note is that only a small window exsists for any process to achieve atomic scale precision.
A schematic, mostly geared towards the flux control approach can be seen here:
It should be noted, that of course E0 is a function of the plasma system that is being used, whereas ES is a function of the material to be etched. Based on the plasma/material system chosen, the range of these can differ greatly.