Hasan M Nayfeh  Hasan M Nayfeh photo         

contact information

IBM Q- Quantum Computing Systems Research & Development
Thomas J. Watson Research Center, Yorktown Heights, NY USA
  

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Professional Associations

Professional Associations:  IEEE Electron Devices Society (EDS)


2014

Butted SOI junction isolation structures and devices and method of fabrication
Johnson, Jeffrey B and Narasimha, Shreesh and Nayfeh, Hasan M and Ontalus, Viorel and Robison, Robert R
US Patent 8,741,725
Abstract


2013

Structure and method for manufacturing asymmetric devices
Nayfeh, Hasan M and Bryant, Andres and Kumar, Arvind and Rovedo, Nivo and Robison, Robert
US Patent 8,482,075
Abstract


2011

REPLACEMENT METAL GATE STRUCTURE AND METHODS OF MANUFACTURE
Sameer H Jain, Jeffrey B. Johnson, Ying Li, Hasan M. Nayfeh, Ravikumar Ramachandran
trench, metal gate, metal, materials science, electronic engineering, dielectric, composite material
Abstract


2009

Method of creating asymmetric field-effect-transistors
Gregory G. Freeman, Shreesh Narasimha, Ning Su, Hasan M. Nayfeh, Nivo Rovedo, Werner A. Rausch, Jian Yu
transistor, substrate, second source, halo, field effect transistor, engineering, electronic engineering
Abstract


2007

Semiconductor structure and method of making same
Xiaomeng Chen, Shwu-Jen Jeng, Byeong Y. Kim, Hasan M. Nayfeh
undercut, semiconductor, metal gate, materials science, gate oxide, electronic engineering
Abstract

Method of making a semiconductor structure
Xiaomeng Chen, Shwu-Jen Jeng, Byeong Y. Kim, Hasan M. Nayfeh
undercut, semiconductor, metal gate, materials science, gate oxide, electronic engineering
Abstract


2006

Semiconductor structure having undercut-gate-oxide gate stack enclosed by protective barrier material
Xiaomeng Chen, Shwu-Jen Jeng, Byeong Y. Kim, Hasan M. Nayfeh
undercut, semiconductor, metal gate, materials science, gate oxide, electronic engineering
Abstract

STRESS LINER SURROUNDED FACETLESS EMBEDDED STRESSOR MOSFET
Byeong Y. Kim, Shahid A. Butt, Xiaomeng Chen, Shwu-Jen J. Jeng, Hasan M. Nayfeh, Deepal Wehella-Gamage
transistor, substrate, structural engineering, stressor, silicon nitride, materials science, mosfet, facet, etching, epitaxy, composite material
Abstract

METAL GATE MOSFET BY FULL SEMICONDUCTOR METAL ALLOY CONVERSION
Hasan M. Nayfeh, Mahender Kumar, Sunfei Fang, Jakub T Kedzierski, Cyril Cabral
semiconductor, metal gate, metal, materials science, mosfet, gate oxide, electronic engineering, alloy
Abstract


2005

STRUCTURE AND METHOD FOR REDUCING MILLER CAPACITANCE IN FIELD EFFECT TRANSISTORS
Hasan M. Nayfeh, Andrew Waite
wafer, semiconductor, materials science, insulator, gate oxide, field effect transistor, epitaxy, electronic engineering, dielectric, and gate
Abstract




Technical Areas