Sophie V. Vandebroek  Sophie V. Vandebroek photo         

contact information

VP Emerging Technology Partnerships
IBM Cambridge Research Lab, MA


Professional Associations

Professional Associations:  Fellow, IEEE  |  Women in Technology International (WITI)

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The Internet of Everything enabling the Democratization of Energy.
Vandebroek, Sophie V
United States Department of Energy, ARPA-e Summit Opening Keynote , 2016

Three pillars enabling the Internet of Everything: Smart everyday objects, information-centric networks, and automated real-time insights
Vandebroek, Sophie V
Solid-State Circuits Conference (ISSCC) Opening Keynote, 2016 IEEE International, pp. 14--20


Micromachining technology for thermal ink-jet products
Verdonckt-Vandebroek, Sophie
Micromachining and Microfabrication, pp. 180--184, 1997

Thermal ink jet technology
Peeters, Eric and Verdonckt-Vandebroek, Sophie
IEEE Circuits and Devices Magazine 13(4), 19--23, IEEE, 1997


SiGe-channel heterojunction p-MOSFET's
Verdonckt-Vandebroek, Sophie and Crabbe, Emmanuel F and Meyerson, Bernard S and Harame, David L and Restle, Phillip J and Stork, Johnannes MC and Johnson, Jeffrey B
IEEE Transactions on Electron Devices 41(1), 90--101, IEEE, 1994


51st Annual Device Research Conference
Asbeck, Peter and Lundstrom, Mark and Clarke, R Chris and Rathman, Dennis and Crabbe, Emmanuel and Rosenberg, James and Harder, Chris and Seabaugh, Alan and Hasegawa, Hideki and Sturm, James and others
IEEE Transactions on Electron Devices 40(11), 1993


Power n-MOSFET design for a 40-V 192-element thermal ink jet IC
Hawkins, WG and Burke, CJ and Watrobski, TE and Tellier, TA and Verdonckt-Vandebroek, S and Chow, TP
IEEE Transactions on Electron Devices 39(11), 2674, IEEE, 1992

High-gain lateral pnp bipolar action in a p-MOSFET structure
Verdonckt-Vandebroek, Sophie and You, Jaehee and Woo, JCS and Wong, SS
IEEE electron device letters 13(6), 312--313, IEEE, 1992

A fully integrated silicon-based 40-V thermal ink jet IC
Hawkins, William G and Burke, Cathie J and Watrobski, Thomas E and Tellier, Thomas A and Verdonckt-Vandebroek, Sophie and Chow, T Paul
Microelectronic Engineering 19(1-4), 165--168, Elsevier, 1992


Design issues for SiGe heterojunction FETs
Verdonckt-Vandebroek, S and Crabbe, EF and Meyerson, BS and Harame, DL and Restle, PJ and Stork, JMC
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in, pp. 425--434

High-gain lateral bipolar action in a MOSFET structure
Verdonckt-Vandebroek, Sophie and Wong, S Simon and Woo, JCS and Ko, Ping K
IEEE Transactions on Electron Devices 38(11), 2487--2496, IEEE, 1991

High-mobility modulation-doped SiGe-channel p-MOSFETs
Verdonckt-Vandebroek, Sophie and Crabbe, Emmanuel F and Meyerson, Bernard S and Harame, David L and Restle, Phillip J and Stork, JMC and Megdanis, Andrew C and Stanis, Carol L and Bright, Arthur A and Kroesen, Gerrit MW and others
IEEE electron device letters 12(8), 447--449, IEEE, 1991


A Complementary high current gain transistor for use in a CMOS compatible technology
Verdonckt-Vandebroek, Sophie and Woo, JCS and Wong, SS
Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990, pp. 82--85