2023
Distributed Vector-Raster Fusion
Conrad M Albrecht, Ildar Khabibrakhmanov, Sharathchandra Pankanti, Levente Klein, Wang Zhou, Bruce Gordon Elmegreen, Siyuan Lu, Hendrik F. Hamann, Carlo Siebenschuh
Patent US11594004
Abstract Feb 28, 2023
In some examples, a method of vector-raster data fusion includes receiving vector data for a geographical location, and statistically analyzing the vector data to obtain vector statistics. In some examples the method further includes rasterizing the vector statistics, and storing at least one of the vector data and the rasterized vector statistics together in a key-value store together with previously stored raster data for the geographic location. In some examples, the vector data further includes metadata, and the method further includes storing the metadata in at least one of the key-value store or a separate vector database.
Feb 28, 2023
2022
Infrasonic detector using a parallel dipole line trap
Bruce Gordon Elmegreen, Oki Gunawan, Wang Zhou
Patent US 11442184
Abstract Sept 13, 2022
Aspects of the invention include arranging two cylindrical magnets with transverse magnetization to be parallel to each other along their longitudinal axis. The two cylindrical magnets have a space between them and are prevented from moving relative to one another. An exemplary method includes disposing a diamagnetic object to levitate above the space between the two cylindrical magnets. A motion detector is arranged to identify relative movement between the two cylindrical magnets and the object, and an infrasound wave is identified based on the relative movement
Sept 13, 2022
Sensor-based communications network for remote and underground locations
Bruce Gordon Elmegreen, Levente Klein, Sufi Zafar
Patent US11483387
Abstract October 25, 2022
Aspects of the invention include using a controller to control a transceiver to transmit a sensor query signal to a first sensor at a first location of one or more locations having one or more sensors, wherein the sensor query signal energizes a first power supply for the first sensor, wherein energizing the power supply causes the first sensor to perform a sensor reading at the first location and transmit to the transceiver an encoded response signal representing the sensor reading, and analyzing, using the controller, the encoded response signal to determine the sensor reading at the first location.
October 25, 2022
2021
Highly sensitive three-dimensional accelerometer based on diamagnetic levitation in a ring magnet
Bruce Elmegreen, Oki Gunawan
Patent US11175305
Abstract
A technique relates to a magnetic device and a diamagnetic material positioned to levitate at a three-dimensional minimum of a potential well generated by a magnetic field of the magnetic device.
2020
Accelerometer using diamagnetic levitation
Elmegreen, B.G., Gunawan, O.K., van Kessel, T.
Patent US10564175
Abstract
An accelerometer without internal mechanical attachments. Three parallel cylindrical magnets are fixed within a housing. Each cylindrical magnet has a long axis extending through the housing and a cylindrical cross-section. The cylindrical cross-sections of the cylindrical magnets are organized to form a triangular formation. The magnetization of the cylindrical magnets is tangential to the triangular formation. A diamagnetic mass object levitates within the three cylindrical magnets by the magnetization of the cylindrical magnets at an equilibrium position near the center of the triangular formation and near a central axis of the three parallel cylindrical magnets when no external force is applied. Sensors detect the location of the diamagnetic mass object when the diamagnetic mass object is displaced from the equilibrium position near the center of the triangular formation and the three parallel cylindrical magnets by an external force to the housing.
Real Time Simulation Monitoring
Biem, A.E., Elmegreen, B.G., Gokmen, T.
Patent US10693736
Abstract
A method for monitoring at least one simulation program includes capturing, by a computer, a plurality of simulation data from the at least one simulation program, the capturing is performed in real time while the at least one simulation program is continuously streaming the plurality of simulation data, analyzing, by the computer, the captured plurality of simulation data using a streaming data software, identifying a plurality of predefined criteria within the analyzed plurality of simulation data, the plurality of predefined criteria includes at least one of an event, a result and a variable, and providing feedback to the at least one simulation program to modify a plurality of simulation parameters according to the at least one identified event, result and variable.
2019
Combined chemical and velocity sensors for fluid contamination analysis
Elmegreen, B.G.
Patent US10502862
Abstract
Methods and systems for locating a chemical source include measuring chemical concentration with sensors at a plurality of different positions. Measurements from pairs of positions are cross-correlated to determine an average velocity vector for a group of positions. A convergence region is determined based on a plurality of average velocity vectors to determine a chemical source location.
2018
Electromagnetic trap cooling system with parallel dipole line trap
Gunawan, O. & Elmegreen, B.G.
Patent US10128013
Abstract
A method, apparatus and system for decreasing random motions of a levitated diamagnetic cylinder is provided. Embodiments of the present invention utilizes a parallel dipole line (PDL) trap system to trap a diamagnetic object. The trap consists of a magnetic parallel dipole line system made of a pair of transversely magnetized (or diametric) cylindrical magnets. A diamagnetic object such as graphite rod can be trapped at the center. The system includes a differential photodetector pair, a differential amplifier, a differentiator, a proportional integral differential (PID) feedback controller and electrode voltage drive system. The feedback control system will minimize the speed of the trapped rod thus lowering its effective temperature. The system can be used to minimize intrinsic noise and enhance the precision in various sensing applications using a parallel dipole line trap.
Piezoelectronic Device with Novel Force Amplification
Bruce Elmegreen, Marcelo Kuroda, Xiao Hu Liu, Glenn Martyna, Dennis Newns, Paul Solomon
Patent US9941472
Abstract
A piezoelectronic device with novel force amplification includes a first electrode; a piezoelectric layer disposed on the first electrode; a second electrode disposed on the piezoelectric layer; an insulator disposed on the second electrode; a piezoresistive layer disposed on the insulator; a third electrode disposed on the insulator; a fourth electrode disposed on the insulator; a semi-rigid housing surrounding the layers and the electrodes; wherein the semi-rigid housing is in contact with the first, third, and fourth electrodes and the piezoresistive layer; wherein the semi-rigid housing includes a void. The third and fourth electrodes are on the same plane and separated from each other in the transverse direction by a distance
2016
Piezoelectronic switch device for RF applications
Matthew W. Copel, Bruce G. Elmegreen, Glenn J. Martyna, Dennis M. Newns, Thomas M. Shaw, Paul M. Solomon
Patent US9472368, US9881759, US10354824
Abstract
A piezoelectronic switch device for radio frequency (RF) applications includes a piezoelectric (PE) material layer and a piezoresistive (PR) material layer separated from one another by at least one electrode, wherein an electrical resistance of the PR material layer is dependent upon an applied voltage across the PE material layer by way of an applied pressure to the PR material layer by the PE material layer; and a conductive, high yield material (C-HYM) comprising a housing that surrounds the PE material layer, the PR material layer and the at least one electrode, the C-HYM configured to mechanically transmit a displacement of the PE material layer to the PR material layer such that applied voltage across the PE material layer causes an expansion thereof and an increase the applied pressure to the PR material layer, thereby causing a decrease in the electrical resistance of the PR material layer.
Low voltage transistor and logic devices with multiple, stacked piezoelectronic layers
Bruce G. Elmegreen, Glenn J. Martyna, Dennis M. Newns
Patent US9425381, US9466781, US9590167
Abstract
A piezoelectronic transistor device includes a first piezoelectric (PE) layer, a second PE layer, and a piezoresistive (PR) layer arranged in a stacked configuration, wherein an electrical resistance of the PR layer is dependent upon an applied voltage across the first and second PE layers by an applied pressure to the PR layer by the first and second PE layers. A piezoelectronic logic device includes a first and second piezoelectric transistor (PET), wherein the first and second PE layers of the first PET have a smaller cross sectional area than those of the second PET, such that a voltage drop across the PE layers of the first PET creates a first pressure in the PR layer of the first PET that is smaller than a second pressure in the PR layer of the second PET created by the same voltage drop across the PE layers of the second PET.
Non-Volatile, Piezoelectronic Memory Based on Piezoresistive Strain Produces by Piezoelectric Remanence
Bruce Elmegreen, Glenn Martyna, Dennis Newns, Alejandro Schrott
Patent US9251884, US9679645
Abstract
A nonvolatile memory storage device includes a ferroelectric (FE) material coupled with a piezoresistive (PR) material through an inherent piezoelectric response of the FE material, wherein an electrical resistance of the PR material is dependent on a compressive stress applied thereto, the compressive stress caused by a remanent strain of the FE material resulting from a polarization of the FE material, such that a polarized state of the FE material results in a first resistance value of the PR material, and a depolarized state of the FE material results in a second resistance value of the PR material.
2015
Piezoelectronic memory
Bruce G. Elmegreen, Glenn J. Martyna, Dennis M. Newns, Paul M. Solomon
Patent US 9058868 B2
Abstract
A memory element includes a first piezotronic transistor coupled to a second piezotronic transistor; the first and second piezotronic transistors each comprising a piezoelectric (PE) material and a piezoresistive (PR) material, wherein an electrical resistance of the PR material is dependent upon an applied voltage across the PE material by way of an applied pressure to the PR material by the PE material.
2012
Hardware analog-digital neural networks
Bruce G. Elmegreen, Ralph Linsker, Dennis M. Newns, Bipin Rajendran, Roger D. Traub
Patent US 8275727 B2
Abstract
An analog-digital crosspoint-network includes a plurality of rows and columns, a plurality of synaptic nodes, each synaptic node of the plurality of synaptic nodes disposed at an intersection of a row and column of the plurality of rows and columns, wherein each synaptic node of the plurality of synaptic nodes includes a weight associated therewith, a column controller associated with each column of the plurality of columns, wherein each column controller is disposed to enable a weight change at a synaptic node in communication with said column controller, and a row controller associated with each row of the plurality of rows, wherein each row controller is disposed to control a weight change at a synaptic node in communication with said row controller.
High density low power nanowire phase change material memory device
Bruce G. Elmegreen, Lia Krusin-Elbaum, Dennis M. Newns, Robert L. Sandstrom
Patent US8213224, US8987084
Abstract
A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction.
Piezo-effect transistor device and applications
Bruce G. Elmegreen, Lia Krusin-Elbaum, Glenn J. Martyna, Xiao Hu Liu, Dennis M. Newns
Patent US 8159854 B2
Abstract
A piezo-effect transistor (PET) device includes a piezoelectric (PE) material disposed between first and second electrodes; and a piezoresistive (PR) material disposed between the second electrode and a third electrode, wherein the first electrode comprises a gate terminal, the second electrode comprises a common terminal, and the third electrode comprises an output terminal such that an electrical resistance of the PR material is dependent upon an applied voltage across the PE material by way of an applied pressure to the PR material by the PE material.
Coupling piezoelectric material generated stresses to devices formed in integrated circuits
Bruce G. Elmegreen, Lia Krusin-Elbaum, Glenn J. Martyna, Xiao Hu Liu, Dennis M. Newns, Kuan-Neng Chen
Patent US8247947, US8405279
Abstract
A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.
2010
Piezo-driven non-volatile memory cell with hysteretic resistance
Bruce G. Elmegreen, Lia Krusin-Elbaum, Xiao Hu Liu, Glenn J. Martyna, Martin Muser, Dennis M. Newns
Patent US 7848135 B2
Abstract
A piezoelectrically programmed, non-volatile memory cell structure includes a programmable piezo-resistive hysteretic material (PRHM) that is capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling thereto; a piezoelectric material mechanically coupled to the PRHM such that an applied voltage across the piezoelectric material results in one of a tensile or compressive stress applied to the PRHM, depending upon the polarity of the applied voltage; and one or more electrodes in electrical communication with the PRHM, wherein the one or more electrodes are configured to provide a write programming current path through the piezoelectric material and a read current path through the PRHM.
Multilayer storage class memory using externally heated phase change material
Lia Krusin-Elbaum, Bruce G Elmegreen, Dennis M. Newns, Xinlin Wang
Patent US 7692959 B2
Abstract
A multi-layer, phase change material (PCM) memory apparatus includes a plurality of semiconductor layers sequentially formed over a base substrate, wherein each layer comprises an array of memory cells formed therein, each memory cell further including a PCM element, a first diode serving as a heater diode in thermal proximity to the PCM element and configured to program the PCM element to one of a low resistance crystalline state and a high resistance amorphous state, and a second diode serving a sense diode for a current path used in reading the state of the PCM element; the base substrate further including decoding, programming and sensing circuitry formed therein, with each of the plurality of semiconductor layers spaced by an insulating layer; and intralayer wiring for communication between the base substrate circuitry and the array of memory cells in each of the semiconductor layers.
Phase change material structure and related method
Lawrence A. Clevenger, Bruce G. Elmegreen, Deok-kee Kim, Chandrasekharan Kothandaraman, Lia Krusin-Elbaum, Chung H. Lam, Dennis M. Newns
Patent US 7750335 B2
Abstract
A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).
2009
Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material
Chen, K-N, Elmegreen, B.G., Kim, D.-K., Kothandaraman, C., Krusin-Elbaum, L., Lam, C.H., Newns, D.M., Park, B., Purushothaman, S.
Patent US7633079
Abstract
A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.
Programmable via structure for three dimensional integration technology
Bruce G. Elmegreen, Lia Krusin-Elbaum, Chung Hon Lam, Dennis M. Newns, Matthew R. Wordeman, Albert M. Young
Patent US7545667, US7732798
Abstract
A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof.
2008
Programmable fuse/non-volatile memory structures using externally heated phase change material
Bruce G. Elmegreen, Subramanian S. Iyer, Deok-kee Kim, Lia Krusin-Elbaum, Dennis M. Newns, Byeongju Park
Patent US 7411818 B1
Abstract
A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
Heat-shielded low power PCM-based reprogrammable eFUSE device
James P. Doyle, Bruce G. Elmegreen, Lia Krusin-Elbaum, Chung Hon Lam, Xiao Hu Liu, Dennis M. Newns, Christy S. Tyberg
Patent US7394089, US7491965
Abstract
An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.
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