Conal E. Murray  Conal E. Murray photo         

contact information

Research Staff Member
IBM T.J. Watson Research Center, Yorktown Heights, NY USA
  +1dash914dash945dash2715

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2018

Stress in thin films and coatings: Current status, challenges, and prospects
Abadias, Gr{\'e}gory and Chason, Eric and Keckes, Jozef and Sebastiani, Marco and Thompson, Gregory B and Barthel, Etienne and Doll, Gary L and Murray, Conal E and Stoessel, Chris H and Martinu, Ludvik
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36(2), 020801, AVS, 2018
Abstract

Effects of strain energy on the recrystallization within narrow metallization
Murray, Conal E
Journal of Applied Physics 123(4), 045106, AIP Publishing, 2018
Abstract


2017

The Role of Sample Geometry on Ultra-Low Alpha Particle Emissivity Measurements
Gordon, Michael S and Rodbell, Kenneth P and Murray, Conal E and McNally, Brendan D
IEEE Transactions on Nuclear Science 64(1), 550--558, IEEE, 2017
Abstract

Quantification of local strain distributions in nanoscale strained SiGe FinFET structures
Mochizuki, Shogo and Murray, Conal E and Madan, Anita and Pinto, Teresa and Wang, Yun-Yu and Li, Juntao and Weng, Weihao and Jagannathan, Hemanth and Imai, Yasuhiko and Kimura, Shigeru and others
Journal of Applied Physics 122(13), 135705, AIP Publishing, 2017
Abstract

Analytical determination of participation in superconducting coplanar architectures
Murray, Conal E and Gambetta, Jay M and McClure, Douglas T and Steffen, Matthias
arXiv preprint arXiv:1712.05079, 2017
Abstract


2016

Emerging opportunities in high-energy X-ray science: The diffraction-limited storage ring frontier
Almer, Jon and Chupas, Peter and Stephenson, Brian and Tiede, Dave and Vogt, Stefan and Young, Linda and Evans, Paul and Parise, John and Suter, Bob
2016 - Taylor & Francis, Taylor & Francis
Abstract

Titanium Silicide/Titanium Nitride Full Metal Gates for Dual-Channel Gate-First CMOS
Frank, Martin M and Cabral, Cyril and Dechene, Jessica M and Ortolland, Claude and Zhu, Yu and Marshall, Eric D and Murray, Conal E and Chudzik, Michael P
IEEE Electron Device Letters 37(2), 150--153, IEEE, 2016
Abstract

Tailoring capping layers to reduce stress gradients in copper metallization
Murray, Conal E and Priyadarshini, Deepika and Nguyen, Son and Ryan, E Todd
Applied Physics Letters 109(23), 231907, AIP Publishing, 2016
Abstract

Predicting substrate resonance mode frequency shifts using conductive, through-substrate vias
Murray, Conal E and Abraham, DW
Applied Physics Letters 108(8), 084101, AIP Publishing, 2016
Abstract

Prediction of recrystallization times in electroplated copper thin films
Treger, Mikhail and Witt, Christian and Cabral, Cyril and Murray, Conal and Jordan-Sweet, Jean and Rosenberg, Robert and Eisenbraun, Eric and Noyan, IC
Thin Solid Films615, 107--115, Elsevier, 2016
Abstract

Measurements of radioactive contaminants in semiconductor materials
Gordon, Michael S and Rodbell, Kenneth P and Murray, Conal E and McNally, Brendan D
Semiconductor Science and Technology 31(12), 123003, IOP Publishing, 2016
Abstract

Investigating surface loss effects in superconducting transmon qubits
Gambetta, Jay and Fung, Kent and McClure, D and Dial, Oliver and Shanks, William and Sleight, Jeff and Steffen, Matthias and others
IEEE Transactions on Applied Superconductivity, IEEE, 2016
Abstract


2015

Stress determination through diffraction: establishing the link between Kr{\"o}ner and Voigt/Reuss limits
Murray, Conal E and Jordan-Sweet, Jean L and Bedell, Stephen W and Ryan, E Todd
Powder Diffraction 30(2), 99--103, Cambridge University Press, 2015
Abstract

The Role of Static Charge in Ultra-Low Alpha Particle Emissivity Measurements
Gordon, Michael S and Rodbell, Kenneth P and Murray, Conal E and Sri-Jayantha, Sri M and McNally, Brendan D
IEEE Transactions on Nuclear Science 62(6), 3020--3026, IEEE, 2015
Abstract

Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography
Wang, YY and Cooper, David and Rouviere, J and Murray, CE and Bernier, N and Bruley, J
Applied Physics Letters 106(4), 042104, AIP Publishing, 2015
Abstract

Linking strain anisotropy and plasticity in copper metallization
Murray, Conal E and Jordan-Sweet, Jean and Priyadarshini, Deepika and Nguyen, Son
Applied Physics Letters 106(18), 181902, AIP Publishing, 2015
Abstract


2014

Modeling, and Experimental Measurements, of the SER Critical Charge (Qcrit) in Scaled, SOI, CMOS Devices
Rodbell, Kenneth and Oldiges, Phil and Murray, Conal and Gordon, Michael and Massey, John G and Stawiasz, Kevin and Tang, Henry
Technical Report, IBM TJ Watson Research Center Yorktown Heights United States, 2014
Abstract

Single Event Transients in 32 nm SOI Stacked Latches
Rodbell, Kenneth P and Stawiasz, Kevin G and Gordon, Michael S and Oldiges, Phil and Kim, Keunwoo and Murray, Conal E and Massey, John G and Wissel, Larry and Tang, Henry HK
IEEE Trans. on Nucl. Sci., 2014

Origin of stress gradients induced in capped, copper metallization
Murray, Conal E
Applied Physics Letters 104(8), 081920, AIP, 2014
Abstract

Strain imaging of nanoscale semiconductor heterostructures with X-ray Bragg projection ptychography
Holt, Martin V and Hruszkewycz, Stephan O and Murray, Conal E and Holt, Judson R and Paskiewicz, Deborah M and Fuoss, Paul H
Physical review letters 112(16), 165502, APS, 2014
Abstract


2013

A next-generation in-situ nanoprobe beamline for the Advanced Photon Source
Maser, J{\"o}rg and Lai, Barry and Buonassisi, Tonio and Cai, Zhonghou and Chen, Si and Finney, Lydia and Gleber, Sophie-Charlotte and Harder, Ross and Jacobsen, Chris and Liu, Wenjun and others
X-Ray Nanoimaging: Instruments and Methods, pp. 885106, 2013
Abstract

Probing strain at the nanoscale with X-ray diffraction in microelectronic materials induced by stressor elements
Murray, Conal E and Polvino, SM and Noyan, IC and Cai, Z and Maser, J and Holt, M
Thin Solid Films530, 85--90, Elsevier, 2013
Abstract

Weighted mechanical models for residual stress determination using x-ray diffraction
Murray, Conal E and Bedell, Stephen W and Ryan, E Todd
Journal of Applied Physics 114(3), 033518, AIP, 2013
Abstract

Applied and Residual Stress Determination Using X-ray Diffraction
Murray, Conal E and Cevdet Noyan, I
Practical Residual Stress Measurement Methods, 139--161, Wiley Online Library, 2013
Abstract

Characterization of room temperature recrystallization kinetics in electroplated copper thin films with concurrent x-ray diffraction and electrical resistivity measurements
Treger, Mikhail and Witt, Christian and Cabral, Cyril and Murray, Conal and Jordan-Sweet, Jean and Rosenberg, Robert and Eisenbraun, Eric and Noyan, IC
Journal of Applied Physics 113(21), 214904, AIP, 2013
Abstract

Evolution of strain energy during recrystallization of plated Cu films
Murray, Conal E and Rosenberg, R and Witt, C and Treger, M and Noyan, IC
Journal of Applied Physics 113(20), 203515, AIP, 2013
Abstract

Equivalence of Kr{\"o}ner and weighted Voigt-Reuss models for x-ray stress determination
Murray, Conal E
Journal of Applied Physics 113(15), 153509, AIP, 2013
Abstract

Observation of semiconductor device channel strain using in-line high resolution X-ray diffraction
Holt, Judson R and Madan, Anita and Harley, Eric CT and Stoker, Matt W and Pinto, Teresa and Schepis, Dominic J and Adam, Thomas N and Murray, Conal E and Bedell, Stephen W and Holt, Martin
Journal of Applied Physics 114(15), 154502, AIP, 2013
Abstract

Submicron mapping of strain distributions induced by three-dimensional through-silicon via features
Murray, Conal E and Graves-Abe, T and Robison, R and Cai, Z
Applied Physics Letters 102(25), 251910, AIP, 2013
Abstract


2012

Stress Determination in Semiconductor Nanostructures Using X-Ray Diffraction
Murray, Conal E and Noyan, I Cevdet
Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization (In 2 Volumes). Edited by Haight Richard A et al. Published by World Scientific Publishing Co. Pte. Ltd., 2012. ISBN# 9789814322843, pp. 281-312, 281--312
Abstract

Quantitative nanoscale imaging of lattice distortions in epitaxial semiconductor heterostructures using nanofocused X-ray Bragg projection ptychography
Hruszkewycz, SO and Holt, MV and Murray, CE and Bruley, J and Holt, J and Tripathi, A and Shpyrko, OG and McNulty, I and Highland, MJ and Fuoss, PH
Nano letters 12(10), 5148--5154, ACS Publications, 2012
Abstract

Understanding stress gradients in microelectronic metallization
Murray, Conal E and Ryan, E Todd and Besser, Paul R and Witt, Christian and Jordan-Sweet, Jean L and Toney, Michael F
Powder Diffraction 27(2), 92--98, Cambridge University Press, 2012
Abstract

Mitigating residual stress in Cu metallization
Murray, Conal E and Jordan-Sweet, Jean and Todd Ryan, E and Toney, Michael F
Applied Physics Letters 101(23), 231906, AIP, 2012
Abstract

Silicide-phase evolution and platinum redistribution during silicidation of Ni0. 95Pt0. 05/Si (100) specimens
Adusumilli, Praneet and Seidman, David N and Murray, Conal E
Journal of Applied Physics 112(6), 064307, AIP, 2012
Abstract


2011

Manipulating stress in Cu
MURRAY, Conal E and BESSER, Paul R and RYAN, E Todd and JORDAN-SWEET, Jean L
Applied physics letters 98(14), American Institute of Physics, 2011

32 and 45 nm Radiation-Hardened-By-Design (RHBD) SOI Latches.
Schwank, James R and Rodbell, Kenneth P and Heidel, David F and Pellish, Jonathan A and Marshall, Paul W and Tang, Henry HK and Murray, Conal E and LaBel, Kenneth A and Gordon, Michael S and Stawiasz, Kevin G and others
Technical Report, Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States), 2011
Abstract

Additional information on J. Appl. Phys.
Murray, Conal E and Zhang, Zhen and Lavoie, Christian
J. Appl. Phys110, 099903, 2011
Abstract

Probing Strained Semiconductor Structures with Nanoscale X-ray Diffraction
Murray, Conal E
Engineering Applications of Residual Stress, Volume 8, pp. 35--37, Springer, 2011
Abstract

Manipulating stress in Cu/low-k dielectric nanocomposites
Murray, Conal E and Besser, Paul R and Ryan, E Todd and Jordan-Sweet, Jean L
Applied Physics Letters 98(14), 141916, AIP, 2011
Abstract

Invariant x-ray elastic constants and their use in determining hydrostatic stress
Murray, Conal E
Journal of Applied Physics 110(12), 123501, AIP, 2011
Abstract

Devices, materials, and processes for nanoelectronics: characterization with advanced x-ray techniques using lab-based and synchrotron radiation sources
Zschech, Ehrenfried and Wyon, Christophe and Murray, Conal E and Schneider, Gerd
Advanced Engineering Materials 13(8), 811--836, Wiley Online Library, 2011
Abstract

Triaxial stress distributions in Cu/low-k interconnect features
Murray, Conal E and Besser, Paul R and Ryan, E Todd and Jordan-Sweet, Jean L
Applied Physics Letters 98(6), 061908, AIP, 2011
Abstract

Nanoscale silicon-on-insulator deformation induced by stressed liner structures
Murray, Conal E and Ying, A and Polvino, SM and Noyan, IC and Holt, M and Maser, J
Journal of Applied Physics 109(8), 083543, AIP, 2011
Abstract

32 and 45 nm radiation-hardened-by-design (RHBD) SOI latches
Rodbell, Kenneth P and Heidel, David F and Pellish, Jonathan A and Marshall, Paul W and Tang, Henry HK and Murray, Conal E and LaBel, Kenneth A and Gordon, Michael S and Stawiasz, Kevin G and Schwank, James R and others
IEEE Transactions on Nuclear Science 58(6), 2702--2710, IEEE, 2011
Abstract


2010

Stress gradients observed in Cu thin films induced by capping layers
Murray, Conal E and Besser, Paul R and Witt, Christian and Jordan-Sweet, Jean L
Journal of Materials Research 25(4), 622--628, Cambridge University Press, 2010
Abstract

Alpha-particle emission energy spectra from materials used for solder bumps
Gordon, Michael S and Rodbell, Kenneth P and Heidel, David F and Murray, Conal E and Tang, Henry HK and Dwyer-McNally, Brendan and Warburton, William K
IEEE Transactions on Nuclear Science 57(6), 3251--3256, IEEE, 2010
Abstract

Exploitation of a self-limiting process for reproducible formation of ultrathin Ni 1- x Pt x silicide films
Z Zhang, B Yang, Y Zhu, S Gaudet, S Rossnagel, AJ Kellock, A Ozcan, C Murray, P Desjardins, S-L Zhang, J Jordan-Sweet, C. Lavoie
Applied Physics Letters 97(25), 252108, 2010

Heteroepitaxial silicon film growth at 600 C from an Al--Si eutectic melt
Chaudhari, P and Shim, Heejae and Wacaser, Brent A and Reuter, Mark C and Murray, Conal and Reuter, Kathleen B and Jordan-Sweet, Jean and Ross, Frances M and Guha, Supratik
Thin Solid Films 518(19), 5368--5371, Elsevier, 2010
Abstract


2009

Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni 0.95 Pt 0.05/Si (100) thin films
Adusumilli, Praneet and Lauhon, Lincoln J and Seidman, David N and Murray, Conal E and Avayu, Ori and Rosenwaks, Yossi
Applied Physics Letters 94(11), 113103, AIP, 2009
Abstract

Method and structure for reducing contact resistance between silicide contact and overlying metallization
C Lavoie, C E Murray, K P Rodbell
US Patent 7,491,643, 2009 - Google Patents, Google Patents
US Patent 7,491,643

Stress determination in nickel monosilicide films using x-ray diffraction
C E Murray, Z Zhang, C Lavoie
Journal of Applied Physics106, 073521, 2009

Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni 0.95 Pt 0.05/Si „100… thin films
P Adusumilli, L J Lauhon, D N Seidman, C E Murray, O Avayu, Y Rosenwaks
Applied Physics Letters94, 113103, 2009

Tomographic study of atomic-scale redistribution of platinum during the silicidation of NiPt/Si (100) thin films
P Adusumilli, L J Lauhon, D N Seidman, C E Murray, O Avayu, Y Rosenwaks
Applied Physics Letters94, 113103, 2009


A rigorous comparison of X-ray diffraction thickness measurement techniques using silicon-on-insulator thin films
AJ Ying, CE Murray, IC Noyan
Journal of Applied Crystallography 42(3), International Union of Crystallography, 2009


Three-Dimensional Atom-Probe Tomographic Studies of Nickel Monosilicide/Silicon Interfaces on a Subnanometer Scale
P Adusumilli, C E Murray, L J Lauhon, O Avayu, Y Rosenwaks, D N Seidman
2009 - 129.105.37.34

INTERCONNECT STRUCTURE AND METHOD FOR CU/ULTRA LOW K INTEGRATION
C MURRAY, C C YANG
WO Patent WO/2009/098,151, 2009 - wipo.int
WO Patent WO/2009/098,151

REDUNDANCY DESIGN WITH ELECTRO-MIGRATION IMMUNITY AND METHOD OF MANUFACTURE
L L Hsu, C E Murray, P Wang, C Yang
2009 - freepatentsonline.com



2008

Extendibility of NiPt silicide to the 22-nm node CMOS technology
Kazuya Ohuchi, Christian Lavoie, Conal E Murray, Chris P D'Emic, Isaac Lauer, Jack O Chu, Bin Yang, Paul Besser, Lynne M Gignac, John Bruley, others
Junction Technology, 2008. IWJT'08. Extended Abstracts-2008 8th International workshop on, pp. 150--153

Structure for determining thermal cycle reliability
R G Filippi, J P Gill, V J McGahay, P S McLaughlin, C E Murray, H S Rathore, T M Shaw, P C Wang, others
US Patent ..., 2008 - Google Patents, Google Patents
US Patent 7,388,224

Material and Integration Issues for Rare Earth Silicides as Gate and Diffusion Contacts in Advanced CMOS Technologies
PD Christopher, K Ohuchi, C Murray, C Lavoie, C Scerbo, R Carruthers, P R Besser, B Yang
2008 - link.aip.org

Silicides for 22nm and Beyond
P R Besser, C Lavoie, C Murray, PD Christopher, K Ohuchi
2008 - link.aip.org

Local strain distributions in silicon-on-insulator/stressor-film composites
{\"O} Kalenci, C E Murray, IC Noyan
Journal of Applied Physics104, 063503, 2008

Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures
C E Murray, KL Saenger, O Kalenci, SM Polvino, IC Noyan, B Lai, Z Cai
Journal of Applied Physics104, 013530, 2008

Structure for optimizing fill in semiconductor features deposited by electroplating
C E Murray, P M Vereecken
US Patent 7,446,040, 2008 - Google Patents, Google Patents
US Patent 7,446,040


Real-space strain mapping of SOI features using microbeam X-ray diffraction
C E Murray, SM Polvino, IC Noyan, B Lai, Z Cai
Powder Diffraction 23(2), 106--108, [Swarthmore, Pa.: JCPDS-International Centre for Diffraction Data 1986-, 2008

Mechanical behavior of stressed films on anisotropic substrates
C E Murray, KL Saenger
Journal of Applied Physics104, 103509, 2008

Building metal pillars in a chip for structure support
H Hichri, X H Liu, V J McGahay, C E Murray, J P Nayak, T M Shaw
US Patent ..., 2008 - Google Patents, Google Patents
US Patent 7,456,098

Silicides for 32nm and beyond
P Besser, C Murray, C Lavoie
2008 - electrochem.org

Effects of patterned, stressed SiN overlayers on Si solid phase epitaxy
KL Saenger, KE Fogel, JA Ott, JP Souza de, CE Murray
Applied Physics Letters92, 124103, 2008

Synchrotron microbeam x-ray radiation damage in semiconductor layers
S M Polvino, C E Murray, {\"O} Kalenci, IC Noyan, B Lai, Z Cai
Applied Physics Letters92, 224105, 2008

Backscattered Electron Imaging in the Scanning Electron Microscope: the Use of Either:(a) High Incident Energy or (b) an Array Detector
LM Gignac, OC Wells, CK Hu, J Bruley, CE Murray, A Frye
Microscopy and Microanalysis 14(S2), 120--121, Cambridge Univ Press, 2008


Stress gradients induced in Cu films by capping layers
C E Murray, P R Besser, C Witt, J L Jordan-Sweet
Applied Physics Letters93, 221901, 2008

New simulation methodology for effects of radiation in semiconductor chip structures
HHK Tang, CE Murray, G Fiorenza, KP Rodbell, MS Gordon, DF Heidel
IBM Journal of Research and Development 52(3), 245--253, IBM Corp., 2008


2007

Ni-Pt silicide formation through Ti mediating layers
P B C L A Ozcan, C M J S K Wong, M G Y Y W Christopher, P J Jordan-Sweet
Microelectronic Engineering 84(11), 万方数据资源系统, 2007

Reprogrammable electrical fuse
L C Hsu, C E Murray, C Narayan, C Yang
US Patent App. 11/928,258, 2007 - Google Patents, Google Patents
US Patent App. 11/928,258


Ni--Pt silicide formation through Ti mediating layers
P Besser, C Lavoie, A Ozcan, C Murray, J Strane, K Wong, M Gribelyuk, Y Y Wang, C Parks, J Jordan-Sweet
Microelectronic Engineering 84(11), 2511--2516, Elsevier, 2007


Submicron mapping of strained silicon-on-insulator features induced
C E Murray, M Sankarapandian, SM Polvino, IC Noyan, B Lai, Z Cai
Applied Physics Letters90, 171919, 2007


Importance of BEOL Modeling in Single Event Effect Analysis
HHK Tang, CE Murray, G Fiorenza, KP Rodbell, MS Gordon
IEEE Transactions on Nuclear Science 54(6 Part 1), 2162--2167, 2007

Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells
K P Rodbell, D F Heidel, H H K Tang, M S Gordon, P Oldiges, C E Murray
IEEE Transactions on Nuclear Science 54(6 Part 1), 2474--2479, 2007


2006

Solution-processed metal chalcogenide films for p-type transistors
Milliron, Delia J and Mitzi, David B and Copel, Matthew and Murray, Conal E
Chemistry of materials 18(3), 587--590, ACS Publications, 2006
Abstract

Method and structure for determining thermal cycle reliability
R G Filippi, J P Gill, V J McGahay, P S McLaughlin, C E Murray, H S Rathore, T M Shaw, P C Wang
US Patent App. 11/ ..., 2006 - Google Patents, Google Patents
US Patent App. 11/502,196

Deflection analysis system and method for circuit design
M S Angyal, G Fiorenza, H Hichri, A Lu, D C McHerron, C E Murray
US Patent App. 11/ ..., 2006 - Google Patents, Google Patents
US Patent App. 11/336,524

Systematic Characterization of Pseudomorphic (110) Intrinsic SiGe Epitaxial Films for Hybrid Orientation Technology With Embedded SiGe Source/Drain
Q Ouyang, A Madan, N Klymko, J Li, R Murphy, H Wildman, R Davis, C Murray, J Holt, S Panda, others
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pp. 13, 2006


Thermal stress evolution in embedded Cu/low-k dielectric composite features
C E Murray, C C Goldsmith, T M Shaw, J P Doyle, IC Noyan
Applied Physics Letters89, 011913, 2006


Effects of BEOL stack on thermal mechanical stress of Cu lines
S H Rhee, C E Murray, P R Besser
Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects Proceedings of Symposium F held at the 2006 MRS Spring Meeting, pp. 317--324


2005

Effects of dielectric roughness on texture of both PVD seed layers and EP copper
K J Kozaczek, CE Murray, KP Rodbell
Diffusion and defect data. Solid state data. Part B, Solid state phenomena105, 391--396, Scitec, 2005

Plenary Lecture-Mechanics of End Effects in Thin Film and Substrate Stress Distributions
CE Murray, IC Noyan
Materials Science Forum, pp. 13--18, 2005

Spatially transient stress effects in thin films by X-ray diffraction
CE Murray, CC Goldsmith, IC Noyan
Powder Diffraction20, 112, 2005

Heat dissipation for heat generating element of semiconductor device and related method
A K Chinthakindi, L A Clevenger, T C Lee, G Matusiewicz, C E Murray, C C Yang
US Patent App. 10/ ..., 2005 - Google Patents, Google Patents
US Patent App. 10/907,873

Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure
C Detavernier, S Gaudet, C Lavoie, C E Murray
US Patent App. 11/ ..., 2005 - Google Patents, Google Patents
US Patent App. 11/173,038

METHOD OF ROOM TEMPERATURE GROWTH OF SIOx ON SILICIDE AS AN ETCH STOP LAYER FOR METAL CONTACT OPEN OF SEMICONDUCTOR DEVICES
Y Y Wang, C Lavoie, K E Mello, C E Murray, M W Oonk
US Patent App. 11/ ..., 2005 - Google Patents, Google Patents
US Patent App. 11/160,699

Mechanics of End Effects in Thin Film and Substrate Stress Distributions
CE Murray, IC Noyan
Materials Science Forum, pp. 13--18, 2005

Stacked via-stud with improved reliability in copper metallurgy
B N Agarwala, C A Barile, H M Dalal, B H Engel, M Lane, E Levine, X H Liu, V McGahay, J F McGrath, C E Murray, others
US Patent App. 11/ ..., 2005 - Google Patents, Google Patents
US Patent App. 11/230,841

High-resolution strain mapping in heteroepitaxial thin-film features
CE Murray, H F Yan, IC Noyan, Z Cai, B Lai
Journal of Applied Physics98, 013504, 2005

Thin-film transistors based on spin-coated chalcogenide semiconductor channels
D B Mitzi, M Copel, C E Murray, L L Kosbar, A Afzali
Thin Film Transistor Technologies (TFTT VII), 189, The Electrochemical Society, 2005


2004

Top-down topography of deeply etched silicon in the scanning electron microscope
O C Wells, C E Murray, J L Rullan, L M Gignac
Review of Scientific Instruments75, 2524, 2004

Apparatus and method for flattening a warped substrate
M F Fayaz, S K Kaldor, C E Murray, I C Noyan, A L Petrosky
US Patent App. 10/ ..., 2004 - Google Patents, Google Patents
US Patent App. 10/929,179


Probing Strain Fields About Thin Film Structures Using X-ray Microdiffraction
CE Murray, IC Noyan, PM Mooney, B Lai, Z Cai
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pp. 289--294, 2004

Strain effects in thin film/Si substrates revealed by X-ray microdiffraction
CE Murray, IC Noyan, B Lai, Z Cai
Powder Diffraction19, 56, 2004

Elastic strain relaxation in free-standing SiGe/Si structures
PM Mooney, GM Cohen, JO Chu, CE Murray
Applied Physics Letters84, 1093, 2004

Finite size effects in stress analysis of interconnect structures
IC Noyan, C E Murray, J S Chey, C C Goldsmith
Applied Physics Letters85, 724, 2004

Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
RG Filippi, JF McGrath, TM Shaw, CE Murray, HS Rathore, PS McLaughlin, V McGahay, L Nicholson, P C Wang, JR Lloyd, others
2004 IEEE International Reliability Physics Symposium Proceedings, 2004, pp. 61--67

High-mobility ultrathin semiconducting films prepared by spin coating
DB Mitzi, LL Kosbar, CE Murray, M Copel, A Afzali
Nature 428(6980), 299--303, Nature Publishing Group, 2004


2003


Mapping of strain fields about thin film structures using x-ray microdiffraction
CE Murray, IC Noyan, PM Mooney, B Lai, Z Cai
Applied Physics Letters83, 4163, 2003

Liner materials for direct electrodeposition of Cu
MW Lane, CE Murray, FR McFeely, PM Vereecken, R Rosenberg
Applied Physics Letters83, 2330, 2003


2002

Finite-size effects in thin-film composites
C E Murray, IC Noyan
Philosophical Magazine A 82(16), 3087--3117, Taylor and Francis Ltd, 2002

Process of forming copper structures
M Lane, FR McFeely, C Murray, R Rosenberg
US Patent App. 10/ ..., 2002 - Google Patents, Google Patents
US Patent App. 10/279,057

Barrier material for copper structures
M Lane, FR McFeely, C Murray, R Rosenberg
US Patent App. 10/ ..., 2002 - Google Patents, Google Patents
US Patent App. 10/132,173

A COMPARISON OF GRAIN SIZE MEASUREMENTS IN AL-CU THIN FILMS: IMAGING VERSES DIFFRACTION TECHNIQUES
L Gignac, CE Murray, KP Rodbell, M Gribelyuk
Microscopy and Microanalysis 8(S02), 672--673, Cambridge Univ Press, 2002


2001

WORKSHOP ON TEXTURE IN ELECTRONIC APPLICATIONS Gaithersburg, MD October 10--11, 2000
Vaudin, Mark D and Kaiser, Debra L
Journal of research of the National Institute of Standards and Technology 106(3), 605, National Institute of Standards and Technology, 2001
Abstract

Texture evolution in Al (Cu) interconnect materials
CE Murray, KP Rodbell
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pp. 6--6, 2001

Texture inheritance in Al (Cu) interconnect materials
CE Murray, KP Rodbell
Journal of Applied Physics89, 2337, 2001


2000

Texture evolution in aluminum-copper thin films.
C E Murray
Ph.D. Thesis, 2000


1999

A modified Voigt method for calculation of the elastic constants of ensembles selected by diffraction methods
C E Murray, IC Noyan
Philosophical Magazine A 79(2), 371--389, Taylor and Francis Ltd, 1999


1998

In situ growth of highly oriented Pb (ZrTi) O thin films by low-temperature metal--organic chemical vapor deposition
G R Bai, I F Tsu, A Wang, CM Foster, CE Murray, VP Dravid
Applied Physics Letters72, 1572, 1998



1995

Analysis of three-dimensional inhomogeneous composite bodies using the boundary integral method
Murray, Conal Eugene and Sipcic, S
Technical Report, University of California, Los Angeles, CA (United States), 1995
Abstract

In-situ study of dynamic structural rearrangements during stress relaxation
AD Westwood, CE Murray, IC Noyan
Advances in X Ray Analysis38, 243--254, New York: Plenum Press, 1960-c1997., 1995


1994

Analysis of three-dimensional, inhomogeneous composite bodies using the boundary integral method
C E Murray
Masters Thesis, 1994


Year Unknown

Silicide challenges for 22nm technologies and beyond
Besser, Paul R and Lavoie, Christian and Murray, Conal and D’Emic, Chris and Ohuchi, Kazuya
researchgate.net, 0
Abstract



Local strain distributions in silicon-on-insulator/stressor-film composites

Journal of Applied Physics, 2009 - ieeexplore.ieee.org

Synchrotron microbeam x-ray radiation damage in semiconductor layers

Applied Physics ..., 2009 - ieeexplore.ieee.org

Finite-size effects in thin-film composites

Philosophical Magazine A, 2002 - Taylor & Francis


Texture evolution in Al (Cu) interconnect materials

MATERIALS RESEARCH SOCIETY ..., 2001 - mrs.org


In situ evolution of stress gradients in Cu films induced by capping layers

Applied Physics ..., 2010 - ieeexplore.ieee.org

A modified Voigt method for calculation of the elastic constants of ensembles selected by diffraction methods

Philosophical Magazine A, 1999 - Taylor & Francis, 0



Mechanical behavior of stressed films on anisotropic substrates

Journal of Applied Physics, 2009 - ieeexplore.ieee.org



Ni-Pt silicide formation through Ti mediating layers

Microelectronic ..., 2007 - Elsevier


Silicides for 32nm and beyond

2008 - electrochem.org



The relationship between the golden section φ and the elastic constants of ensembles selected by diffraction methods

Philosophical Magazine A, 1996 - Taylor & Francis, 0




High mobility solution-deposited chalcogenide films for flexible applications

... , 2005.(VLSI-TSA- ..., 2005 - ieeexplore.ieee.org



Extendibility of NiPt silicide to the 22-nm node CMOS technology

... , 2008. IWJT'08. ..., 2008 - ieeexplore.ieee.org


High-resolution strain mapping in heteroepitaxial thin-film features

Journal of Applied Physics, 2005 - link.aip.org

Effects of BEOL stack on thermal mechanical stress of Cu lines

... , Technology and Reliability of Low-k ..., 2006 - mrs.org



Integration of Direct Plating of Cu Onto a CVD Ru Liner

... Conference 2004(AMC ..., 2005 - csa.com


Mechanics of edge effects in anisotropic thin film/substrate systems

Journal of Applied Physics, 2009 - ieeexplore.ieee.org

Importance of BEOL modeling in single event effect analysis

Nuclear Science, IEEE ... - ieeexplore.ieee.org, 0




MRS Symposium II: Probing Mechanics at Nanoscale Dimensions
A Minor, C Murray, N Tamura, L Friedman
mrs.org, 0