Dallas M. Lea  Dallas M. Lea photo         

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Senior Engineer, Electrical Characterization
Semiconductor Technology Research, Albany, NY


Professional Associations

Professional Associations:  Eta Kappa Nu  |  IEEE   |  Tau Beta Pi

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Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applications
Kothandaraman, Chandrasekharan and Chen, X and Moy, Dan and Lea, D and Rosenblatt, Sami and Khan, Faraz and Leu, Derek and Kirihata, Toshiaki and Ioannou, D and LaRosa, G and others
Reliability Physics Symposium (IRPS), 2015 IEEE International, pp. MY--2


Hardware-corroborated Variability-Aware SRAM Methodology
R Joshi, Rouwaida Kanj, S Butt, Emrah Acar, D Lea, D Sciacca
VLSI Design and 2013 12th International Conference on Embedded Systems (VLSID), 2013 26th International Conference on, pp. 344--349


Chip-level power-performance optimization through thermally-driven across-chip variation (ACV) reduction
Yu, X and Gluschenkov, O and Zamdmer, ND and Deng, J and Goplen, BA and Landis, HS and Logan, LR and Culp, JA and Liang, Y and Cai, M and others
Electron Devices Meeting (IEDM), 2011 IEEE International, pp. 25--3


Yield learning methodology in early technology development
Ouyang, Xu and Riggs, David and Ahsan, Ishtiaq and Patterson, Oliver D and Lea, Dallas M and Ebersman, Benjamin and Hawkins, Katherine V and Miller, Keith and Fox, Stephen and Rice, James
Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI, pp. 333--340


High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
S Narasimha, K Onishi, HM Nayfeh, A Waite, M Weybright, J Johnson, C Fonseca, D Corliss, C Robinson, M Crouse, others
Electron Devices Meeting, 2006, pp. 1--4


SRAM cell design for stability methodology
Wann, Clement and Wong, Robert and Frank, David J and Mann, Randy and Ko, Shang-Bin and Croce, Peter and Lea, Dallas and Hoyniak, Dennis and Lee, Yoo-Mi and Toomey, James and others
VLSI Technology, 2005.(VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on, pp. 21--22


A 0.135 um2 6F2 trench-sidewall vertical device cell for 4 Gb/16 Gb DRAM
Radens, CJ and Gruening, U and Mandelman, JA and Seitz, M and Lea, D and Casarotto, D and Clevenger, L and Nesbit, L and Malik, R and Halle, S and others
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on, pp. 80--81


Use of a Negative Tone Photoresist to Improve Low-Tc Superconducting Tunnel Junction Fabrication Processes
Lea, DM and Huang, HH and Lichtenberger, AW
IEEE Transactions on Applied Superconductivity, 1997


Progress on Characterization with Integrated Test Structures of Dielectric and Superconducting Films for SIS Mixer Circuits
Lea, DM and Lichtenberger, AW
Seventh International Symposium on Space Terahertz Technology, pp. 356-368, 1996


On-wafer resonant structures for penetration depth and specific capacitance measurements of Nb/Al-Al2O3/Nb trilayer films
Lea, DM and Lichtenberger, AW and Kerr, AR and Pan, SK and Bradley, RF
Appl. Supercond. Conf, 1994


Investigation of etching techniques for superconductive Nb/Al-Al2O3/Nb fabrication processes
Lichtenberger, AW and Lea, DM and Lloyd, FL
IEEE transactions on applied superconductivity 3(1), 2191--2196, IEEE, 1993


Progress on Tunerless SIS Mixers for
Kerr, AR and Pan, SK and Lichtenberger, AW and Lea, DM
1992 - library.nrao.edu

Nb/Al-Al2O3/Nb junctions with inductive tuning elements for a very low noise 205-250 GHz heterodyne receiver
Lichtenberger, Arthur W and Lea, Dallas M and Mattauch, Robert J and Lloyd, Frances L
IEEE transactions on microwave theory and techniques 40(5), 816--819, IEEE, 1992

Progress on tunerless SIS mixers for the 200-300 GHz band
Kerr, AR and Pan, SK and Lichtenberger, AW and Lea, DM
IEEE Microwave and Guided Wave Letters 2(11), 454--456, 1992


Nb Based Mixer Elements for Millimeter and Submillimeter Wavelengths
Lichtenberger, AW and Lea, DM and Hicks, AC and Prince, JD and Densing, R and Peterson, D and Deaver, BS
Second International Symposium on Space Terahertz Technology, pp. 439, 1991

Fabrication of micron size Nb/Al-Al2O3/Nb junctions with a trilevel resist liftoff process
Lichtenberger, AW and Lea, DM and Li, C and Lloyd, FL and Feldman, MJ and Mattauch, RJ and Pan, S-K and Kerr, AR
IEEE Transactions on Magnetics 27(2), 3168--3171, IEEE, 1991