Huai Huang 
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S / C Quality / Reliability Eng ProfIBM AI Hardware center, Albany NY +1
5182927478
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More information: Google scholar profile2018
Validity and Application of the TCR Method to MOL contactS
E. Milosevic, V. Kamineni, X. Zhang, H. Dixit, M. V. Raymond, H. Huang, R. Southwick, C. Janicki, N. Lanzillo, D. Gall
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract thermal conduction, sheet resistance, scattering theory, metallurgy, materials science, grain size, grain boundary, film analysis, electrical resistivity and conductivity, condensed matter physics, apparent temperature
E. Milosevic, V. Kamineni, X. Zhang, H. Dixit, M. V. Raymond, H. Huang, R. Southwick, C. Janicki, N. Lanzillo, D. Gall
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract thermal conduction, sheet resistance, scattering theory, metallurgy, materials science, grain size, grain boundary, film analysis, electrical resistivity and conductivity, condensed matter physics, apparent temperature
Modified ALD TaN Barrier with Ru Liner and Dynamic Cu Reflow for 36nm Pitch Interconnect Integration
P. S. Bhosale, J. Maniscalco, N. Lanzillo, T. Nogami, D. Canaperi, K. Motoyama, H. Huang, P. McLaughlin, R. Shaviv, M. Stolfi, R. Vinnakota, G. How, S. Pethe, B. Sheu, X. Xie, L. Chen
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract sputtering, physical vapor deposition, metallurgy, materials science, electromigration, composite material, chemical vapor deposition, atomic layer deposition
P. S. Bhosale, J. Maniscalco, N. Lanzillo, T. Nogami, D. Canaperi, K. Motoyama, H. Huang, P. McLaughlin, R. Shaviv, M. Stolfi, R. Vinnakota, G. How, S. Pethe, B. Sheu, X. Xie, L. Chen
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract sputtering, physical vapor deposition, metallurgy, materials science, electromigration, composite material, chemical vapor deposition, atomic layer deposition
Process Challenges in Fully Aligned Via Integration for sub 32 nm Pitch BEOL
Benjamin D. Briggs, C. B. Pcethala, D. L. Rath, J. Lee, S. Nguyen, N. V. LiCausi, P. S. McLaughlin, H. You, D. Sil, N. A. Lanzillo, H. Huang, R. Patlolla, T. Haigh, Y. Xu, C. Park, P. Kerber, H. K. Shobha, Y. Kim, J. Demarest, J. Li, G. Lian, M. Ali, C. T Le, E. T. Ryan, L. A. Clevenger, D. F. Canaperi, T. E. Standaert, G. Bonilla, E. Huang
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract scaling, materials science, insulator, exponential growth, electronic engineering, electrical resistivity and conductivity, dielectric, chamfer, audio time scale pitch modification
Benjamin D. Briggs, C. B. Pcethala, D. L. Rath, J. Lee, S. Nguyen, N. V. LiCausi, P. S. McLaughlin, H. You, D. Sil, N. A. Lanzillo, H. Huang, R. Patlolla, T. Haigh, Y. Xu, C. Park, P. Kerber, H. K. Shobha, Y. Kim, J. Demarest, J. Li, G. Lian, M. Ali, C. T Le, E. T. Ryan, L. A. Clevenger, D. F. Canaperi, T. E. Standaert, G. Bonilla, E. Huang
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract scaling, materials science, insulator, exponential growth, electronic engineering, electrical resistivity and conductivity, dielectric, chamfer, audio time scale pitch modification
Future on-chip interconnect metallization and electromigration
C.-K. Hu, J. Kelly, H. Huang, K. Motoyama, H. Shobha, Y. Ostrovski, J. H-C Chen, R. Patlolla, B. Peethala, P. Adusumilli, T. Spooner, R. Quon, L. M. Gignac, C. Breslin, G. Lian, M. Ali, J. Benedict, X. S. Lin, S. Smith, V. Kamineni, X. Zhang, F. Mont, S. Siddiqui, F. Baumann
2018 IEEE International Reliability Physics Symposium (IRPS)
Abstract wafer, engineering, electronic engineering, electromigration, electrical resistivity and conductivity, analytical chemistry
C.-K. Hu, J. Kelly, H. Huang, K. Motoyama, H. Shobha, Y. Ostrovski, J. H-C Chen, R. Patlolla, B. Peethala, P. Adusumilli, T. Spooner, R. Quon, L. M. Gignac, C. Breslin, G. Lian, M. Ali, J. Benedict, X. S. Lin, S. Smith, V. Kamineni, X. Zhang, F. Mont, S. Siddiqui, F. Baumann
2018 IEEE International Reliability Physics Symposium (IRPS)
Abstract wafer, engineering, electronic engineering, electromigration, electrical resistivity and conductivity, analytical chemistry
Impact of Liner Metals on Copper Resistivity at Beyond 7nm Dimensions
H. Huang, N. Lanzillo, T. E. Standaert, K. Motoyama, C. Yang, H. Shobha, J. F. Maniscalco, T. Nogami, J. Li, T. A. Spooner, G. Bonilla
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract thermal conduction, temperature coefficient, ruthenium, metallurgy, metal, materials science, grain boundary, electrical resistivity and conductivity, copper, composite material, cobalt
H. Huang, N. Lanzillo, T. E. Standaert, K. Motoyama, C. Yang, H. Shobha, J. F. Maniscalco, T. Nogami, J. Li, T. A. Spooner, G. Bonilla
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract thermal conduction, temperature coefficient, ruthenium, metallurgy, metal, materials science, grain boundary, electrical resistivity and conductivity, copper, composite material, cobalt
Ru Liner Scaling with ALD TaN Barrier Process for Low Resistance 7 nm Cu Interconnects and Beyond
K. Motoyama, O. van der Straten, J. Maniscalco, H. Huang, Yb. Kim, Jk. Choi, Jh. Lee, C.-K. Hu, P. McLaughlin, T. Standaert, R. Quon, G. Bonilla
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract metallurgy, materials science, composite material, bilayer
K. Motoyama, O. van der Straten, J. Maniscalco, H. Huang, Yb. Kim, Jk. Choi, Jh. Lee, C.-K. Hu, P. McLaughlin, T. Standaert, R. Quon, G. Bonilla
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract metallurgy, materials science, composite material, bilayer
2017
Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node
Benjamin D. Briggs, C. B. Peethala, D. L. Rath, J. Lee, S. Nguyen, N. V. LiCausi, P. S. McLaughlin, H. You, D. Sil, N. A. Lanzillo, H. Huang, R. Patlolla, T. Haigh, Y. Xu, C. Park, P. Kerber, H. K. Shobha, Y. Kim, J. Demarest, J. Li, G. Lian, M. Ali, C. T. Le, E. T. Ryan, L. A. Clevenger, D. F. Canaperi, T. E. Standaert, G. Bonilla, E. Huang
2017 IEEE International Electron Devices Meeting (IEDM)
Abstract time dependent gate oxide breakdown, selectivity, scaling, physics, insulator, electronic engineering, dielectric, contact area
Benjamin D. Briggs, C. B. Peethala, D. L. Rath, J. Lee, S. Nguyen, N. V. LiCausi, P. S. McLaughlin, H. You, D. Sil, N. A. Lanzillo, H. Huang, R. Patlolla, T. Haigh, Y. Xu, C. Park, P. Kerber, H. K. Shobha, Y. Kim, J. Demarest, J. Li, G. Lian, M. Ali, C. T. Le, E. T. Ryan, L. A. Clevenger, D. F. Canaperi, T. E. Standaert, G. Bonilla, E. Huang
2017 IEEE International Electron Devices Meeting (IEDM)
Abstract time dependent gate oxide breakdown, selectivity, scaling, physics, insulator, electronic engineering, dielectric, contact area
Line Resistance Reduction in Advanced Copper Interconnects
C-C Yang, T Standaert, H Huang, M Ali, G Lian, D Edelstein, G Bonilla
IEEE Electron Device Letters 38(11), 1579--1582, IEEE, 2017
C-C Yang, T Standaert, H Huang, M Ali, G Lian, D Edelstein, G Bonilla
IEEE Electron Device Letters 38(11), 1579--1582, IEEE, 2017
Microstructure modulation for resistance reduction in copper interconnects
C-C Yang, T Spooner, P McLaughlin, CK Hu, H Huang, Y Mignot, M Ali, G Lian, R Quon, T Standaert, others
Interconnect Technology Conference (IITC), 2017 IEEE International, pp. 1--3
C-C Yang, T Spooner, P McLaughlin, CK Hu, H Huang, Y Mignot, M Ali, G Lian, R Quon, T Standaert, others
Interconnect Technology Conference (IITC), 2017 IEEE International, pp. 1--3
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
T Nogami, X Zhang, J Kelly, B Briggs, H You, R Patlolla, H Huang, P McLaughlin, J Lee, H Shobha, others
VLSI Technology, 2017 Symposium on, pp. T148--T149
T Nogami, X Zhang, J Kelly, B Briggs, H You, R Patlolla, H Huang, P McLaughlin, J Lee, H Shobha, others
VLSI Technology, 2017 Symposium on, pp. T148--T149
Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines
T Nogami, R Patlolla, J Kelly, B Briggs, H Huang, J Demarest, J Li, R Hengstebeck, X Zhang, G Lian, others
Interconnect Technology Conference (IITC), 2017 IEEE International, pp. 1--3
T Nogami, R Patlolla, J Kelly, B Briggs, H Huang, J Demarest, J Li, R Hengstebeck, X Zhang, G Lian, others
Interconnect Technology Conference (IITC), 2017 IEEE International, pp. 1--3
Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires
C-K Hu, J Kelly, J HC Chen, H Huang, Y Ostrovski, R Patlolla, B Peethala, P Adusumilli, T Spooner, LM Gignac, others
Interconnect Technology Conference (IITC), 2017 IEEE International, pp. 1--3
C-K Hu, J Kelly, J HC Chen, H Huang, Y Ostrovski, R Patlolla, B Peethala, P Adusumilli, T Spooner, LM Gignac, others
Interconnect Technology Conference (IITC), 2017 IEEE International, pp. 1--3
Methods to lower the resistivity of ruthenium interconnects at 7 nm node and beyond
Xunyuan Zhang, Huai Huang, Raghuveer Patlolla, Frank W Mont, Xuan Lin, Mark Raymond, Cathy Labelle, E Todd Ryan, Donald Canaperi, Theodore E Standaert, others
Interconnect Technology Conference (IITC), 2017 IEEE International, pp. 1--3
Xunyuan Zhang, Huai Huang, Raghuveer Patlolla, Frank W Mont, Xuan Lin, Mark Raymond, Cathy Labelle, E Todd Ryan, Donald Canaperi, Theodore E Standaert, others
Interconnect Technology Conference (IITC), 2017 IEEE International, pp. 1--3
SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery
John N Myers, Xiaoxian Zhang, Huai Huang, Hosadurga Shobha, Alfred Grill, Zhan Chen
Applied Physics Letters 110(18), 182902, AIP Publishing, 2017
John N Myers, Xiaoxian Zhang, Huai Huang, Hosadurga Shobha, Alfred Grill, Zhan Chen
Applied Physics Letters 110(18), 182902, AIP Publishing, 2017
An OCD perspective of line edge and line width roughness metrology
Ravi Bonam, Raja Muthinti, Mary Breton, Chi-Chun Liu, Stuart Sieg, Indira Seshadri, Nicole Saulnier, Jeffrey Shearer, Raghuveer Patlolla, Huai Huang
Metrology, Inspection, and Process Control for Microlithography XXXI, pp. 1014511, 2017
Ravi Bonam, Raja Muthinti, Mary Breton, Chi-Chun Liu, Stuart Sieg, Indira Seshadri, Nicole Saulnier, Jeffrey Shearer, Raghuveer Patlolla, Huai Huang
Metrology, Inspection, and Process Control for Microlithography XXXI, pp. 1014511, 2017
Comprehensive analysis of line-edge and line-width roughness for EUV lithography
Ravi Bonam, Chi-Chun Liu, Mary Breton, Stuart Sieg, Indira Seshadri, Nicole Saulnier, Jeffrey Shearer, Raja Muthinti, Raghuveer Patlolla, Huai Huang
Extreme Ultraviolet (EUV) Lithography VIII, pp. 101431A, 2017
Ravi Bonam, Chi-Chun Liu, Mary Breton, Stuart Sieg, Indira Seshadri, Nicole Saulnier, Jeffrey Shearer, Raja Muthinti, Raghuveer Patlolla, Huai Huang
Extreme Ultraviolet (EUV) Lithography VIII, pp. 101431A, 2017
Advanced single precursor based pSiCOH k= 2.4 for ULSI interconnects
Deepika Priyadarshini, Son V Nguyen, Hosadurga Shobha, Eric Liniger, James H-C Chen, Huai Huang, Stephan A Cohen, Alfred Grill
Journal of Vacuum Science \& Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35(2), 021201, AVS, 2017
Deepika Priyadarshini, Son V Nguyen, Hosadurga Shobha, Eric Liniger, James H-C Chen, Huai Huang, Stephan A Cohen, Alfred Grill
Journal of Vacuum Science \& Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35(2), 021201, AVS, 2017
Line Resistance Reduction in Advanced Copper Interconnects
Yang, C-C and Standaert, T and Huang, H and Ali, M and Lian, G and Edelstein, D and Bonilla, G
IEEE Electron Device Letters 38(11), 1579--1582, IEEE, 2017
Abstract
Yang, C-C and Standaert, T and Huang, H and Ali, M and Lian, G and Edelstein, D and Bonilla, G
IEEE Electron Device Letters 38(11), 1579--1582, IEEE, 2017
Abstract
2016
Experimental study of nanoscale Co damascene BEOL interconnect structures
J Kelly, JH-C Chen, H Huang, CK Hu, E Liniger, R Patlolla, B Peethala, P Adusumilli, H Shobha, T Nogami, others
Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2016 IEEE International, pp. 40--42
J Kelly, JH-C Chen, H Huang, CK Hu, E Liniger, R Patlolla, B Peethala, P Adusumilli, H Shobha, T Nogami, others
Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2016 IEEE International, pp. 40--42
Post porosity plasma protection integration at 48 nm pitch
Huai Huang, Krystelle Lionti, Willi Volksen, Terry Spooner, Hosadurga Shobha, Joe Lee, James Hsueh-Chung Chen, Teddie Magbitang, Brown Peethala, Eric G Liniger, others
Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2016 IEEE International, pp. 153--155
Huai Huang, Krystelle Lionti, Willi Volksen, Terry Spooner, Hosadurga Shobha, Joe Lee, James Hsueh-Chung Chen, Teddie Magbitang, Brown Peethala, Eric G Liniger, others
Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2016 IEEE International, pp. 153--155
A novel analytical capacitance model for sub-10 nm interconnects
Indira Seshadri, Huai Huang, Pranita Kerber, James Chen, Larry Clevenger
Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2016 IEEE International, pp. 141--143
Indira Seshadri, Huai Huang, Pranita Kerber, James Chen, Larry Clevenger
Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2016 IEEE International, pp. 141--143
Ruthenium interconnect resistivity and reliability at 48 nm pitch
Xunyuan Zhang, Huai Huang, Raghuveer Patlolla, Wei Wang, Frank W Mont, Juntao Li, Chao-Kun Hu, Eric G Liniger, Paul S McLaughlin, Cathy Labelle, others
Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2016 IEEE International, pp. 31--33
Xunyuan Zhang, Huai Huang, Raghuveer Patlolla, Wei Wang, Frank W Mont, Juntao Li, Chao-Kun Hu, Eric G Liniger, Paul S McLaughlin, Cathy Labelle, others
Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2016 IEEE International, pp. 31--33
SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH
Xiaoxian Zhang, John N Myers, Huai Huang, Hosadurga Shobha, Zhan Chen, Alfred Grill
Journal of Applied Physics 119(8), 084101, AIP Publishing, 2016
Xiaoxian Zhang, John N Myers, Huai Huang, Hosadurga Shobha, Zhan Chen, Alfred Grill
Journal of Applied Physics 119(8), 084101, AIP Publishing, 2016
2015
Highly robust advanced single precursor based k 2.4 ILD for Beol Cu interconnects
Deepika Priyadarshini, Son van Nguyen, Hosadurga k Shobha, ET Ryan, Steven M Gates, Huai Huang, James Chen, Eric Liniger, Stephan A Cohen, Chao-kun Hu, others
Meeting Abstracts, pp. 824--824, 2015
Deepika Priyadarshini, Son van Nguyen, Hosadurga k Shobha, ET Ryan, Steven M Gates, Huai Huang, James Chen, Eric Liniger, Stephan A Cohen, Chao-kun Hu, others
Meeting Abstracts, pp. 824--824, 2015
Highly reliable pSiCOH k= 2.4 interconnect dielectric for sub-10 nm nodes fabricated with single precursor
S Nguyen, D Priyadarsini, H Shobha, EG Liniger, SA Cohen
MRS Spring Meeting, 2015
S Nguyen, D Priyadarsini, H Shobha, EG Liniger, SA Cohen
MRS Spring Meeting, 2015
2013
Plasma processing of low-k dielectrics
Baklanov, Mikhail R and de Marneffe, Jean-Francois and Shamiryan, Denis and Urbanowicz, Adam M and Shi, Hualiang and Rakhimova, Tatyana V and Huang, Huai and Ho, Paul S
Journal of Applied Physics 113(4), 4, AIP, 2013
Abstract
Baklanov, Mikhail R and de Marneffe, Jean-Francois and Shamiryan, Denis and Urbanowicz, Adam M and Shi, Hualiang and Rakhimova, Tatyana V and Huang, Huai and Ho, Paul S
Journal of Applied Physics 113(4), 4, AIP, 2013
Abstract
2012
Plasma processing of low-k dielectrics
Hualiang Shi, Denis Shamiryan, Jean-Fran\c{c}ois de Marneffe, Huai Huang, MR Baklanov, PS Ho
Advanced Interconnects for ULSI Technology, 79, John Wiley \& Sons, Ltd., 2012
Hualiang Shi, Denis Shamiryan, Jean-Fran\c{c}ois de Marneffe, Huai Huang, MR Baklanov, PS Ho
Advanced Interconnects for ULSI Technology, 79, John Wiley \& Sons, Ltd., 2012
Role of ions, photons, and radicals in inducing plasma damage to ultra low-k dielectrics
Shi, Hualiang and Huang, Huai and Bao, Junjing and Liu, Junjun and Ho, Paul S and Zhou, Yifeng and Pender, Jeremy T and Armacost, Michael D and Kyser, David
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30(1), 011206, AVS, 2012
Abstract
Shi, Hualiang and Huang, Huai and Bao, Junjing and Liu, Junjun and Ho, Paul S and Zhou, Yifeng and Pender, Jeremy T and Armacost, Michael D and Kyser, David
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30(1), 011206, AVS, 2012
Abstract
2010
Moinpour M and Kloster GM
J Bao, H Shi, H Huang, PS Ho, ML McSwiney, MD Goodner
J. Vac. Sci. Technol. A2010, 28
J Bao, H Shi, H Huang, PS Ho, ML McSwiney, MD Goodner
J. Vac. Sci. Technol. A2010, 28
Dielectric recovery of plasma damaged organosilicate low-k films by combining UV and silylation treatments
H Huang, JJ Bao, H Huang, JJ Liu, RS Smith, Y Sun, PS Ho, ML McSwiney, M Moinpour, GM Kloster
Mater. Res. Soc. Symp. Proc. D, pp. N02--10, 2010
H Huang, JJ Bao, H Huang, JJ Liu, RS Smith, Y Sun, PS Ho, ML McSwiney, M Moinpour, GM Kloster
Mater. Res. Soc. Symp. Proc. D, pp. N02--10, 2010
Oxygen plasma damage to blanket and patterned ultralow-$\kappa$ surfaces
J Bao, H Shi, H Huang, PS Ho, ML McSwiney, MD Goodner, M Moinpour, GM Kloster
Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and Films 28(2), 207--215, AVS, 2010
J Bao, H Shi, H Huang, PS Ho, ML McSwiney, MD Goodner, M Moinpour, GM Kloster
Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and Films 28(2), 207--215, AVS, 2010
Minimization of plasma ashing damage to OSG low-k dielectrics
H Shi, H Huang, J Im, PS Ho, Y Zhou, JT Pender, M Armacost, D Kyser
Interconnect Technology Conference (IITC), 2010 International, pp. 1--3
H Shi, H Huang, J Im, PS Ho, Y Zhou, JT Pender, M Armacost, D Kyser
Interconnect Technology Conference (IITC), 2010 International, pp. 1--3
2009
Small angle X-ray scattering measurements of spatial dependent linewidth in dense nanoline gratings
Chengqing Wang, Wei-En Fu, Bin Li, Huai Huang, Christopher Soles, Eric K Lin, Wen-li Wu, Paul S Ho, Michael W Cresswell
Thin Solid Films 517(20), 5844--5847, Elsevier, 2009
Chengqing Wang, Wei-En Fu, Bin Li, Huai Huang, Christopher Soles, Eric K Lin, Wen-li Wu, Paul S Ho, Michael W Cresswell
Thin Solid Films 517(20), 5844--5847, Elsevier, 2009
Plasma altered layer model for plasma damage characterization of porous OSG films
H Shi, H Huang, J Bao, J Im, PS Ho, Y Zhou, JT Pender, M Armacost, D Kyser
Interconnect Technology Conference, 2009. IITC 2009. IEEE International, pp. 78--80
H Shi, H Huang, J Bao, J Im, PS Ho, Y Zhou, JT Pender, M Armacost, D Kyser
Interconnect Technology Conference, 2009. IITC 2009. IEEE International, pp. 78--80
Indentation of single-crystal silicon nanolines: Buckling and contact friction at nanoscales
Bin Li, Qiu Zhao, Huai Huang, Zhiquan Luo, Min K Kang, Jang-Hi Im, Richard A Allen, Michael W Cresswell, Rui Huang, Paul S Ho
Journal of Applied Physics 105(7), 073510, AIP, 2009
Bin Li, Qiu Zhao, Huai Huang, Zhiquan Luo, Min K Kang, Jang-Hi Im, Richard A Allen, Michael W Cresswell, Rui Huang, Paul S Ho
Journal of Applied Physics 105(7), 073510, AIP, 2009
Nanoindentation of Si Nanostructures: Buckling and Friction at Nanoscales
Huai Huang, Bin Li, Qiu Zhao, Zhiquan Luo, Jay Im, Min K Kang, Richard A Allen, Michael W Cresswell, Rui Huang, Paul S Ho
AIP Conference Proceedings, pp. 204--212, 2009
Huai Huang, Bin Li, Qiu Zhao, Zhiquan Luo, Jay Im, Min K Kang, Richard A Allen, Michael W Cresswell, Rui Huang, Paul S Ho
AIP Conference Proceedings, pp. 204--212, 2009
2008
Mechanical Characterization of High Aspect Ratio Silicon Nanolines
Huai Huang, Qiu Zhao, Zhiquan Luo, Jang-Hi Im, Paul S Ho, Min Kyoo Kang, Rui Huang, Michael W Cresswell
MRS Online Proceedings Library Archive1086, Cambridge University Press, 2008
Huai Huang, Qiu Zhao, Zhiquan Luo, Jang-Hi Im, Paul S Ho, Min Kyoo Kang, Rui Huang, Michael W Cresswell
MRS Online Proceedings Library Archive1086, Cambridge University Press, 2008
Dielectric Recovery of Plasma Damaged Organosilicate Low-k Films
Hualiang Shi, Junjing Bao, Huai Huang, Junjun Liu, Ryan Scott Smith, Yangming Sun, Paul S Ho, Michael L McSwiney, Mansour Moinpour, Grant M Kloster
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pp. 1079--N02, 2008
Hualiang Shi, Junjing Bao, Huai Huang, Junjun Liu, Ryan Scott Smith, Yangming Sun, Paul S Ho, Michael L McSwiney, Mansour Moinpour, Grant M Kloster
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pp. 1079--N02, 2008
Mechanical characterization of high aspect ratio silicon nanolines
Bin Li, Huai Huang, Qiu Zhao, Zhiquan Luo, Jang-Hi Im, Paul S Ho, Min Kyoo Kang, Rui Huang, Michael W Cresswell
MaterialsResearch Society1086, 05--09, 2008
Bin Li, Huai Huang, Qiu Zhao, Zhiquan Luo, Jang-Hi Im, Paul S Ho, Min Kyoo Kang, Rui Huang, Michael W Cresswell
MaterialsResearch Society1086, 05--09, 2008
Extraction of trench geometry and linewidth of nanoscale grating targets in (110)-oriented silicon using angle-resolved scatterometry
Heather J Patrick, Thomas A Germer, Michael W Cresswell, Bin Li, Huai Huang, Paul S Ho
Instrumentation, Metrology, and Standards for Nanomanufacturing II, pp. 70420B, 2008
Heather J Patrick, Thomas A Germer, Michael W Cresswell, Bin Li, Huai Huang, Paul S Ho
Instrumentation, Metrology, and Standards for Nanomanufacturing II, pp. 70420B, 2008
Dielectric Recovery of Plasma Damaged Organosilicate Low-k Films
Huai Huang, Junjing Bao, Junjun Liu, Ryan Scott Smith, Yangming Sun, Paul S Ho, Michael L McSwiney, Mansour Moinpour, Grant M Kloster
MRS Online Proceedings Library Archive1079, Cambridge University Press, 2008
Huai Huang, Junjing Bao, Junjun Liu, Ryan Scott Smith, Yangming Sun, Paul S Ho, Michael L McSwiney, Mansour Moinpour, Grant M Kloster
MRS Online Proceedings Library Archive1079, Cambridge University Press, 2008
Mechanistic study of plasma damage of low k dielectric surfaces
Junjing Bao, Hualiang Shi, Junjun Liu, Huai Huang, PS Ho, MD Goodner, M Moinpour, GM Kloster
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26(1), 219--226, AVS, 2008
Junjing Bao, Hualiang Shi, Junjun Liu, Huai Huang, PS Ho, MD Goodner, M Moinpour, GM Kloster
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26(1), 219--226, AVS, 2008
Mechanistic study of CO 2 plasma damage to OSG low k dielectrics
H Shi, J Bao, H Huang, B Chao, S Smith, Y Sun, PS Ho, A Li, M Armacost, D Kyser
Interconnect Technology Conference, 2008. IITC 2008. International, pp. 31--33
H Shi, J Bao, H Huang, B Chao, S Smith, Y Sun, PS Ho, A Li, M Armacost, D Kyser
Interconnect Technology Conference, 2008. IITC 2008. International, pp. 31--33
Origin of dielectric loss induced by oxygen plasma on organo-silicate glass low-k dielectrics
H Shi, J Bao, RS Smith, H Huang, J Liu, PS Ho, ML McSwiney, M Moinpour, GM Kloster
Applied Physics Letters 93(19), 192909, AIP, 2008
H Shi, J Bao, RS Smith, H Huang, J Liu, PS Ho, ML McSwiney, M Moinpour, GM Kloster
Applied Physics Letters 93(19), 192909, AIP, 2008
O2 plasma damage and dielectric recoveries to patterned CDO low-k dielectrics
H Huang, J Bao, H Shi, PS Ho, ML McSwiney, MD Goodner, M Moinpour, GM Kloster
Advanced Metallization Conference, 2008
H Huang, J Bao, H Shi, PS Ho, ML McSwiney, MD Goodner, M Moinpour, GM Kloster
Advanced Metallization Conference, 2008
Mechanistic study of plasma damage of low k dielectric surfaces
Bao, Junjing and Shi, Hualiang and Liu, Junjun and Huang, Huai and Ho, PS and Goodner, MD and Moinpour, M and Kloster, GM
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26(1), 219--226, AVS, 2008
Abstract
Bao, Junjing and Shi, Hualiang and Liu, Junjun and Huang, Huai and Ho, PS and Goodner, MD and Moinpour, M and Kloster, GM
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26(1), 219--226, AVS, 2008
Abstract
2007
Mechanistic Study of Plasma Damage of Low k Dielectric Surfaces
Junjing Bao, Hualiang Shi, Junjun Liu, Huai Huang, PS Ho, MD Goodner, M Moinpour, GM Kloster
AIP Conference Proceedings, pp. 125--141, 2007
Junjing Bao, Hualiang Shi, Junjun Liu, Huai Huang, PS Ho, MD Goodner, M Moinpour, GM Kloster
AIP Conference Proceedings, pp. 125--141, 2007
Effect of CH4 plasma treatment on O2 plasma ashed organosilicate low-k dielectrics
Hualiang Shi, Junjing Bao, Huai Huang, Paul S Ho, Michael D Goodner, Mansour Moinpour, Grant M Kloster, others
MRS Online Proceedings Library Archive990, Cambridge University Press, 2007
Hualiang Shi, Junjing Bao, Huai Huang, Paul S Ho, Michael D Goodner, Mansour Moinpour, Grant M Kloster, others
MRS Online Proceedings Library Archive990, Cambridge University Press, 2007
Mechanistic study of plasma damage and CH4 recovery of low k dielectric surface
JJ Bao, HL Shi, JJ Liu, H Huang, PS Ho, MD Goodner, M Moinpour, GM Kloster
International Interconnect Technology Conference, IEEE 2007, pp. 147--149
JJ Bao, HL Shi, JJ Liu, H Huang, PS Ho, MD Goodner, M Moinpour, GM Kloster
International Interconnect Technology Conference, IEEE 2007, pp. 147--149
Dielectric recoveries on O2 plasma damaged organosilicate low-k dielectrics
Hualiang Shi, Junjing Bao, Junjun Liu, Huai Huang, Ryan Scott Smith, Qiu Zhao, Paul S Ho, Michael D Goodner, Mansour Moinpour, Grant M Kloster
Proceedings of the Advanced Metallization Conference, pp. 447, 2007
Hualiang Shi, Junjing Bao, Junjun Liu, Huai Huang, Ryan Scott Smith, Qiu Zhao, Paul S Ho, Michael D Goodner, Mansour Moinpour, Grant M Kloster
Proceedings of the Advanced Metallization Conference, pp. 447, 2007
Year Unknown
Metrology and Diagnostic Techniques for Nanoelectronics
Hualiang Shi, Huai Huang, Ryan S Smith, Paul S Ho
0
Hualiang Shi, Huai Huang, Ryan S Smith, Paul S Ho
0
Nanoindentation of Si Nanostructures: Buckling and
Huai Huang, Bin Li, Qiu Zhao, Zhiquan Luo, Jay Im, Min K Kang, Richard A Allen, Michael W Cresswell, Rui Huang, Paul S Ho
0
Huai Huang, Bin Li, Qiu Zhao, Zhiquan Luo, Jay Im, Min K Kang, Richard A Allen, Michael W Cresswell, Rui Huang, Paul S Ho
0