Huai Huang  Huai Huang photo         

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S / C Quality / Reliability Eng Prof
IBM AI Hardware center, Albany NY
  +1dash518dash292dash7478

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2018

Validity and Application of the TCR Method to MOL contactS
E. Milosevic, V. Kamineni, X. Zhang, H. Dixit, M. V. Raymond, H. Huang, R. Southwick, C. Janicki, N. Lanzillo, D. Gall
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract   thermal conduction, sheet resistance, scattering theory, metallurgy, materials science, grain size, grain boundary, film analysis, electrical resistivity and conductivity, condensed matter physics, apparent temperature

Modified ALD TaN Barrier with Ru Liner and Dynamic Cu Reflow for 36nm Pitch Interconnect Integration
P. S. Bhosale, J. Maniscalco, N. Lanzillo, T. Nogami, D. Canaperi, K. Motoyama, H. Huang, P. McLaughlin, R. Shaviv, M. Stolfi, R. Vinnakota, G. How, S. Pethe, B. Sheu, X. Xie, L. Chen
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract   sputtering, physical vapor deposition, metallurgy, materials science, electromigration, composite material, chemical vapor deposition, atomic layer deposition

Process Challenges in Fully Aligned Via Integration for sub 32 nm Pitch BEOL
Benjamin D. Briggs, C. B. Pcethala, D. L. Rath, J. Lee, S. Nguyen, N. V. LiCausi, P. S. McLaughlin, H. You, D. Sil, N. A. Lanzillo, H. Huang, R. Patlolla, T. Haigh, Y. Xu, C. Park, P. Kerber, H. K. Shobha, Y. Kim, J. Demarest, J. Li, G. Lian, M. Ali, C. T Le, E. T. Ryan, L. A. Clevenger, D. F. Canaperi, T. E. Standaert, G. Bonilla, E. Huang
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract   scaling, materials science, insulator, exponential growth, electronic engineering, electrical resistivity and conductivity, dielectric, chamfer, audio time scale pitch modification

Future on-chip interconnect metallization and electromigration
C.-K. Hu, J. Kelly, H. Huang, K. Motoyama, H. Shobha, Y. Ostrovski, J. H-C Chen, R. Patlolla, B. Peethala, P. Adusumilli, T. Spooner, R. Quon, L. M. Gignac, C. Breslin, G. Lian, M. Ali, J. Benedict, X. S. Lin, S. Smith, V. Kamineni, X. Zhang, F. Mont, S. Siddiqui, F. Baumann
2018 IEEE International Reliability Physics Symposium (IRPS)
Abstract   wafer, engineering, electronic engineering, electromigration, electrical resistivity and conductivity, analytical chemistry

Impact of Liner Metals on Copper Resistivity at Beyond 7nm Dimensions
H. Huang, N. Lanzillo, T. E. Standaert, K. Motoyama, C. Yang, H. Shobha, J. F. Maniscalco, T. Nogami, J. Li, T. A. Spooner, G. Bonilla
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract   thermal conduction, temperature coefficient, ruthenium, metallurgy, metal, materials science, grain boundary, electrical resistivity and conductivity, copper, composite material, cobalt

Ru Liner Scaling with ALD TaN Barrier Process for Low Resistance 7 nm Cu Interconnects and Beyond
K. Motoyama, O. van der Straten, J. Maniscalco, H. Huang, Yb. Kim, Jk. Choi, Jh. Lee, C.-K. Hu, P. McLaughlin, T. Standaert, R. Quon, G. Bonilla
2018 IEEE International Interconnect Technology Conference (IITC)
Abstract   metallurgy, materials science, composite material, bilayer


2017

Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node
Benjamin D. Briggs, C. B. Peethala, D. L. Rath, J. Lee, S. Nguyen, N. V. LiCausi, P. S. McLaughlin, H. You, D. Sil, N. A. Lanzillo, H. Huang, R. Patlolla, T. Haigh, Y. Xu, C. Park, P. Kerber, H. K. Shobha, Y. Kim, J. Demarest, J. Li, G. Lian, M. Ali, C. T. Le, E. T. Ryan, L. A. Clevenger, D. F. Canaperi, T. E. Standaert, G. Bonilla, E. Huang
2017 IEEE International Electron Devices Meeting (IEDM)
Abstract   time dependent gate oxide breakdown, selectivity, scaling, physics, insulator, electronic engineering, dielectric, contact area

Line Resistance Reduction in Advanced Copper Interconnects
C-C Yang, T Standaert, H Huang, M Ali, G Lian, D Edelstein, G Bonilla
IEEE Electron Device Letters 38(11), 1579--1582, IEEE, 2017

Microstructure modulation for resistance reduction in copper interconnects
C-C Yang, T Spooner, P McLaughlin, CK Hu, H Huang, Y Mignot, M Ali, G Lian, R Quon, T Standaert, others
Interconnect Technology Conference (IITC), 2017 IEEE International, pp. 1--3

Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
T Nogami, X Zhang, J Kelly, B Briggs, H You, R Patlolla, H Huang, P McLaughlin, J Lee, H Shobha, others
VLSI Technology, 2017 Symposium on, pp. T148--T149

Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines
T Nogami, R Patlolla, J Kelly, B Briggs, H Huang, J Demarest, J Li, R Hengstebeck, X Zhang, G Lian, others
Interconnect Technology Conference (IITC), 2017 IEEE International, pp. 1--3

Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires
C-K Hu, J Kelly, J HC Chen, H Huang, Y Ostrovski, R Patlolla, B Peethala, P Adusumilli, T Spooner, LM Gignac, others
Interconnect Technology Conference (IITC), 2017 IEEE International, pp. 1--3

Methods to lower the resistivity of ruthenium interconnects at 7 nm node and beyond
Xunyuan Zhang, Huai Huang, Raghuveer Patlolla, Frank W Mont, Xuan Lin, Mark Raymond, Cathy Labelle, E Todd Ryan, Donald Canaperi, Theodore E Standaert, others
Interconnect Technology Conference (IITC), 2017 IEEE International, pp. 1--3

SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery
John N Myers, Xiaoxian Zhang, Huai Huang, Hosadurga Shobha, Alfred Grill, Zhan Chen
Applied Physics Letters 110(18), 182902, AIP Publishing, 2017

An OCD perspective of line edge and line width roughness metrology
Ravi Bonam, Raja Muthinti, Mary Breton, Chi-Chun Liu, Stuart Sieg, Indira Seshadri, Nicole Saulnier, Jeffrey Shearer, Raghuveer Patlolla, Huai Huang
Metrology, Inspection, and Process Control for Microlithography XXXI, pp. 1014511, 2017

Comprehensive analysis of line-edge and line-width roughness for EUV lithography
Ravi Bonam, Chi-Chun Liu, Mary Breton, Stuart Sieg, Indira Seshadri, Nicole Saulnier, Jeffrey Shearer, Raja Muthinti, Raghuveer Patlolla, Huai Huang
Extreme Ultraviolet (EUV) Lithography VIII, pp. 101431A, 2017

Advanced single precursor based pSiCOH k= 2.4 for ULSI interconnects
Deepika Priyadarshini, Son V Nguyen, Hosadurga Shobha, Eric Liniger, James H-C Chen, Huai Huang, Stephan A Cohen, Alfred Grill
Journal of Vacuum Science \& Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35(2), 021201, AVS, 2017

Line Resistance Reduction in Advanced Copper Interconnects
Yang, C-C and Standaert, T and Huang, H and Ali, M and Lian, G and Edelstein, D and Bonilla, G
IEEE Electron Device Letters 38(11), 1579--1582, IEEE, 2017
Abstract


2016

Experimental study of nanoscale Co damascene BEOL interconnect structures
J Kelly, JH-C Chen, H Huang, CK Hu, E Liniger, R Patlolla, B Peethala, P Adusumilli, H Shobha, T Nogami, others
Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2016 IEEE International, pp. 40--42

Post porosity plasma protection integration at 48 nm pitch
Huai Huang, Krystelle Lionti, Willi Volksen, Terry Spooner, Hosadurga Shobha, Joe Lee, James Hsueh-Chung Chen, Teddie Magbitang, Brown Peethala, Eric G Liniger, others
Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2016 IEEE International, pp. 153--155

A novel analytical capacitance model for sub-10 nm interconnects
Indira Seshadri, Huai Huang, Pranita Kerber, James Chen, Larry Clevenger
Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2016 IEEE International, pp. 141--143

Ruthenium interconnect resistivity and reliability at 48 nm pitch
Xunyuan Zhang, Huai Huang, Raghuveer Patlolla, Wei Wang, Frank W Mont, Juntao Li, Chao-Kun Hu, Eric G Liniger, Paul S McLaughlin, Cathy Labelle, others
Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2016 IEEE International, pp. 31--33

SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH
Xiaoxian Zhang, John N Myers, Huai Huang, Hosadurga Shobha, Zhan Chen, Alfred Grill
Journal of Applied Physics 119(8), 084101, AIP Publishing, 2016


2015

Highly robust advanced single precursor based k 2.4 ILD for Beol Cu interconnects
Deepika Priyadarshini, Son van Nguyen, Hosadurga k Shobha, ET Ryan, Steven M Gates, Huai Huang, James Chen, Eric Liniger, Stephan A Cohen, Chao-kun Hu, others
Meeting Abstracts, pp. 824--824, 2015

Highly reliable pSiCOH k= 2.4 interconnect dielectric for sub-10 nm nodes fabricated with single precursor
S Nguyen, D Priyadarsini, H Shobha, EG Liniger, SA Cohen
MRS Spring Meeting, 2015


2013

Plasma processing of low-k dielectrics
Baklanov, Mikhail R and de Marneffe, Jean-Francois and Shamiryan, Denis and Urbanowicz, Adam M and Shi, Hualiang and Rakhimova, Tatyana V and Huang, Huai and Ho, Paul S
Journal of Applied Physics 113(4), 4, AIP, 2013
Abstract


2012

Plasma processing of low-k dielectrics
Hualiang Shi, Denis Shamiryan, Jean-Fran\c{c}ois de Marneffe, Huai Huang, MR Baklanov, PS Ho
Advanced Interconnects for ULSI Technology, 79, John Wiley \& Sons, Ltd., 2012

Role of ions, photons, and radicals in inducing plasma damage to ultra low-k dielectrics
Shi, Hualiang and Huang, Huai and Bao, Junjing and Liu, Junjun and Ho, Paul S and Zhou, Yifeng and Pender, Jeremy T and Armacost, Michael D and Kyser, David
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30(1), 011206, AVS, 2012
Abstract


2010

Moinpour M and Kloster GM
J Bao, H Shi, H Huang, PS Ho, ML McSwiney, MD Goodner
J. Vac. Sci. Technol. A2010, 28

Dielectric recovery of plasma damaged organosilicate low-k films by combining UV and silylation treatments
H Huang, JJ Bao, H Huang, JJ Liu, RS Smith, Y Sun, PS Ho, ML McSwiney, M Moinpour, GM Kloster
Mater. Res. Soc. Symp. Proc. D, pp. N02--10, 2010

Oxygen plasma damage to blanket and patterned ultralow-$\kappa$ surfaces
J Bao, H Shi, H Huang, PS Ho, ML McSwiney, MD Goodner, M Moinpour, GM Kloster
Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and Films 28(2), 207--215, AVS, 2010

Minimization of plasma ashing damage to OSG low-k dielectrics
H Shi, H Huang, J Im, PS Ho, Y Zhou, JT Pender, M Armacost, D Kyser
Interconnect Technology Conference (IITC), 2010 International, pp. 1--3


2009

Small angle X-ray scattering measurements of spatial dependent linewidth in dense nanoline gratings
Chengqing Wang, Wei-En Fu, Bin Li, Huai Huang, Christopher Soles, Eric K Lin, Wen-li Wu, Paul S Ho, Michael W Cresswell
Thin Solid Films 517(20), 5844--5847, Elsevier, 2009

Plasma altered layer model for plasma damage characterization of porous OSG films
H Shi, H Huang, J Bao, J Im, PS Ho, Y Zhou, JT Pender, M Armacost, D Kyser
Interconnect Technology Conference, 2009. IITC 2009. IEEE International, pp. 78--80

Indentation of single-crystal silicon nanolines: Buckling and contact friction at nanoscales
Bin Li, Qiu Zhao, Huai Huang, Zhiquan Luo, Min K Kang, Jang-Hi Im, Richard A Allen, Michael W Cresswell, Rui Huang, Paul S Ho
Journal of Applied Physics 105(7), 073510, AIP, 2009

Nanoindentation of Si Nanostructures: Buckling and Friction at Nanoscales
Huai Huang, Bin Li, Qiu Zhao, Zhiquan Luo, Jay Im, Min K Kang, Richard A Allen, Michael W Cresswell, Rui Huang, Paul S Ho
AIP Conference Proceedings, pp. 204--212, 2009


2008

Mechanical Characterization of High Aspect Ratio Silicon Nanolines
Huai Huang, Qiu Zhao, Zhiquan Luo, Jang-Hi Im, Paul S Ho, Min Kyoo Kang, Rui Huang, Michael W Cresswell
MRS Online Proceedings Library Archive1086, Cambridge University Press, 2008

Dielectric Recovery of Plasma Damaged Organosilicate Low-k Films
Hualiang Shi, Junjing Bao, Huai Huang, Junjun Liu, Ryan Scott Smith, Yangming Sun, Paul S Ho, Michael L McSwiney, Mansour Moinpour, Grant M Kloster
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, pp. 1079--N02, 2008

Mechanical characterization of high aspect ratio silicon nanolines
Bin Li, Huai Huang, Qiu Zhao, Zhiquan Luo, Jang-Hi Im, Paul S Ho, Min Kyoo Kang, Rui Huang, Michael W Cresswell
MaterialsResearch Society1086, 05--09, 2008

Extraction of trench geometry and linewidth of nanoscale grating targets in (110)-oriented silicon using angle-resolved scatterometry
Heather J Patrick, Thomas A Germer, Michael W Cresswell, Bin Li, Huai Huang, Paul S Ho
Instrumentation, Metrology, and Standards for Nanomanufacturing II, pp. 70420B, 2008

Dielectric Recovery of Plasma Damaged Organosilicate Low-k Films
Huai Huang, Junjing Bao, Junjun Liu, Ryan Scott Smith, Yangming Sun, Paul S Ho, Michael L McSwiney, Mansour Moinpour, Grant M Kloster
MRS Online Proceedings Library Archive1079, Cambridge University Press, 2008

Mechanistic study of plasma damage of low k dielectric surfaces
Junjing Bao, Hualiang Shi, Junjun Liu, Huai Huang, PS Ho, MD Goodner, M Moinpour, GM Kloster
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26(1), 219--226, AVS, 2008

Mechanistic study of CO 2 plasma damage to OSG low k dielectrics
H Shi, J Bao, H Huang, B Chao, S Smith, Y Sun, PS Ho, A Li, M Armacost, D Kyser
Interconnect Technology Conference, 2008. IITC 2008. International, pp. 31--33

Origin of dielectric loss induced by oxygen plasma on organo-silicate glass low-k dielectrics
H Shi, J Bao, RS Smith, H Huang, J Liu, PS Ho, ML McSwiney, M Moinpour, GM Kloster
Applied Physics Letters 93(19), 192909, AIP, 2008

O2 plasma damage and dielectric recoveries to patterned CDO low-k dielectrics
H Huang, J Bao, H Shi, PS Ho, ML McSwiney, MD Goodner, M Moinpour, GM Kloster
Advanced Metallization Conference, 2008

Mechanistic study of plasma damage of low k dielectric surfaces
Bao, Junjing and Shi, Hualiang and Liu, Junjun and Huang, Huai and Ho, PS and Goodner, MD and Moinpour, M and Kloster, GM
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26(1), 219--226, AVS, 2008
Abstract


2007

Mechanistic Study of Plasma Damage of Low k Dielectric Surfaces
Junjing Bao, Hualiang Shi, Junjun Liu, Huai Huang, PS Ho, MD Goodner, M Moinpour, GM Kloster
AIP Conference Proceedings, pp. 125--141, 2007

Effect of CH4 plasma treatment on O2 plasma ashed organosilicate low-k dielectrics
Hualiang Shi, Junjing Bao, Huai Huang, Paul S Ho, Michael D Goodner, Mansour Moinpour, Grant M Kloster, others
MRS Online Proceedings Library Archive990, Cambridge University Press, 2007

Mechanistic study of plasma damage and CH4 recovery of low k dielectric surface
JJ Bao, HL Shi, JJ Liu, H Huang, PS Ho, MD Goodner, M Moinpour, GM Kloster
International Interconnect Technology Conference, IEEE 2007, pp. 147--149

Dielectric recoveries on O2 plasma damaged organosilicate low-k dielectrics
Hualiang Shi, Junjing Bao, Junjun Liu, Huai Huang, Ryan Scott Smith, Qiu Zhao, Paul S Ho, Michael D Goodner, Mansour Moinpour, Grant M Kloster
Proceedings of the Advanced Metallization Conference, pp. 447, 2007


Year Unknown

Metrology and Diagnostic Techniques for Nanoelectronics
Hualiang Shi, Huai Huang, Ryan S Smith, Paul S Ho
0

Nanoindentation of Si Nanostructures: Buckling and
Huai Huang, Bin Li, Qiu Zhao, Zhiquan Luo, Jay Im, Min K Kang, Richard A Allen, Michael W Cresswell, Rui Huang, Paul S Ho
0