Huai Huang 
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S / C Quality / Reliability Eng ProfIBM AI Hardware center, Albany NY +1
5182927478
5182927478 links
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More information: Google scholar profile2018
Skip-vias bypassing a metallization level at minimum pitch
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael RIZZOLO
US Patent 9,911,651
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael RIZZOLO
US Patent 9,911,651
Structure and fabrication method for enhanced mechanical strength crack stop
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael Rizzolo
US Patent 9,899,338
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael Rizzolo
US Patent 9,899,338
Self-aligned airgaps with conductive lines and vias
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael Rizzolo
US Patent 9,899,256
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael Rizzolo
US Patent 9,899,256
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
Benjamin David Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael RIZZOLO
US Patent App. 15/199,321
Benjamin David Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael RIZZOLO
US Patent App. 15/199,321
2017
Forming deep airgaps without flop over
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H Deprospo, Huai Huang, Christopher J Penny, Michael Rizzolo
US Patent 9,837,305
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H Deprospo, Huai Huang, Christopher J Penny, Michael Rizzolo
US Patent 9,837,305
High-density mim capacitors
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael Rizzolo
US Patent App. 15/639,585
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael Rizzolo
US Patent App. 15/639,585
Structure and fabrication method for enhanced mechanical strength crack stop
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H Deprospo, Huai Huang, Christopher J Penny, Michael Rizzolo
US Patent 9,824,982
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H Deprospo, Huai Huang, Christopher J Penny, Michael Rizzolo
US Patent 9,824,982
Heterogeneous metallization using solid diffusion removal of metal interconnects
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael Rizzolo
US Patent 9,793,206
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael Rizzolo
US Patent 9,793,206
High-density mim capacitors
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael Rizzolo
US Patent App. 15/091,043
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael Rizzolo
US Patent App. 15/091,043
Forming chamferless vias using thermally decomposable porefiller
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael R Rizzolo
US Patent 9,685,366
Benjamin D Briggs, Lawrence A Clevenger, Bartlet H DeProspo, Huai Huang, Christopher J Penny, Michael R Rizzolo
US Patent 9,685,366