Jeng-bang Yau  Jeng-bang Yau photo       

contact information

Research Staff Member
Thomas J. Watson Research Center, Yorktown Heights, NY USA
  +1dash914dash945dash2279

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Professional Associations

Professional Associations:  American Physical Society (APS)  |  IEEE Electron Devices Society (EDS)  |  IEEE Member


2017

Germanium lateral bipolar transistor with silicon passivation
Chan, Kevin K and Ning, Tak H and Yau, Jeng-Bang
US Patent 9,799,756
Abstract

Sensors including complementary lateral bipolar junction transistors
Gordon, Michael S and Ning, Tak H and Rodbell, Kenneth P and Yau, Jeng-Bang
US Patent 9,659,979
Abstract

Contact resistance reduction by III-V Ga deficient surface
Ando, Takashi and Chan, Kevin K and Rozen, John and Yau, Jeng-Bang and Zhu, Yu
US Patent 9,679,967
Abstract

One time programmable read-only memory (ROM) in SOI CMOS
Ning, Tak H and Shahidi, Ghavam G and Yau, Jeng-Bang
US Patent 9,704,569
Abstract

Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown base
Cai, Jin and Ning, Tak H and Yau, Jeng-Bang and Zafar, Sufi
US Patent 9,625,409
Abstract

Memory arrays using common floating gate series devices
Chan, Kevin K and Hekmatshoartabari, Bahman and Ning, Tak H and Yau, Jeng-Bang
US Patent 9,659,655
Abstract

Complementary SOI lateral bipolar transistors with backplate bias
Ning, Tak H and Yau, Jeng-Bang
US Patent 9,536,788
Abstract


2016

Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same
Cheng, Szu-Lin and Chu, Jack Oon and Lauer, Isaac and Yau, Jeng-Bang
US Patent 9,385,122
Abstract

Graded buffer epitaxy in aspect ratio trapping
Cheng, Cheng-Wei and Majumdar, Amlan and Shiu, Kuen-Ting and Yau, Jeng-Bang
US Patent 9,496,347
Abstract

Magnetic-field and magnetic-field gradient sensors based on lateral SOI bipolar transistors
Ning, Tak H and Yau, Jeng-Bang
US Patent 9,515,198
Abstract

Nanowire field effect transistor (FET) and method for fabricating the same
Chu, Jack O and Cheng, Szu Lin and Lauer, Isaac and Shiu, Kuen-Ting and Yau, Jeng-Bang
US Patent 9,431,301
Abstract

High speed bipolar junction transistor for high voltage applications
Cai, Jin and Ning, Tak H and Yau, Jeng-Bang
US Patent 9,331,097
Abstract

Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown
Cai, Jin and Chan, Kevin K and Ning, Tak H and Yau, Jeng-Bang and Yoon, Joonah
US Patent 9,437,718
Abstract

SOI lateral bipolar transistors having surrounding extrinsic base portions
Cai, Jin and Chan, Kevin K and Ning, Tak H and Yau, Jeng-Bang
US Patent 9,502,504
Abstract

Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown
Cai, Jin and Chan, Kevin K and Ning, Tak H and Yau, Jeng-Bang and Yoon, Joonah
US Patent 9,318,585
Abstract

Charge sensors using inverted lateral bipolar junction transistors
Cai, Jin and Ning, Tak H and Yau, Jeng-Bang and Zafar, Sufi
US Patent 9,377,543
Abstract


2015

Field effect transistor (FET) with self-aligned contacts, integrated circuit (IC) chip and method of manufacture
Cheng, Szu-Lin and Chu, Jack O and Lauer, Isaac and Yau, Jeng-Bang
US Patent 9,177,956
Abstract

Method of forming well-controlled extension profile in MOSFET by silicon germanium based sacrificial layer
Cheng, Szu-Lin and Chu, Jack O and Lauer, Isaac and Yau, Jeng-Bang
US Patent 9,184,290
Abstract

Lateral bipolar sensor with sensing signal amplification
Cai, Jin and Ning, Tak H and Yau, Jeng-Bang and Zafar, Sufi
US Patent App. 14/751,101
Abstract

Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same
Cheng, Szu-Lin and Chu, Jack Oon and Lauer, Isaac and Yau, Jeng-Bang
US Patent 9,059,205
Abstract

Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact
Cheng, Szu-Lin and Chu, Jack O and Lauer, Isaac and Yau, Jeng-Bang
US Patent 9,059,095
Abstract

Compound finfet device including oxidized iii-v fin isolator
Cheng, Szu-Lin and Lauer, Isaac and Shiu, Kuen-Ting and Yau, Jeng-Bang
US Patent App. 14/748,532
Abstract

Semiconductor-on-insulator (soi) lateral heterojunction bipolar transistor having an epitaxially grown base
Cai, Jin and Chan, Kevin K and Christopher, PD and Ning, Tak H and Yau, Jeng-Bang
US Patent App. 14/684,669
Abstract

Lateral bipolar transistors having partially-depleted intrinsic base
Cai, Jin and Ning, Tak H and Shahidi, Ghavam G and Yau, Jeng-Bang
US Patent 9,059,195
Abstract


2014

Low cost fabrication of double box back gate silicon-on-insulator wafers with subsequent self aligned shallow trench isolation
Dennard, Robert H and Greenberg, David R and Majumdar, Amlan and Shi, Leathen and Yau, Jeng-Bang
US Patent 8,877,606
Abstract

Lateral bipolar transistor with base extension region
Cai, Jin and Chan, Kevin K and Christopher, PD and Ning, Tak H and Yau, Jeng-Bang and Yoon, Joonah
US Patent App. 14/494,626
Abstract

Lateral silicon-on-insulator bipolar junction transistor radiation dosimeter
Cai, Jin and Leobandung, Effendi and Ning, Tak H and Yau, Jeng-Bang
US Patent 8,895,995
Abstract

Method for radiation monitoring
Cai, Jin and Leobandung, Effendi and Ning, Tak H and Yau, Jeng-Bang
US Patent 8,912,030
Abstract

Metal-free integrated circuits comprising graphene and carbon nanotubes
Lin, Yu-Ming and Yau, Jeng-Bang
US Patent 8,803,131
Abstract

Fabrication of graphene nanoelectronic devices on SOI structures
Lin, Yu-Ming and Yau, Jeng-Bang
US Patent 8,673,703
Abstract


2013

Isolation structures for SOI devices with ultrathin SOI and ultrathin box
Dennard, Robert H and Khater, Marwan H and Shi, Leathen and Yau, Jeng-Bang
US Patent 8,492,838
Abstract

Method of replacing silicon with metal in integrated circuit chip fabrication
Chan, Kevin K and D'emic, Christopher and Kim, Young-Hee and Park, Dae-Gyu and Yau, Jeng-Bang
US Patent 8,580,635
Abstract

Method of replacing silicon with metal in integrated circuit chip fabrication
Chan, Kevin K and D'emic, Christopher and Kim, Young-Hee and Park, Dae-Gyu and Yau, Jeng-Bang
US Patent App. 14/031,120
Abstract

Method of forming isolation structures for SOI devices with ultrathin SOI and ultrathin box
Dennard, Robert H and Khater, Marwan H and Shi, Leathen and Yau, Jeng-Bang
US Patent 8,586,426
Abstract

Radiation hardened transistors based on graphene and carbon nanotubes
Lin, Yu-Ming and Yau, Jeng-Bang
US Patent 8,546,246
Abstract

On-chip radiation dosimeter
Gordon, Michael S and Rodbell, Kenneth P and Yau, Jeng-Bang
US Patent 8,476,683
Abstract

Fully depleted silicon on insulator neutron detector
Gordon, Michael S and Rodbell, Kenneth P and Yau, Jeng-Bang
US Patent 8,614,111
Abstract

Sacrificial replacement extension layer to obtain abrupt doping profile
Cheng, Szu-Lin and Chu, Jack O and Lauer, Isaac and Yau, Jeng-Bang
US Patent App. 14/025,380
Abstract

On-chip radiation dosimeter
Gordon, Michael S and Rodbell, Kenneth P and Yau, Jeng-Bang
US Patent 8,361,829
Abstract

Hybrid double box back gate silicon-on-insulator wafers with enhanced mobility channels
Dennard, Robert H and Ouyang, Qiqing C and Yau, Jeng-Bang
US Patent 8,587,063
Abstract

Method of manufacturing a semiconductor device using a self-aligned opl replacement contact and patterned hsq and a semiconductor device formed by same
Cheng, Szu-Lin and Chu, Jack O and Lauer, Isaac and Yau, Jeng-Bang
US Patent App. 13/964,286
Abstract


2012

Ultra-sensitive radiation dosimeters
Lin, Yu-Ming and Yau, Jeng-Bang
US Patent App. 13/610,173
Abstract

Soi cmos structure having programmable floating backplate
Cai, Jin and Dennard, Robert H and Khakifirooz, Ali and Ning, Tak H and Yau, Jeng-Bang
US Patent App. 13/612,036
Abstract

Dosimeter powered by passive RF absorption
Cabral Jr, Cyril and Gordon, Michael S and Koester, Steven J and Murray, Conal E and Rodbell, Kenneth P and Rossnagel, Stephen M and Wisnieff, Robert L and Yau, Jeng-bang
US Patent 8,212,218
Abstract

Graphene based switching device having a tunable bandgap
Lin, Yu-Ming and Yau, Jeng-Bang
US Patent 8,105,928
Abstract


2011

FET radiation monitor
Gordon, Michael and Koester, Steven and Rodbell, Kenneth and Yau, Jeng-Bang
US Patent 8,080,805
Abstract

Back-gated fully depleted SOI transistor
Chang, Leland and Ji, Brian L and Kumar, Arvind and Majumdar, Amlan and Saenger, Katherine and Shi, Leathen and Yau, Jeng-Bang
US Patent 8,030,145
Abstract


2010

Magnetoelectronic devices based on colossal magnetoresistive thin films
Ahn, Charles and Klein, Lior and Basson, Yosef and Hong, Xia and Yau, Jeng-Bang
US Patent 7,684,147
Abstract

Low cost fabrication of double box back gate silicon-on-insulator wafers with built-in shallow trench isolation in back gate layer
Dennard, Robert H and Greenberg, David R and Majumdar, Amian and Shi, Leathen and Yau, Jeng-Bang
US Patent 7,767,546
Abstract