Hiroyuki (Hiro) Miyazoe

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Research Staff Member - Plasma processings
Thomas J. Watson Research Center, Yorktown Heights, NY USA
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Professional Associations

Professional Associations: American Vacuum Society | The Japan Society of Applied Physics

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More information: Linkedin Profile | Terashma Group - the University of Tokyo | Laboratory for Mechanics of Materials and Nanostructures - EMPA

2019

Solution for PCM and OTS Intermixing on Cross-Point Phase Change Memory
W.C. Chien, L.M. Gignac, N. Gong, C.W. Yeh, C.H. Yang, R.L. Bruce, H.Y. Cheng, J.M. Papalia, H. Miyazoe, C.W. Cheng, W. Kim, I.T. Kuo, F. Carta, A. Ray, E.K. Lai, M. BrightSky, H.L. Lung
2019 IEEE 11th International Memory Workshop (IMW)
Abstract threshold voltage, thermal treatment, phase change memory, optoelectronics, electronic engineering, degradation, computer science, annealing

2018

High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
S. Lee, C. -W. Cheng, X. Sun, C. D' Emic, H. Miyazoe, M. Frank, J. Bruley, P. Hashemi, J. Ott, T. Ando, W. Spratt, G. Cohen, R. Bruce, M. Lofaro, J. Patel, H. Schmid, L. Czornomaz, V. Narayanan, R. T. Mo, and E. Leobandung
IEEE International Electron Device Meeting (IEDM'18), IEEE, 2018

High Endurance Self-Heating OTS-PCM Pillar Cell for 3D Stackable Memory
C. W. Yeh, W. C. Chien, R. L. Bruce, H. Y. Cheng, I. T. Kuo, C. H. Yang, A. Ray, H. Miyazoe, W. Kim, F. Carta, E. K. Lai, M. BrightSky, H. L. Lung
2018 IEEE Symposium on VLSI Technology
Abstract thermal stability, pillar, engineering, electronic engineering, electrode, doping, annealing

A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory
Wei-Chih Chien, Chiao-Wen Yeh, Robert L. Bruce, Huai-Yu Cheng, I. T. Kuo, Chih-Hsiang Yang, A. Ray, Hiroyuki Miyazoe, W. Kim, Fabio Carta, Erh-Kun Lai, Matthew J. BrightSky, Hsiang-Lan Lung
IEEE Transactions on Electron Devices 65(11), 5172-5179, 2018
Abstract threshold voltage, pillar, physics, phase change memory, electronic engineering, electrode, doping, back end of line, annealing

Nitride etching with hydrofluorocarbons. II. Evaluation of C4H9F for tight pitch Si3N4 patterning applications
Nathan Marchack, Hiroyuki Miyazoe, Robert L. Bruce, Hsinyu Tsai, Masahiro Nakamura, Takefumi Suzuki, Azumi Ito, Hirokazu Matsumoto, Sebastian U. Engelmann, Eric A. Joseph
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36(3), 031801, 2018

Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-kâ€² nitride spacer etch processes
Miyazoe, Hiroyuki and Marchack, Nathan and Bruce, Robert L and Zhu, Yu and Nakamura, Masahiro and Miller, Eric and Kanakasabapathy, Sivananda and Suzuki, Takefumi and Ito, Azumi and Matsumoto, Hirokazu and others
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36(3), 032201, AVS, 2018
Abstract

2017

Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm 2
A. Pyzyna, H. Tsai, M. Lofaro, L. Gignac, H. Miyazoe, R. Bruce, C. M. Breslin, M. Brink, D. Klaus, M. Guillorn, C. Lavoie, K. P. Rodbell, D.-G. Park, E. Joseph
2017 IEEE International Interconnect Technology Conference (IITC), pp. 1-3
Abstract surface finish, scattering, scanning electron microscope, materials science, lamellar structure, electronic engineering, electrical resistivity and conductivity, copper interconnect, copper, conductivity

High Performance and Low Leakage Current InGaAs-on-Silicon FinFETs with 20 nm Gate Length
X. Sun, C. Demic, C.-W. Cheng, A. Majumdar, Y. Sun, E. Cartier, R. Bruce, M. Frank, H. Miyazoe, K.-T. Shiu, S. Lee, J. Rozen, J. Patel, T. Ando, W.-B. Song, M. Lofaro, M. Krishnan, B. Obrodovic, K.-T. Lee, H. Tsai, W.-E. Wang, W. Spratt, K. Chan, S. Lee, P. Hashemi, M. Khojaste
VLSI Tech. Symp., 2017

Effects of ultraviolet and vacuum ultraviolet synchrotron radiation on organic underlayers to modulate line-edge roughness of fine-pitch poly-silicon patterns
Miyazoe, Hiroyuki and Engelmann, Sebastian U and Guillorn, Michael A and Pei, Dongfei and Li, Weiyi and Lauer, Jason L and Leon Shohet, J and Fuller, Nicholas CM
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35(5), 05C306, AVS, 2017

Electron beam generated plasmas: Characteristics and etching of silicon nitride
Walton, SG and Boris, DR and Hern{\'a}ndez, SC and Lock, EH and Petrova, Tz B and Petrov, GM and Jagtiani, AV and Engelmann, SU and Miyazoe, H and Joseph, EA
Microelectronic Engineering168, 89--96, Elsevier, 2017

Highly selective dry etching of polystyrene-poly (methyl methacrylate) block copolymer by gas pulsing carbon monoxide-based plasmas
Miyazoe, Hiroyuki and Jagtiani, Ashish V and Tsai, Hsin-Yu and Engelmann, Sebastian U and Joseph, Eric A
Journal of Physics D: Applied Physics 50(20), 204001, IOP Publishing, 2017

Directed self-assembly patterning strategies for phase change memory applications
Bruce, Robert L and Fraczak, Gloria and Papalia, John M and Tsai, HsinYu and BrightSky, Matt and Miyazoe, Hiroyuki and Zhu, Yu and Engelmann, Sebastian U and Lung, Hsiang-Lan and Masuda, Takeshi and others
SPIE Advanced Lithography, pp. 101490J--101490J, 2017
Abstract

2016

Applications for Surface Engineering Using Atomic Layer Etching - Invited Paper
John Papalia, Nathan Marchack, Robert Bruce, Hiroyuki Miyazoe, Sebastian Engelmann, Eric A. Joseph
Solid State Phenomena255, 41-48, 2016
Abstract surface engineering, semiconductor, process window, process capability, plasma parameters, nanotechnology, multiple patterning, materials science, electronic engineering, dennard scaling, composite material, channel

Over the course of the past few years, the semiconductor industry has continued to invent and innovate profoundly to adhere to Moores Law and Dennard scaling. At each of the technology nodes starting with 45nm, new materials and integration techniques, such as high-K & metal gates, double patterning techniques, and now 3D FinFet / Trigate device geometries are being introduced in order to maintain device performance. This places a large burden on unit process development to accommodate and deliver advanced process capability and is growing the need for the ultimate etch solution: etching with atomic layer precision. Atomic layer etching is a promising path to answer the processing demands of thin high mobility channel devices on the angstrom scale. Self-limiting reactions, discrete reaction & activation steps, or extremely low ion energy etch plasmas are some of the pathways being pursued for precise sub-nanometer material removal. In this invited paper, previously published in SPIE, the ability to achieve atomic layer etch precision is reviewed in detail for a variety of material sets and implementation methods. For a cyclic approach most similar to a reverse ALD scheme, the process window to achieve a truly self-limited atomic layer etch process is identified and the limitations as a function of controlling the adsorption step, the irradiation energy, and the reaction process are examined. Alternative approaches, including processes to enable pseudo-ALE precision, are then introduced and results from their application investigated. While these new plasma-enhanced atomic layer etch (PE-ALE) processes show encouraging results, most patterning applications are best realized by optimizations through discharge chemistry and/or plasma parameters. Significant improvements however were obtained when applying PE-ALE approaches to small pitch patterns. In particular the increased selectivity to OPL seems to offer a potential benefit for patterning high aspect ratio features.

Applications for Surface Engineering Using Atomic Layer Etching-Invited Paper
Papalia, John and Marchack, Nathan and Bruce, Robert and Miyazoe, Hiroyuki and Engelmann, Sebastian and Joseph, Eric A
Solid State Phenomena, pp. 41--48, 2016

Evaluation of ALE processes for patterning
Papalia, JM and Marchack, N and Bruce, RL and Miyazoe, H and Engelmann, SU and Joseph, EA
SPIE Advanced Lithography, pp. 97820H--97820H, 2016

High chi block copolymer DSA to improve pattern quality for FinFET device fabrication
Tsai, Hsinyu and Miyazoe, Hiroyuki and Vora, Ankit and Magbitang, Teddie and Arellano, Noel and Liu, Chi-Chun and Maher, Michael J and Durand, William J and Dawes, Simon J and Bucchignano, James J and others
SPIE Advanced Lithography, pp. 977910--977910, 2016

Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
Jagtiani, Ashish V and Miyazoe, Hiroyuki and Chang, Josephine and Farmer, Damon B and Engel, Michael and Neumayer, Deborah and Han, Shu-Jen and Engelmann, Sebastian U and Boris, David R and Hern{'a}ndez, Sandra C and others
Journal of Vacuum Science & Technology A 34(1), 01B103, AVS: Science & Technology of Materials, Interfaces, and Processing, 2016

Application of cyclic fluorocarbon/argon discharges to device patterning
Metzler, Dominik and Uppireddi, Kishore and Bruce, Robert L and Miyazoe, Hiroyuki and Zhu, Yu and Price, William and Sikorski, Ed S and Li, Chen and Engelmann, Sebastian U and Joseph, Eric A and others
Journal of Vacuum Science & Technology A 34(1), 01B102, AVS: Science & Technology of Materials, Interfaces, and Processing, 2016

2015

Resistivity of copper interconnects beyond the 7 nm node
Pyzyna, A and Bruce, R and Lofaro, M and Tsai, H and Witt, C and Gignac, L and Brink, M and Guillorn, M and Fritz, G and Miyazoe, H and others
VLSI Technology (VLSI Technology), 2015 Symposium on, pp. T120--T121
Abstract

Defect mitigation of plasma-induced delamination of TiW/Cu from SiN x layer in thin si interposer processing with glass carriers
Sukumaran, Vijay and Tran-Quinn, Thuy and Lubguban, Jorge and Webster, Dave and Hedrick, Brittany and Cox, Harry and Wood, James and Miyazoe, Hiroyuki and Yan, Hongwen and Joseph, Eric and others
2015 IEEE 65th Electronic Components and Technology Conference (ECTC), pp. 916--921

First realization of the piezoelectronic stress-based transduction device
Chang, Josephine B and Miyazoe, Hiroyuki and Copel, Matthew and Solomon, Paul M and Liu, Xiao-Hu and Shaw, Thomas M and Schrott, Alejandro G and Gignac, Lynne M and Martyna, Glenn J and Newns, Dennis M
Nanotechnology 26(37), 375201, IOP Publishing, 2015

Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch
Tsai, HsinYu and Miyazoe, Hiroyuki and Cheng, Joy and Brink, Markus and Dawes, Simon and Klaus, David and Bucchignano, James and Sanders, Daniel and Joseph, Eric and Colburn, Matthew and others
SPIE Advanced Lithography, pp. 942314--942314, 2015

Research life in Yorktown Heights [partially in Japanese]
Hiroyuki Miyazoe
Plasma Electronics62, 24, 2015

Pathway to the PiezoElectronic Transduction Logic Device
Paul M Solomon, Brian Bryce, Marcelo Kuroda, Ryan Keech, Smitha Shetty, Thomas Shaw, Matthew Copel, Li-Wen Hung, Alejandro Schrott, Christine Armstrong, others
Nano letters, ACS Publications, 2015

2014

Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
H Tsai, H Miyazoe, JB Chang, J Pitera, CC Liu, M Brink, I Lauer, J Cheng, S Engelmann, J Rozen, JJ Bucchignano, DP Klaus, S Dawes, L Gignac, C Breslin, EA Joseph, DP Sanders, ME Colburn, MA Guillorn
Electron Devices Meeting (IEDM), 2014 IEEE International

Two-dimensional pattern formation using graphoepitaxy of PS-b-PMMA block copolymers for advanced FinFET device and circuit fabrication
H Tsai, JW Pitera, H Miyazoe, S Bangsaruntip, SU Engelmann, CC Liu, JY Cheng, JJ Bucchignano, DP Klaus, EA Joseph, DP Sanders, ME Colburn, MA Guillorn
ACS Nano, 2014

2013

Directed self-assembly pattern generation of basic FinFET circuit constructs
Tsai, H and Miyazoe, Hiroyuki and Cheng, Joy and Pitera, Jed and Liu, Chi-Chun and Holmes, Steven and Sanders, Dan and Joseph, Eric and Liebmann, Lars and Lai, Kafai and others
Proc. SPIE, pp. 8680--32, 2013

Reaction yields of diamondoid synthesis by plasmas generated in supercritical xenon
Sven Stauss, Tomoki Shizuno, Hiroyuki Miyazoe, Eiichiro Kiyooka, Kazuo Terashima
Transactions of the Materials Research Society of Japan 38(4), 619--623, ä¸€èˆ¬ç¤¾å›£æ³•äºº æ—¥æœ¬ MRS, 2013

Pattern transfer of directed self-assembly patterns for CMOS device applications
H Tsai, H Miyazoe, S Engelmann, CC Liu, L Gignac, J Bucchignano, D Klaus, C Breslin, E Joseph, J Cheng, D Sanders, M Guillorn
J. Micro/Nanolith. MEMS MOEMS., 2013

The PiezoElectronic switch: A path to low energy electronics
PM Solomon, B Bryce, R Keech, TM Shaw, M Copel, LW Hung, A Schrott, TN Theis, W Haensch, SM Rossangel, others
Energy Efficient Electronic Systems (E3S), 2013 Third Berkeley Symposium on, pp. 1--2

Advanced Plasma Etch for the 10nm node and Beyond
E. A. Joseph, S. U. Engelmann, H. Miyazoe, R. L. Bruce, M. Nakamura, T. Suzuki, M. Hoinkis, Y Zhang, GS Oehrlein, Q Lin
Advanced Etch Technology For Nanopatterning Ii8685, 2013

Carbon Nanotube Complementary Wrap-Gate Transistors
Aaron D Franklin, Siyuranga O Koswatta, Damon B Farmer, Joshua T Smith, Lynne Gignac, Chris M Breslin, Shu-Jen Han, George S Tulevski, Hiroyuki Miyazoe, Wilfried Haensch, others
Nano letters 13(6), 2490--2495, American Chemical Society, 2013

Pattern transfer of directed self-assembly (DSA) patterns for CMOS device applications
Hsin-Yu Tsai, Hiroyuki Miyazoe, Sebastian Engelmann, Sarunya Bangsaruntip, Isaac Lauer, Jim Bucchignano, Dave Klaus, Lynne Gignac, Eric Joseph, Joy Cheng, others
SPIE Advanced Lithography, pp. 86850L--86850L, 2013

2012

Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around
Aaron D Franklin, Siyuranga O Koswatta, Damon Farmer, George S Tulevski, Joshua T Smith, Hiroyuki Miyazoe, Wilfried Haensch
Electron Devices Meeting (IEDM), 2012 IEEE International, pp. 4--5

Sub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly
H Tsai, H Miyazoe, S Engelmann, B To, E Sikorski, J Bucchignano, D Klaus, CC Liu, J Cheng, D Sanders, N Fuller, M Guillorn
J. Vac. Sci. Technol. B 30, 2012

Patterning of CMOS Device Structures for 40-80nm Pitches and Beyond
S. U. Engelmann, R. Martin, R. L. Bruce, H. Miyazoe, N. C. M. Fuller, W. S. Graham, E. M. Sikorski, M. Glodde, M. Brink, H. Tsai, J. Bucchignano, D. Klaus, E. Kratschmer, M. A. Guillorn, Y Zhang, G Oehrlein, Q Lin
Advanced Etch Technology For Nanopatterning8328, 2012

2011

Systematic studies on reactive ion etch-induced deformations of organic underlayers
M Glodde, S Engelmann, M Guillorn, S Kanakasabapathy, E Mclellan, CS Koay, Y Yin, M Sankarapandian, JC Arnold, K Petrillo, M Brink, H Miyazoe, E Anuja de Silva, H Yusuff, K Yoon, Y Wei, C Wu, P Rao Varasani
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 2011

Synthesis of Diamondoids by Supercritical Xenon Discharge Plasma
T. Shizuno, H. Miyazoe, K. Saito, S. Stauss, M. Suzuki, T. Sasaki, K. Terashima
Japanese Journal of Applied Physics 50(3), 0207, 2011

2010

Synthesis of sp $\^{}$\{$3$\}$ $ bonded carbon nano materials by supercritical fluid plasma
Shizuno, Tomoki and Stauss, Sven and Miyazoe, Hiroyuki and Nakahara, Sho and Saito, Koya and Suzuki, Minoru and Sasaki, Takehiko and Terashima, Kazuo
Bulletin of the American Physical Society55, APS, 2010
Abstract

Synthesis of the Higher-Order Diamondoid Hexamantane Using Low-Temperature Plasmas Generated in Supercritical Xenon
Stauss, Sven and Miyazoe, Hiroyuki and Shizuno, Tomoki and Saito, Koya and Sasaki, Takehiko and Terashima, Kazuo
Japanese Journal of Applied Physics 49(7R), 070213, IOP Publishing, 2010
Abstract

Plasmas in Super critical Fluids -Fundamentals and Applications- 2. Direct Current and Alternate Current Plasmas
H. Miyazoe, S. Stauss, K. Terashima
Journal of Plasma and Nuclear Fusion Research 86(6), 305, 2010
in Japanese

High rate deposition of ZnO thin films by a small-scale inductively coupled argon plasma generated in open air
S. Stauss, Y. Imanishi, H. Miyazoe, K. Terashima
Journal of Physics D: Applied Physics43, 155203, IOP Publishing, 2010

Improving the metallic content of focused electron beam-induced deposits by a scanning electron microscope integrated hydrogen-argon microplasma generator
H. Miyazoe, I. Utke, H. Kikuchi, S. Kiriu, V. Friedli, J. Michler, K. Terashima
Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures 28(4), 744--750, AVS, 2010

Localized high-rate deposition of zinc oxide films at atmospheric pressure using inductively coupled microplasma
S. Stauss, Y. Imanishi, H. Miyazoe, K. Terashima
Thin Solid Films 518(19), 5391--5395, Elsevier, 2010

Pulsed Laser Ablation Synthesis of Diamond Molecules in Supercritical Fluids
S. Nakahara, S. Stauss, H. Miyazoe, T. Shizuno, M. Suzuki, H. Kataoka, T. Sasaki, K. Terashima
Applied Physics Express 3(9), 6201, 2010

2009

Development of a dielectric-barrier discharge enhanced microplasma jet
S. Kiriu, H. Miyazoe, F. Takamine, M. Sai, J.H. Choi, T. Tomai, K. Terashima
Applied Physics Letters94, 191502, 2009

Ultrahigh-frequency microplasma jet as a low-power, high-density, and localized ions/radicals source
H. Miyazoe, M. Sai, S. Stauss, K. Terashima
Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and Films 27(1), 9--12, AVS, 2009

2008

Controlled focused electron beam-induced etching for the fabrication of sub-beam-size nanoholes
H. Miyazoe, I. Utke, J. Michler, K. Terashima
Applied Physics Letters92, 043124, 2008

2007

Size reduction in crystal grains in LiNb 0.5 Ta 0.5 O 3 thin films by controlling nucleation density during thermal plasma spray chemical vapor deposition
Miyazoe, H and Yamaki, T and Kataoka, H and Terashima, K
Thin solid films 515(18), 7269--7274, Elsevier, 2007
Abstract

Development and Characterization of Thermoelectron Enhanced Microplasma Devices for the Generation of Plasmas in Micro-sized Capillaries
S. Stauss, H. Miyazoe, M. Sai, K. Terashima
TRANSACTIONS-MATERIALS RESEARCH SOCIETY OF JAPAN 32(2), 531, MATERIALS RESEARCH SOCIETY OF JAPAN, 2007

Size reduction in crystal grains in LiNb< sub> 0.5 Ta< sub> 0.5 O< sub> 3 thin films by controlling nucleation density during thermal plasma spray chemical vapor deposition
H. Miyazoe, T. Yamaki, H. Kataoka, K. Terashima
Thin solid films 515(18), 7269--7274, Elsevier, 2007

2006

Effect of the substrate temperature and deposition rate on the initial growth of thin lithium niobate-tantalate films deposited from a thermal plasma
SA Kulinich, T. Yamaki, H. Miyazoe, H. Yamamoto, K. Terashima
Physics of the Solid State 48(5), 904--911, Springer, 2006

Graphoepitaxy of sexithiophene on thermally oxidized silicon surface with artificial periodic grooves
S. Ikeda, K. Saiki, K. Tsutsui, T. Edura, Y. Wada, H. Miyazoe, K. Terashima, K. Inaba, T. Mitsunaga, T. Shimada
Applied physics letters88, 251905, 2006

Effect of annealing on the mobility and morphology of thermally activated pentacene thin film transistors
D. Guo, S. Ikeda, K. Saiki, H. Miyazoe, K. Terashima
Journal of applied physics99, 094502, 2006

The influence of process parameters on precursor evaporation for alumina nanopowder synthesis in an inductively coupled rf thermal plasma
JW Shin, H. Miyazoe, M. Leparoux, S. Siegmann, JL Dorier, C. Hollenstein
Plasma Sources Science and Technology15, 441, IOP Publishing, 2006

Hiroyuki (Hiro) Miyazoe gen_feedback_link(leftr, rightr);