Richard G (Ricki) Southwick  Richard G (Ricki) Southwick photo         

contact information

Characterization and Reliability
Albany, NY USA
  +1dash518dash292dash7464

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Professional Associations

Professional Associations:  IEEE Electron Devices Society (EDS)


2021

TDDB Reliability in Gate-All-Around Nanosheet
Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Tian Shen, Ernest Wu, Richard Southwick, Jingyun Zhang, Veeraraghavan Basker, Dechao Guo
2021 IEEE International Reliability Physics Symposium (IRPS), pp. 1-6, IEEE
Abstract   time dependent gate oxide breakdown, threshold voltage, field effect transistor, reliability, logic gate, dielectric strength, transistor, nanosheet, optoelectronics, materials science

Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs
Nilotpal Choudhury, Tarun Samadder, Ravi Tiwari, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra
2021 IEEE International Reliability Physics Symposium (IRPS), pp. 1-8, IEEE
Abstract   negative bias temperature instability, threshold voltage, field effect transistor, scaling, voltage, temperature measurement, condensed matter physics, materials science, dimension, acceleration factor


2020

Multiphonon-Electron Coupling Enhanced Defect Generation and Breakdown Mechanism in MOL New Spacer Dielectrics for 7nm/5nm Technology Nodes and Beyond
Ernest Wu, Richard Southwick, Sanjay Mehta, Baozhen Li, Miaomiao Wang
2020 IEEE International Electron Devices Meeting (IEDM), IEEE
Abstract   quantum tunnelling, electron, dielectric, anode, thermal conduction, coupling, electric field, materials science, chemical physics, generation process

NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor
Huimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe, Curtis Durfee, Shogo Mochizuki, Ruqiang Bao, Richard Southwick, Maruf Bhuiyan, Basker Veeraraghavan
2020 IEEE International Reliability Physics Symposium (IRPS), pp. 1-6, IEEE
Abstract   negative bias temperature instability, nanosheet, transistor, optoelectronics, materials science, reliability, orientation

Selective Enablement of Dual Dipoles for Near Bandedge Multi-Vt Solution in High Performance FinFET and Nanosheet Technologies
R. Bao, K. Watanabe, J. Zhang, H. Zhou, M. Sankarapandian, J. Li, S. Pancharatnam, P. Jamison, R. G Southwick, M. Wang, J. J Demarest, J. Guo, N. Loubet, V. Basker, D. Guo, V. Narayanan, B. Haran, H. Bu, M. Khare
2020 IEEE Symposium on VLSI Technology, IEEE
Abstract   dipole, threshold voltage, nanosheet, transistor, logic gate, optoelectronics, reduction, compensation, silicon, materials science

A 14 nm Embedded STT-MRAM CMOS Technology
D. Edelstein, M. Rizzolo, D. Sil, A. Dutta, J. DeBrosse, M. Wordeman, A. Arceo, I. C. Chu, J. Demarest, E. R. J. Edwards, E. R. Evarts, J. Fullam, A. Gasasira, G. Hu, M. Iwatake, R. Johnson, V. Katragadda, T. Levin, J. Li, Y. Liu, C. Long, T. Maffitt, S. McDermott, S. Mehta, V. Mehta, D. Metzler, J. Morillo, Y. Nakamura, S. Nguyen, P. Nieves, V. Pai, R. Patlolla, R. Pujari, R. Southwick, T. Standaert, O. van der Straten, H. Wu, C.-C. Yang, D. Houssameddine, J. M. Slaughter, D. C. Worledge
2020 IEEE International Electron Devices Meeting (IEDM), IEEE
Abstract   cmos, magnetoresistive random access memory, tunnel magnetoresistance, node, stack, reliability, voltage, time dependent gate oxide breakdown, optoelectronics, materials science

Analysis of BTI, SHE Induced BTI and HCD Under Full V G /V D Space in GAA Nano-Sheet N and P FETs
Nilotpal Choudhury, Uma Sharma, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra
2020 IEEE International Reliability Physics Symposium (IRPS), pp. 1-6, IEEE
Abstract   threshold voltage, nano, analytical chemistry, materials science, heat effect, hot carrier degradation, p channel, temperature instability


2019

Channel Strain Dependence of Tinv in Strained Si and Si l-x Ge x FETs: Internal Strain-induced Modification of Chemical Oxidation
ChoongHyun Lee, Shogo Mochizuki, Xin Miao, Juntao Li, Richard G. Southwick
2019 Symposium on VLSI Technology, IEEE
Abstract   strain, materials science, layer, composite material, planar, biaxial strain

Direct Partition Measurement of Parasitic Resistance Components in Advanced Transistor Architectures
Zuoguang Liu, Heng Wu, Chen Zhang, Xin Miao, Huimei Zhou, Richard Southwick, Tenko Yamashita, Dechao Guo
2019 Symposium on VLSI Technology
Abstract   transistor, spreading resistance profiling, scaling, partition, parasitic element, optoelectronics, materials science, equivalent series resistance, contact resistance

Time Dependent Dielectric Breakdown of Cobalt and Ruthenium Interconnects at 36nm Pitch
H. Huang, P. S. McLaughin, J. J. Kelly, C. C. Yang, R. G. Southwick, M. Wang, G. Bonilla, G. Karve
2019 IEEE International Reliability Physics Symposium (IRPS), pp. 1-5, IEEE
Abstract   time dependent gate oxide breakdown, dielectric, dielectric strength, cobalt, ruthenium, copper interconnect, electric field, materials science, optoelectronics, reliability

SiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability Tradeoffs
R. G. Southwick, M. Wang, S. Mochizuki, X. Miao, J. Li, C. H. Lee
2019 Symposium on VLSI Technology, IEEE
Abstract   dielectric strength, cmos, relaxation, optoelectronics, materials science, channel, temperature instability

On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs
Narendra Parihar, Uma Sharma, Richard G. Southwick, Miaomiao Wang, James H. Stathis, Souvik Mahapatra
2019 IEEE International Reliability Physics Symposium (IRPS), pp. 1-8
engineering physics, engineering, analytical chemistry

Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor
Miaomiao Wang, Jingyun Zhang, Huimei Zhou, Richard G. Southwick, Robin Hsin Kuo Chao, Xin Miao, Veeraraghavan S. Basker, Tenko Yamashita, Dechao Guo, Gauri Karve, Huiming Bu, James H. Stathis
2019 IEEE International Reliability Physics Symposium (IRPS), pp. 1-6
transistor, temperature instability, optoelectronics, nanosheet, engineering, electronic engineering


2018

Differentiated Performance and Reliability Enabled by Multi-Work Function Solution in RMG Silicon and SiGe MOSFETs
R. Bao, R. G. Southwick, H. Zhou, C. H. Lee, B. P. Linder, T. Ando, D. Guo, H. Jagannathan, V. Narayanan
2018 IEEE Symposium on VLSI Technology, pp. 115-116, IEEE
Abstract   metal gate, silicon germanium, leakage, breakdown voltage, and gate, silicon, work function, logic gate, optoelectronics, materials science

Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with I d -V d characteristics
Miaomiao Wang, Richard G. Southwick, Kangguo Cheng, James H. Stathis
2018 IEEE International Reliability Physics Symposium (IRPS)
Abstract   saturation, profiling, optoelectronics, nanoscopic scale, mosfet, engineering, electronic engineering

Modeling of NBTI Kinetics in Replacement Metal Gate Si and SiGe FinFETsPart-II: AC Stress and Recovery
Narendra Parihar, Richard G. Southwick, Miaomiao Wang, James H. Stathis, Souvik Mahapatra
IEEE Transactions on Electron Devices 65(5), 1707-1713, 2018
Abstract   threshold voltage, temperature measurement, silicon germanium, silicon, physics, metal gate, germanium, duty cycle, condensed matter physics, analytical chemistry, activation energy

Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
C. H. Lee, R. G. Southwick, S. Mochizuki, J. Li, X. Miao, M. Wang, R. Bao, I. Ok, T. Ando, P. Hashemi, D. Guo, V. Narayanan, N. Loubet, H. Jagannathan
2018 IEEE International Electron Devices Meeting (IEDM), IEEE
Abstract   electron mobility, strain engineering, cmos, optoelectronics, electrostatics, materials science, conduction band, electron trapping, high electron, simulation based

Modeling of NBTI Kinetics in RMG Si and SiGe FinFETs, Part-I: DC Stress and Recovery
Narendra Parihar, Richard G. Southwick, Miaomiao Wang, James H. Stathis, Souvik Mahapatra
IEEE Transactions on Electron Devices 65(5), 1699-1706, 2018
Abstract   uncorrelated, threshold voltage, silicon germanium, physics, negative bias temperature instability, metal gate, kinetics, germanium, condensed matter physics, analytical chemistry, activation energy

Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC-AC Experimental Conditions
Narendra Parihar, Uma Sharma, Richard G. Southwick, Miaomiao Wang, James H. Stathis, Souvik Mahapatra
IEEE Transactions on Electron Devices 65(1), 23-30, 2018
Abstract   uncorrelated, ultrashort pulse, threshold voltage, temperature instability, relative dominance, physics, negative bias temperature instability, metal gate, condensed matter physics, atmospheric temperature range, analytical chemistry


2017

Understanding the interfacial layer formation on strained Si 1x Ge x channels and their correlation to inversion layer hole mobility
C. H. Lee, R. G. Southwick, R. Bao, S. Mochizuki, V. Paruchuri, H. Jagannathan
2017 Symposium on VLSI Technology, IEEE
Abstract   electron mobility, atomic layer deposition, silicon, materials science, condensed matter physics, channel, electronic engineering, atomic configuration

Interface engineering of Si 1x Ge x gate stacks for high performance dual channel CMOS
ChoongHyun Lee, Richard G. Southwick, Shogo Mochizuki, Paul Jamison, Ruqiang Bao, Rajan Pandey, Aniruddha Konar, Takashi Ando, Vijay Narayanan, Bala Haran, Hemanth Jagannathan
2017 IEEE 12th International Conference on ASIC (ASICON), pp. 573-576, IEEE
Abstract   electron mobility, carrier scattering, threshold voltage, silicon germanium, x band, silicon, scattering, optoelectronics, phonon, materials science

Fundamental limitations of existing models and future solutions for dielectric reliability and RRAM applications (invited)
E. Wu, A. Kim, T. Ando, R. Muralidhar, B. Li, R. Southwick, P. Jamison, T. Shaw, J. Stathis, G. Bonilla
2017 IEEE International Electron Devices Meeting (IEDM), IEEE
Abstract   reliability, data modeling, dielectric strength, weibull distribution, resistive random access memory, cluster analysis, range, acceleration, electronic engineering, computer science

Hot carrier reliability in ultra-scaled sige channel p-FinFETs
Miaomiao Wang, Xin Miao, James H Stathis, Richard Southwick
2017 IEEE 12th International Conference on ASIC (ASICON), pp. 666-669
Abstract   silicon germanium, silicon, optoelectronics, negative bias temperature instability, metal gate, leakage, hot carrier injection, electronic engineering, dielectric, degradation, computer science

A comparative study of strain and Ge content in Si 1x Ge x channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
C. H. Lee, S. Mochizuki, R. G. Southwick, J. Li, X. Miao, R. Bao, T. Ando, R. Galatage, S. Siddiqui, C. Labelle, A. Knorr, J. H. Stathis, D. Guo, V. Narayanan, B. Haran, H. Jagannathan
2017 IEEE International Electron Devices Meeting (IEDM), IEEE
Abstract   substrate, silicon, transistor, optoelectronics, planar, materials science, layer, logic gate, strain, channel

Modeling of NBTI time kinetics and T dependence of VAF in SiGe p-FinFETs
N. Parihar, R. Southwick, M. Wang, J. H. Stathis, S. Mahapatra
2017 IEEE International Electron Devices Meeting (IEDM), IEEE
Abstract   negative bias temperature instability, metal gate, silicon germanium, stress, electronic band structure, silicon, kinetics, voltage, materials science, condensed matter physics

Understanding the interfacial layer formation on strained Si 1- x Ge x channels and their correlation to inversion layer hole mobility
Lee, CH and Southwick, RG and Bao, R and Mochizuki, S and Paruchuri, V and Jagannathan, H
VLSI Technology, 2017 Symposium on, pp. T126--T127
Abstract

Time dependent dielectric breakdown of SiN, SiBCN and SiOCN spacer dielectrics
Southwick, RG and Wu, E and Mehta, S and Stathis, JH
Reliability Physics Symposium (IRPS), 2017 IEEE International, pp. DG--1
Abstract

Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs
Parihar, Narendra and Southwick, Richard G and Sharma, Uma and Wang, Miaomiao and Stathis, James H and Mahapatra, Souvik
Reliability Physics Symposium (IRPS), 2017 IEEE International, pp. 2D--4
Abstract


2016

Hot carrier effect in ultra-scaled replacement metal gate Si i-x Ge x channel p-FinFETs
Miaomiao Wang, Xin Miao, James H Stathis, Richard Southwick, Barry P. Linder, Derrick Liu, Ruqiang Bao, Koji Watanabe
2016 IEEE International Electron Devices Meeting (IEDM)
Abstract   silicon germanium, silicon, physics, optoelectronics, metal gate, logic gate, leakage, hot carrier injection, electronic engineering, dielectric, degradation

Selective GeO x -scavenging from interfacial layer on Si 1x Ge x channel for high mobility Si/Si 1x Ge x CMOS application
C. H. Lee, H. Kim, P. Jamison, R. G. Southwick, S. Mochizuki, K. Watanabe, R. Bao, R. Galatage, S. Guillaumet, T. Ando, R. Pandey, A. Konar, B. Lherron, J. Fronheiser, S. Siddiqui, H. Jagannathan, V. Paruchuri
2016 IEEE Symposium on VLSI Technology, pp. 1-2, IEEE
Abstract   layer, cmos, optoelectronics, materials science, channel, scavenging, electronic engineering

Engineering the electronic defect bands at the Si 1x Ge x /IL interface: Approaching the intrinsic carrier transport in compressively-strained Si 1x Ge x pFETs
ChoongHyun Lee, Richard G. Southwick, Hemanth Jagannathan
2016 IEEE International Electron Devices Meeting (IEDM)
Abstract   electron mobility, silicon germanium, silicon, scattering, phonon, x band, materials science, optoelectronics, electronic engineering, surface concentration

Process optimizations for NBTI/PBTI for future replacement metal gate technologies
Linder, Barry P and Dasgupta, A and Ando, T and Cartier, E and Kwon, U and Southwick, R and Wang, M and Krishnan, SA and Hopstaken, M and Bajaj, M and others
Reliability Physics Symposium (IRPS), 2016 IEEE International, pp. 4B--1
Abstract

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
Xie, R and Montanini, P and Akarvardar, K and Tripathi, N and Haran, B and Johnson, S and Hook, T and Hamieh, B and Corliss, D and Wang, J and others
Electron Devices Meeting (IEDM), 2016 IEEE International, pp. 2--7
Abstract

Engineering the electronic defect bands at the Si 1- x Ge x/IL interface: Approaching the intrinsic carrier transport in compressively-strained Si 1- x Ge x pFETs
Lee, ChoongHyun and Southwick, Richard G and Jagannathan, Hemanth
Electron Devices Meeting (IEDM), 2016 IEEE International, pp. 31--1
Abstract

Observation of strong reflection of electron waves exiting a ballistic channel at low energy
Vaz, Canute I and Liu, Changze and Campbell, Jason P and Ryan, Jason T and Southwick III, Richard G and Gundlach, David and Oates, Anthony S and Huang, Ru and Cheung, Kin P
AIP advances 6(6), 065212, AIP Publishing, 2016
Abstract

Selective GeO x-scavenging from interfacial layer on Si 1- x Ge x channel for high mobility Si/Si 1- x Ge x CMOS application
Lee, CH and Kim, H and Jamison, P and Southwick, RG and Mochizuki, S and Watanabe, K and Bao, R and Galatage, R and Guillaumet, S and Ando, T and others
VLSI Technology, 2016 IEEE Symposium on, pp. 1--2
Abstract

FINFET Technology Featuring High Mobility SiGe Channel for 10nm and Beyond
D. Guo, G. Karve, G. Tsutsui, K. Y. Lim, R. Robison, T. Hook, R. Vega, D. Liu, S. Bedell, S. Mochizuki, F. Lie, K. Akarvardar, M. Wang, R. Bao, S. Burns, V. Chan, K. Cheng, J. Demarest, J. Fronheiser, P. Hashemi, J. Kelly, J. Li, N. Loubet, P. Montanini,
VLSI Technology Symposium, IEEE, JSAP, 2016
Abstract


2015

Frequency-modulated charge pumping with extremely high gate leakage
Ryan, Jason Thomas and Zou, Jibin and Southwick, Richard and Campbell, Jason Paul and Cheung, Kin P and Oates, Anthony S and Huang, Ru
IEEE Transactions on Electron Devices 62(3), 769--775, IEEE, 2015
Abstract

Total ionizing dose radiation effects on 14 nm FinFET and SOI UTBB technologies
Hughes, Harold and McMarr, Patrick and Alles, Michael and Zhang, Enxia and Arutt, Charles and Doris, Bruce and Liu, Derrick and Southwick, Richard and Oldiges, Philip
Radiation Effects Data Workshop (REDW), 2015 IEEE, pp. 1--6
Abstract

A Novel ALD SiBCN Low-k Spacer for Parasitic Capacitance Reduction in FinFETs
T. Yamashita, S. Mehta, V. Basker, R. Southwick, A. Kumar, R. Kambhampati, R. Sathiyanarayanan, J. Johnson, T. Hook, S. Cohen, J. Li, A. Madan, Z. Zhu, L. Tai, Y. Yao, P. Chinthamanipeta, M. Hopstaken, Zuoguang Liu, D. Lu, F. Chen, S. Khan, et. al.
2015 Symposium on VLSI Technology and Circuits (VLSI)

NBTI in Si 0.5 Ge 0.5 RMG gate stacks—Effect of high-k nitridation
Srinivasan, P and Fronheiser, J and Siddiqui, S and Kerber, A and Edge, LF and Southwick, RG and Cartier, E
Reliability Physics Symposium (IRPS), 2015 IEEE International, pp. 2F--5
Abstract


2014

SiGe composition and thickness effects on NBTI in replacement metal gate / high- technologies
P. Srinivasan, J. Fronheiser, K. Akarvardar, A. Kerber, L. F. Edge, R. G. Southwick, E. Cartier, H. Kothari
2014 IEEE International Reliability Physics Symposium (IRPS), IEEE
Abstract   band offset, metal gate, substrate, epitaxy, materials science, degradation, optoelectronics, electronic engineering

A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies
DeSalvo, B and Morin, P and Pala, M and Ghibaudo, G and Rozeau, O and Liu, Q and Pofelski, A and Martini, S and Cass{\'e}, M and Pilorget, S and others
Electron Devices Meeting (IEDM), 2014 IEEE International, pp. 7--2
Abstract

10nm FINFET technology for low power and high performance applications
D. Guo, H Shang, Kazuyuki Seo, B Haran, T Standaert, Deepika Gupta, E Alptekin, D Bae, G Bae, D Chanemougame, others
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on, pp. 1--4

SOI FinFET versus bulk FinFET for 10nm and below
Hook, Terence B and Allibert, F and Balakrishnan, K and Doris, Bruce and Guo, Dechao and Mavilla, Narasimha and Nowak, E and Tsutsui, G and Southwick, R and Strane, J and others
2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), pp. 1--3
Abstract

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI
Seo, K-I and Haran, B and Gupta, D and Guo, D and Standaert, T and Xie, R and Shang, H and Alptekin, E and Bae, D-I and Bae, G and others
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on, pp. 1--2
Abstract

SiGe composition and thickness effects on NBTI in replacement metal gate/high-$\kappa$ technologies
Srinivasan, P and Fronheiser, J and Akarvardar, K and Kerber, A and Edge, LF and Southwick, RG and Cartier, E and Kothari, H
Reliability Physics Symposium, 2014 IEEE International, pp. 6A--3
Abstract

Reliability challenges for the 10nm node and beyond
Stathis, James H and Wang, M and Southwick, RG and Wu, EY and Linder, BP and Liniger, EG and Bonilla, G and Kothari, H
Electron Devices Meeting (IEDM), 2014 IEEE International, pp. 20--6
Abstract

Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-k spacer dielectrics
Southwick, RG and Sathiyanarayanan, R and Bajaj, M and Mehta, S and Yamashita, T and Gundapaneni, S and Pandey, RK and Wu, E and Murali, KVRM and Cohen, S and others
Reliability Physics Symposium, 2014 IEEE International, pp. BD--2
Abstract


2013

Constant shape factor frequency modulated charge pumping (FMCP)
Ryan, Jason T and Campbell, Jason P and Zou, Jibin and Cheung, Kin P and Southwick, RG and Oates, AS and Huang, Rue
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International, pp. 21--25
Abstract

Reliability monitoring for highly leaky devices
Ryan, Jason T and Campbell, Jason P and Cheung, Kin P and Suehle, John S and Southwick, RG and Oates, AS
Reliability Physics Symposium (IRPS), 2013 IEEE International, pp. 2D--5
Abstract

Frequency-modulated charge pumping: Defect measurements with high gate leakage
Ryan, Jason Thomas and Southwick, Richard G and Campbell, Jason Paul and Cheung, Kin P and Oates, Anthony S and Suehle, John S
IEEE Electron Device Letters, IEEE, 2013
Abstract


2012

Series resistance: A monitor for hot carrier stress
Campbell, Jason P and Drozdov, SA and Cheung, Kin P and Southwick, Richard G and Ryan, Jason T and Suehle, John S and Oates, AS
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International, pp. 157--160
Abstract

MOSFET low frequency noise prediction and control
Cheung, Kin P and Southwick, Richard G and Campbell, Jason P
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on, pp. 1--4
Abstract

Spectroscopic charge pumping in the presence of high densities of bulk dielectric traps
Ryan, Jason T and Southwick, Richard G and Campbell, Jason P and Cheung, Kin P and Young, CD and Suehle, JS
Reliability Physics Symposium (IRPS), 2012 IEEE International, pp. XT--1
Abstract

Channel length-dependent series resistance?
Campbell, Jason P and Cheung, Kin P and Drozdov, SA and Southwick, Richard G and Ryan, Jason T and Oates, AS and Suehle, John S
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE, pp. 1--2
Abstract

Frequency dependent charge pumping—A defect depth profiling tool?
Ryan, Jason T and Southwick, Richard G and Campbell, Jason P and Cheung, Kin P and Suehle, John S
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International, pp. 147--150
Abstract

On the contribution of bulk defects on charge pumping current
Ryan, Jason T and Southwick, Richard G and Campbell, Jason P and Cheung, Kin P and Suehle, John S
IEEE Transactions on Electron Devices 59(11), 2943--2949, IEEE, 2012
Abstract

Physical model for random telegraph noise amplitudes and implications
Southwick, Richard G and Cheung, Kin P and Campbell, Jason P and Drozdov, SA and Ryan, Jason T and Suehle, John S and Oates, AS
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE, pp. 1--2
Abstract


2011

Cryogenic to room temperature effects of NBTI in high-k PMOS devices
Southwick, Richard G and Purnell, Shem T and Rapp, Blake A and Thompson, Ryan J and Pugmire, Shane K and Kaczer, Ben and Grasser, Tibor and Knowlton, William B
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International, pp. 12--16
Abstract

When does a circuit really fail?
Ryan, Jason T and Wei, Lan and Campbell, Jason P and Southwick, Richard G and Cheung, Kin P and Oates, AS and Wong, H-SP and Suehle, J
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International, pp. 33--37
Abstract

Experimentally based methodology for charge pumping bulk defect trapping correction
Ryan, Jason T and Southwick, Richard G and Campbell, Jason P and Cheung, Kin P and Young, CD and Suehle, John S
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International, pp. 23--26
Abstract

On the “U-shaped” continuum of band edge states at the Si/SiO2 interface
Ryan, Jason T and Southwick, Richard G and Campbell, Jason P and Cheung, Kin P and Young, CD and Suehle, JS
Applied Physics Letters 99(22), 223516, AIP, 2011
Abstract

An interactive simulation tool for complex multilayer dielectric devices
Southwick, Richard G and Sup, Aaron and Jain, Amit and Knowlton, William B
IEEE Transactions on Device and Materials Reliability 11(2), 236--243, IEEE, 2011
Abstract


2010

Cryogenic Characterization of Charge Trapping in MOSFET High-k Dielectrics
Butler, Ross and Southwick III, Richard G and Knowlton, William B
2010 - scholarworks.boisestate.edu
Abstract

Development of Experimental Techniques for the Study of Negative Bias Temperature Instability in pMOSFET Devices
Butler, Ross and Southwick III, Richard G and Grasser, Dr and Kaczer, Dr and others
2010 - scholarworks.boisestate.edu
Abstract

An Investigation of Carrier Transport in Hafnium Oxide/Silicon Dioxide MOS Gate Dielectric Stacks from 5.6-400K
Southwick III, Richard G
2010 - scholarworks.boisestate.edu
Abstract

Limitations of Poole--Frenkel Conduction in Bilayer HfO2\SiO2 MOS Devices
Southwick, Richard G and Reed, Justin and Buu, Christopher and Butler, Ross and Bersuker, Gennadi and Knowlton, William B
IEEE Transactions on device and materials reliability 10(2), 201--207, IEEE, 2010
Abstract


2009

Initial Investigations of Sub-RF AC Methods for Metal-Oxide-Semiconductor Devices and Trap-Based Flash Nonvolatile Memory
Buu, Chris and Reed, Justin C and Southwick, Richard G and Yurke, Bernard
2009 - scholarworks.boisestate.edu
Abstract

Experimental Evidence for Polaron Hopping Conduction in HfO 2--A Cryogenic Study
Reed, Justin and Southwick, Richard G and Butler, Ross and Buu, Chris
2009 - scholarworks.boisestate.edu
Abstract


2008

A Novel Approach to Investigate the Reliability of Titanium Nitride/Hafnium Oxide/Silicon Dioxide/Silicon Gate Stacks
Southwick III, Richard G
2008 - scholarworks.boisestate.edu
Abstract

Temperature (5.6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO 2/SiO 2 and SiO 2 MOS Gate Stacks
Southwick, Richard G and Reed, Justin and Buu, Christopher and Bui, Hieu and Butler, Ross and Bersuker, G and Knowlton, William B
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International, pp. 48--54
Abstract

Integrating through-wafer interconnects with active devices and circuits
Jozwiak, Jim and Southwick III, Richard G and Johnson, Vaughn N and Knowlton, William B and Moll, Amy J
IEEE transactions on advanced packaging 31(1), 4--13, IEEE, 2008
Abstract


2006

Stacked dual-oxide MOS energy band diagram visual representation program (IRW student paper)
Southwick, Richard G and Knowlton, William B
IEEE Transactions on Device and Materials Reliability 6(2), 136--145, IEEE, 2006
Abstract