Chen Zhang  Chen Zhang photo         

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Exploratory Device Research
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Professional Associations

Professional Associations:  IEEE Electron Devices Society (EDS)


2017

Vertical single electron transistor formed by condensation
Cheng, Kangguo and Miao, Xin and Wenyu, XU and Zhang, Chen
US Patent 9,595,605
Abstract

Integration of vertical transistors with 3D long channel transistors
Cheng, Kangguo and Miao, Xin and Wenyu, XU and Zhang, Chen
US Patent 9,607,899
Abstract

Integrated device with PIN diodes and vertical field effect transistors
Cheng, Kangguo and Miao, Xin and Wenyu, XU and Zhang, Chen
US Patent 9,653,458
Abstract

Tensile and compressive fins for vertical field effect transistors
Cheng, Kangguo and Miao, Xin and Wenyu, XU and Zhang, Chen
US Patent 9,653,602
Abstract

Fin reveal last for finfet
Cheng, Kangguo and Miao, Xin and Wenyu, XU and Zhang, Chen
US Patent 9,698,251
Abstract

Different shallow trench isolation fill in fin and non-fin regions of finFET
Cheng, Kangguo and Xu, Peng and Zhang, Chen
US Patent 9,704,994
Abstract

Vertical field effect transistors with bottom contact metal directly beneath fins
Cheng, Kangguo and Miao, Xin and Wenyu, XU and Zhang, Chen
US Patent 9,721,845
Abstract

Transistor with air spacer and self-aligned contact
Cheng, Kangguo and Miao, Xin and Xu, Peng and Zhang, Chen
US Patent 9,721,897
Abstract

Radiation sensor, method of forming the sensor and device including the sensor
Cheng, Kangguo and Miao, Xin and Wenyu, XU and Zhang, Chen
US Patent 9,722,125
Abstract

FinFETs with controllable and adjustable channel doping
Cheng, Kangguo and Miao, Xin and Wenyu, XU and Zhang, Chen
US Patent 9,741,717
Abstract

Pillar formation for heat dissipation and isolation in vertical field effect transistors
Bi, Zhenxing and Cheng, Kangguo and Xu, Peng and Zhang, Chen
US Patent 9,748,381
Abstract

Vertical fet with selective atomic layer deposition gate
Cheng, Kangguo and Miao, Xin and Wenyu, XU and Zhang, Chen
US Patent 9,761,694
Abstract

Self-aligned source/drain junction for vertical field-effect transistor (FET) and method of forming the same
Cheng, Kangguo and Miao, Xin and Wenyu, XU and Zhang, Chen
US Patent 9,761,728
Abstract

Semiconductor device strain relaxation buffer layer
Cheng, Kangguo and Miao, Xin and Wenyu, XU and Zhang, Chen
US Patent 9,698,266
Abstract

Top contact resistance measurement in vertical FETs
Cheng, Kangguo and Liu, Zuoguang and Miao, Xin and Wenyu, XU and Zhang, Chen
US Patent 9,768,085
Abstract




Projects and Groups