Kirsten Moselund  Kirsten Moselund photo         

contact information

Research Staff Member
Zurich Research Laboratory, Zurich, Switzerland
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Professional Associations

Professional Associations:  IEEE   |  IEEE Electron Devices Society (EDS)  |  IEEE, Senior Member


2020

Monolithic III-V microdisk lasers on silicon by template-assisted selective epitaxy
Preksha Tiwari, Svenja Mauthe, Noelia Vico Trivino, Philipp Staudinger, Marilyne Sousa, Yannick Baumgartner, Markus Scherrer, Heinz Schmid, Kirsten Moselund
Semiconductor Lasers and Laser Dynamics IX11356, 2020
Abstract   silicon photonics, silicon, photonics, optoelectronics, nanolaser, materials science, lithography, lasing threshold, laser, epitaxy

Ultra-Thin III-V Photodetectors Epitaxially Integrated on Si with Bandwidth Exceeding 25 GHz
Svenja Mauthe, Yannick Baumgartner, Saurabh Sant, Qian Ding, Marilyne Sousa, Lukas Czornomaz, Andreas Schenk, Kirsten E. Moselund
2020 Optical Fiber Communications Conference and Exhibition (OFC), pp. 1-3
Abstract   silicon, scanning electron microscope, photodetector, optoelectronics, materials science, epitaxy, electronics, capacitance, bandwidth, attenuation coefficient

Exploring the Size Limitations of Wurtzite III-V Film Growth
Philipp Staudinger, Kirsten E. Moselund, Heinz Schmid
Nano Letters 20(1), 686-693, 2020
Abstract   wurtzite crystal structure, semiconductor, selective area epitaxy, photonics, optoelectronics, metastability, materials science, light emitting diode, epitaxy, diode, condensed matter physics

Two-Dimensional Oscillatory Neural Networks for Energy Efficient Neuromorphic Computing
Aida Todri-Sanial, Thierry Gil, Nadine Azemard, Jeremie Salles, Stefania Carapezzi, Eirini Karachristou, Madeleine Abernot, Siegfried Karg, Elisabetta Corti, Kirsten Moselund, Bernabe Linares-Barranco, Maria J.Avedillo, Teresa Serrano-Gotarredona, Juan Nunez, Jamila Boudaden, Armin Klumpp, Theophile Gonos, Matthieu Rousseau, Tanguy Hardelin, Ahmed Nejim
2020
Abstract   oscillatory neural network, neuromorphic engineering, intelligent decision support system, european research, efficient energy use, computing architecture, computer science, computer architecture, associative learning

Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing
Maneesha Rupakula, Junrui Zhang, Francesco Bellando, Fabien Wildhaber, Clarissa Convertino, Heinz Schmid, Kirsten Emilie Moselund, Adrian Mihai Ionescu
IEEE Journal of the Electron Devices Society8, 773-779, 2020
Abstract   silicon, semiconductor, optoelectronics, ohmic contact, materials science, indium, isfet, fin, fabrication, epitaxy

Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO on Si Oscillators
E Corti, A Khanna, K Niang, J Robertson, Kirsten Emilie Moselund, B Gotsmann, S Datta, S Karg
IEEE Electron Device Letters 41(4), 629-632, 2020
Abstract

Scaled resistively-coupled VO2 oscillators for Neuromorphic Computing
Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Adrian Ionescu, John Robertson, Siegfried Karg
Solid State Electronics168, 107729, 2020
Abstract


2019

High-Performance InGaAs-on-Silicon Technology Platform For Logic and RF Applications
Cezar B. Zota, Clarissa Convertino, Marilyne Sousa, Daniele Caimi, Kirsten Moselund, Lukas Czornomaz
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Abstract   wafer, silicon, optoelectronics, materials science, mosfet, leakage, heterojunction, fabrication, degradation, cmos

III-V vertical nanowires grown on Si by template-assisted selective epitaxy for tandem solar cells
N. V. Trivino, P. Staudinger, N. Bologna, H. Riel, K. Moselund, H. Schmid
Proc. OSA, 2019

Replacement Metal Gate InGaAs-OI FinFETs by Selective Epitaxy in Oxide Cavities
Clarissa Convertino, Cezar Zota, Heinz Schmid, Daniele Caimi, Marilyne Sousa, Kirsten Moselund, Lukas Czornomaz
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
Abstract   subthreshold slope, substrate, silicon, oxide, optoelectronics, metal gate, materials science, gate length, epitaxy, cmos compatible

Novel Integration Approach for III-V Microdisk Cavities on Si
Yannick Baumgartner, Daniele Caimi, Svenja Mauthe, Kirsten E. Moselund, Heinz Schmid, Marilyne Sousa, Thilo Stoferle, Philipp Staudinger, Preksha Tiwari, Noelia Vico Trivino
2019 IEEE 16th International Conference on Group IV Photonics (GFP)
Abstract   wafer bonding, physics, optoelectronics, laser

Monolithic integration of III-V microdisk lasers on silicon
S. Mauthe, H. Schmid, K. E. Moselund, N. Vico Trivino, M. Sousa, P. Staudinger, Y. Baumgartner, P. Tiwari, T. Stoferle, D. Caimi, M. Scherrer
2019 International Conference on Optical MEMS and Nanophotonics (OMN)
Abstract   wafer bonding, silicon, physics, photonics, optoelectronics, optical pumping, lasing threshold, laser, indium phosphide, epitaxy

Template-assisted selective epitaxy for III-V vertical nanowires on Si tandem solar cells
Noelia Vico Trivino, P. Staudinger, N. Bologna, H. Riel, K. Moselund, H. Schmid
2019 Compound Semiconductor Week (CSW)
Abstract   tandem solar cell, tandem, spectral absorption, silicon, physics, photovoltaic system, optoelectronics, nanowire, fabrication, epitaxy

Crystal Phase Tuning in Planar Films of III-V Semiconductors
Philipp Staudinger, Nicolas Tappy, Svenja Mauthe, Kirsten Moselund, Anna Fontcuberta i Morral, Heinz Schmid
2019 Compound Semiconductor Week (CSW)
Abstract   wurtzite crystal structure, template, semiconductor, planar, physics, phase tuning, optoelectronics, metalorganic vapour phase epitaxy, indium phosphide, gallium arsenide

Monolithically Integrated InP-on-Si Microdisk Lasers with Room-Temperature Operation
Svenja Mauthe, Philipp Staudinger, Noelia Vico Trivino, Marilyne Sousa, Thilo Stoferle, Heinz Schmid, Kirsten E. Moselund
2019 Conference on Lasers and Electro-Optics (CLEO)
Abstract   spontaneous emission, silicon, scanning electron microscope, physics, optoelectronics, laser, chemical vapor deposition

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)
C. Convertino, K. E. Moselund, C. B. Zota, Y. Baumgartner, P. Staudinger, M. Sousa, S. Mauthe, D. Caimi, L. Czornomaz, A. M. Ionescu
2019 IEEE International Electron Devices Meeting (IEDM)
Abstract   thermionic emission, subthreshold slope, quantum tunnelling, physics, optoelectronics, metal gate, heterojunction, field effect transistor, fabrication, doping

High-Frequency Quantum Well InGaAs-on-Si MOSFETs With Scaled Gate Lengths
Cezar B. Zota, Clarissa Convertino, Marilyne Sousa, Daniele Caimi, Kirsten Moselund, Lukas Czornomaz
IEEE Electron Device Letters 40(4), 538-541, 2019
Abstract   scattering, quantum well, mosfet, indium phosphide, indium gallium arsenide, gate oxide, electron mobility, condensed matter physics, chemistry, capacitance, analytical chemistry

Transition to the quantum Hall regime in InAs nanowire cross-junctions
J. Gooth, M. Borg, H. Schmid, N. Bologna, M. Rossell, S. Wirths, K. Moselund, K. Nielsch, H. Riel
Semicond. Sci. Technol. 34(3), 035028, 2019

Microcavity Lasers on Silicon by Template-Assisted Selective Epitaxy of Microsubstrates
Benedikt F. Mayer, Stephan Wirths, Svenja Mauthe, Philipp Staudinger, Marilyne Sousa, Joel Winiger, Heinz Schmid, Kirsten E. Moselund
IEEE Photonics Technology Letters 31(13), 1021-1024, 2019
Abstract   silicon, scanning electron microscope, physics, photoluminescence, optoelectronics, optics, lasing threshold, laser, gallium arsenide, etching, epitaxy

Facet-selective group-III incorporation in InGaAs Template Assisted Selective Epitaxy
M. Borg, L.Gignac, J. Bruley, A. Malmgren, S. Sant, C. Convertino, M. D. Rossell, M. Sousa, C. Breslin, H. Riel, K. E. Moselund, H. Schmid
Nanotechnology 30(0), 084004, 2019

InP-on-Si Optically Pumped Microdisk Lasers via Monolithic Growth and Wafer Bonding
Svenja Mauthe, Noelia Vico Trivino, Yannick Baumgartner, Marilyne Sousa, Daniele Caimi, Thilo Stoeferle, Heinz Schmid, Kirsten Moselund
IEEE Journal of Selected Topics in Quantum Electronics 25(6), 2019

VO 2 oscillators coupling for Neuromorphic Computation
Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Igor Stolichnov, Adrian Ionescu, Guofang Zhong, John Robertson, Siegfried Karg
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
Abstract   topology, state variable, resistor, relaxation oscillator, physics, oscillation, neuromorphic engineering, coupling, computation, artificial neural network


2018

Monolithic Integration of III-V on Si Applied to Lasing Micro-Cavities: Insights from STEM and EDX
M. Sousa, S. Mauthe, B. Mayer, S Wirths, H. Schmid, K.E. Moselund
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)
Abstract   silicon, scanning transmission electron microscopy, photoluminescence, nanotechnology, materials science, lasing threshold, indium gallium arsenide, gallium arsenide, epitaxy, direct and indirect band gaps

(Invited) Complementary III-V Heterojunction Tunnel FETs Monolithically Integrated on Silicon
Clarissa Convertino, Heinz Schmid, Lukas Czornomaz, Heike Riel, Saurabh Sant, Andreas Schenk, Kirsten E. Moselund
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8 85(6), 139-150, 2018
Abstract   technology development, steep slope, silicon, materials science, mosfet, heterojunction, engineering physics

Resistive Coupled VO2 Oscillators for Image Recognition
Elisabetta Corti, Bernd Gotsmann, K. Moselund, Igor Stolichnov, Adrian Ionescu, Siegfried Karg
IEEE International Conference on Rebooting Computing (ICRC) 2018, pp. 1-7
Abstract

InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
Clarissa Convertino, Cezar Zota, Heinz Schmid, Daniele Caimi, Marilyne Sousa, Kirsten Moselund, Lukas Czornomaz
Materials 12(1), 2018
Abstract   transistor, subthreshold slope, silicon, semiconductor, optoelectronics, metalorganic vapour phase epitaxy, materials science, epitaxy, doping, chemical vapor deposition

Modeling whispering gallery mode III-V micro-lasers monolithically integrated on Silicon
S. Sant, A. Schenk, B. Mayer, S. Wirths, S. Mauthe, H. Schmid, K. E. Moselund
2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
whispering gallery wave, stimulated emission, silicon, physics, optoelectronics, optics, optical pumping, nonlinear optics, laser, gallium arsenide

III-V heterostructure tunnel field-effect transistor
C Convertino, CB Zota, H Schmid, AM Ionescu, KE Moselund
Journal of Physics: Condensed Matter 30(26), 264005, IOP Publishing, 2018

Monolithically integrated InGaAs microdisk lasers on silicon using template-assisted selective epitaxy
Svenja Mauthe, Benedikt Mayer, Marilyne Sousa, Gustavo Villares, Philipp Staudinger, Heinz Schmid, Kirsten Moselund
Proc. SPIE 10672, Nanophotonics VII, 10672 - 10672 - 9, 2018

Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes
Philipp Staudinger, Svenja Mauthe, Kirsten E. Moselund, Heinz Schmid
Nano Letters 18(12), 7856-7862, 2018
PMID: 30427685

Microcavity III-V lasers monolithically grown on silicon
Benedikt Mayer, Svenja Mauthe, Yannick Baumgartner, Stephan Wirths, Joel Winniger, Philipp Staudinger, Heinz Schmid, Marilyne Souza, Lukas Czornomaz, Kirsten E. Moselund
Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV, 105401D, 2018

Monolithic Integration of III -V on silicon for photonic and electronic applications
L. Czornomaz, K. E. Moselund, H. Schmid, M. Sousa, H. Riel, B. Mayer, Y. Baumgartner, S. Wirths, S. Mauthe, C. Convertino, P. Staudinger
2018 76th Device Research Conference (DRC)
Abstract   silicon photonics, ranging, photonics, electronics, electron mobility, nanowire, heterojunction, cmos, electronic engineering, optoelectronics, physics

Dopant-Induced Modifications of GaxIn(1-x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)
Anna Fontcuberta i Morral, Kirsten E. Moselund, Heinz Schmid, Rolf Erni, Heike Riel, Luca Francaviglia, Marco Campanini, Stephan Wirths, Vasileios Theofylaktopoulos, Marta D. Rossell, Marta D. Rossell, Nicolas Bologna, Nicolas Bologna
ACS Applied Materials & Interfaces, 2018
Abstract   dopant, cathodoluminescence, contact angle, energy conversion efficiency, nanowire, epitaxy, doping, silicon, molecular physics, inorganic chemistry, materials science


2017

Investigation of InAs/GaSb tunnel diodes on SOI
C Convertino, D Cutaia, H Schmid, N Bologna, P Paletti, AM Ionescu, H Riel, KE Moselund
Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International EUROSOI Workshop and International Conference on, pp. 148--151

The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
L. E. Wernersson, A. Schenk, E. Memisevic, K. Moselund, S. Sant, H. Riel
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 273-276
Abstract   and gate, oxide, scaling, quantum tunnelling, nanowire, electronic engineering, condensed matter physics, physics

Monolithic integration of InAlAs/InGaAs quantum-well on InP-OI micro-substrates on Si for infrared light sources
L. Czornomaz, D. Caimi, K. Moselund, M. Sousa, B. Mayer, Y. Baumgartner
2017 IEEE 14th International Conference on Group IV Photonics (GFP), pp. 173-174
Abstract   indium phosphide, oxide, epitaxy, quantum well, silicon, infrared, optoelectronics, physics

Monolithic integration of multiple III-V semiconductors on Si
L. Czornomaz, K. E. Moselund, H. Schmid, H. Riel, B. Mayer, S. Mauthe, J. Gooth, S. Wirths, C. Convertino
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
Abstract   oxide, insulator, semiconductor, epitaxy, laser, optoelectronics, materials science

Uniting III-V tunnel
CUTAIA, DAVIDE and MOSELUND, KIRSTEN and SCHMID, HEINZ
III-Vs get out and about, 38, 2017
Abstract

Room temperature lasing from monolithically integrated gaas microdisks on Si
Wirths, Stephan and Mayer, Benedikt and Schmid, Heinz and L{\"o}rtscher, Emanuel and Sousa, Marilyne and Riel, Heike and Moselund, Kirsten
Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC, 2017 Conference on), pp. 1--1
Abstract

Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
Knoedler, Moritz and Bologna, Nicolas and Schmid, Heinz and Borg, Mattias and Moselund, Kirsten E and Wirths, Stephan and Rossell, Marta D and Riel, Heike
Crystal Growth & Design, ACS Publications, 2017
Abstract

How Non-ideality Effects Deteriorate the Performance of Tunnel FETs
A. Schenk, S. Sant, K. Moselund, H. Riel
2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2017), Toyoma, Japan (invited)

Monolithically integrated III-V gain material on virtual substrates on Si using template-assisted selective epitaxy
Mayer, Benedikt and Wirths, Stephan and Czornomaz, Lukas and Schmid, Heinz and Sousa, Marilyne and Riel, Heike and Moselund, Kirsten
Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC, 2017 Conference on), pp. 1--1
Abstract

Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon
Gooth, J and Schaller, V and Wirths, S and Schmid, H and Borg, M and Bologna, N and Karg, S and Riel, H
Applied Physics Letters 110(8), 083105, AIP Publishing, 2017
Abstract

The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si tunnel FETs
Schenk, Andreas and Sant, Saurabh and Moselund, Kirsten and Riel, Heike
Junction Technology (IWJT), 2017 17th International Workshop on, pp. 27--30
Abstract

Monolithic integration of III-V nanostructures for electronic and photonic applications
Mayer, B and Wirths, S and Schmid, H and Mauthe, S and Convertino, C and Baumgartner, Y and Czornomaz, L and Sousa, M and Riel, H and Moselund, KE
Low-Dimensional Materials and Devices 2017, pp. 103490L
Abstract

Investigation of InAs/GaSb tunnel diodes on SOI
C. Convertino, D. Cutaia, H. Schmid, N. Bologna, P. Paletti, A.M. Ionescu, H. Riel, K.E. Moselund
2017 EUROSOI/ULIS

High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
M. Borg, H. Schmid, J. Gooth, M. D. Rossell, D. Cutaia, M. Knoedler, N. Bologna, S. Wirths, K. E. Moselund, H. Riel
ACS Nano 11(3), 2554-2560, 2017

Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
J. Gooth, M. Borg, H. Schmid, V. Schaller, S. Wirths, K. Moselund, M. Luisier, S. Karg, H. Riel
Nano Letters 17(4), 2596-2602, 2017


2016

III-V-based hetero tunnel FETs: A simulation study with focus on non-ideality effects
Andreas Schenk, Kirsten Moselund, Saurabh Sant, Heike Riel
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 9-12
Abstract   quantum tunnelling, channel, quantization, surface roughness, field effect transistor, electronic engineering, materials science

Impact of Trap-Assisted Tunneling and Channel Quantization on InAs/Si Hetero Tunnel FETs
S. Sant, A. Schenk, K. Moselund, H. Riel
74th IEEE Annual Device Research Conference (DRC), Newark, DE, 2016

Integration of III--V heterostructure tunnel FETs on Si using Template Assisted Selective Epitaxy (TASE)
Moselund, Kirsten Emilie and Cutaia, Davide and Schmid, Heinz and Borg, Mattias and Sant, Saurabh and Schenk, Andreas and Riel, Heike
Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016, pp. 1--1
Abstract

Monolithic integration of multiple III-V semiconductors on Si for MOSFETs and TFETs
Schmid, H and Cutaia, D and Gooth, J and Wirths, S and Bologna, N and Moselund, KE and Riel, H
Electron Devices Meeting (IEDM), 2016 IEEE International, pp. 3--6
Abstract

III-V heterojunction nanowire tunnel FETs monolithically integrated on silicon
Moselund, Kirsten E and Cutaia, Davide and Schmid, Heinz and Borg, M and Sant, Saurabh and Schenk, Andreas and Riel, Heike
Nanotechnology Materials and Devices Conference (NMDC), 2016 IEEE, pp. 1--2
Abstract

Complementary III--V heterostructure tunnel FETs
Moselund, Kirsten E and Cutaia, D and Schmid, Heinz and Riel, Heike and Sant, S and Schenk, A
Solid-State Device Research Conference (ESSDERC), 2016 46th European, pp. 403--407
Abstract

Complementary III--V heterojunction lateral NW Tunnel FET technology on Si
Cutaia, Davide and Moselund, Kirsten E and Schmid, Heinz and Borg, M and Olziersky, Antonis and Riel, Heike
VLSI Technology, 2016 IEEE Symposium on, pp. 1--2
Abstract

Lateral InAs/Si p-Type Tunnel FETs Integrated on Si—Part 1: Experimental Devices
Moselund, Kirsten Emilie and Cutaia, Davide and Schmid, Heinz and Borg, Mattias and Sant, Saurabh and Schenk, Andreas and Riel, Heike
IEEE Transactions on Electron Devices 63(11), 4233--4239, IEEE, 2016
Abstract

Lateral InAs/Si p-Type Tunnel FETs Integrated on Si—Part 2: Simulation Study of the Impact of Interface Traps
Sant, Saurabh and Moselund, Kirsten and Cutaia, Davide and Schmid, Heinz and Borg, Mattias and Riel, Heike and Schenk, Andreas
IEEE Transactions on Electron Devices 63(11), 4240--4247, IEEE, 2016
Abstract

III??? V-based hetero tunnel FETs: A simulation study with focus on non-ideality effects
Schenk, Andreas and Sant, Saurabh and Moselund, Kirsten and Riel, Heike
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 9--12
Abstract

Integration of III-V heterostructure tunnel FETs on Si using Template Assisted Selective Epitaxy (TASE)
K.E. Moselund, D. Cutaia, H. Schmid, M. Borg, S. Sant, A. Schenk, H. Riel
IEEE Compound Semiconductor Week (CSW). Includes 28th Int'l Conf. on Indium Phosphide & Related Materials (IPRM) & 43rd Int'l Symp. on Compound Semiconductors (ISCS), 2016

Ballistic transport and high thermopower in one-dimensional InAs nanowires
S. Karg, V. Schaller, A. Gaul, K. Moselund, H. Schmid, B. Gotsmann, J. Gooth, H. Riel
46th European Solid-State Device Research Conference (ESSDERC), 2016

Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
D. Cutaia, H. Schmid, M. Borg, K. Moselund, N. Bologna, A. Olziersky, A. Ionescu, H. Riel
Silicon Nanoelectronics Workshop (SNW), 2016

Lateral InAs/Si p-Type Tunnel FETs Integrated on Si. Part 2: Simulation Study of the Impact of Interface Traps
S. Sant, K. Moselund, D. Cutaia, H. Schmid, M. Borg, H. Riel, A. Schenk
IEEE Transactions on Electron Devices 63(11), 2016

Lateral InAs/Si p-Type Tunnel FETs Integrated on Si. Part 1: Experimental Devices
K.E. Moselund, D. Cutaia, H. Schmid, M. Borg, S. Sant, A. Schenk, H. Riel
IEEE Transactions on Electron Devices 63(11), 4233-4239, 2016

Complementary III-V Heterojunction Lateral NW Tunnel FET Technology on Si
D. Cutaia, K.E. Moselund, H. Schmid, M. Borg, A. Olziersky, H. Riel
Symposium on VLSI Technology, 2016


2015

Fabrication and Analysis of Vertical p-type InAs-Si Nanowire Tunnel FETs
D. Cutaia, K. E. Moselund, M. Borg, H. Schmid, L. Gignac, C.M. Breslin, H. Riel
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 61-64

(Invited) Comparative Simulation Study of InAs/Si and All-III-V Hetero Tunnel FETs
Schenk, Andreas and Sant, Saurabh and Moselund, Kirsten and Riel, Heike
ECS Transactions 66(5), 157--169, The Electrochemical Society, 2015
Abstract

III--V device integration on Si using template-assisted selective epitaxy
Schmid, Heinz and Borg, Mattias and Moselund, Kirsten and Gignac, Lynne and Breslin, Chris and Bruley, John and Cutaia, Davide and Riel, Heike
2015 73rd Annual Device Research Conference (DRC), pp. 255--256
Abstract

III--V device integration on Si using template-assisted selective epitaxy
Schmid, Heinz and Borg, Mattias and Moselund, Kirsten and Gignac, Lynne and Breslin, Chris and Bruley, John and Cutaia, Davide and Riel, Heike
2015 73rd Annual Device Research Conference (DRC), pp. 255--256
Abstract

III-V device integration on Si using template-assisted selective epitaxy
H. Schmid, M. Borg, K. Moselund, L. Gigna, C. Breslin, J. Bruley, D. Cutaia, H. Riel
73rd IEEE Annual Device Research Conference (DRC), 2015

Comparative Simulation Study of InAs/Si and All-III-V Hetero Tunnel FETs (invited)
Andreas Schenk, Saurabh Sant, Kirsten Moselund, Heike Riel
ECS Transations, 2015

Vertical InAs-Si Gate-All-Around Tunnel FETs Integrated on Si Using Selective Epitaxy in Nanotube Templates
D. Cutaia, K.E. Moselund, M. Borg, H. Schmid, L. Gignac, C.M. Breslin, S. Karg, E. Uccelli, H. Riel
IEEE Journal of the Electron Devices Society 3(3), 176-183, 2015

Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si
Mattias Borg, Heinz Schmid, Kirsten E. Moselund, Davide Cutaia and Heike Riel
J. Appl. Phys. 117, 144303, 2015

Template-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si
H. Schmid, M. Borg, K. Moselund, L. Gignac, C.M. Breslin, J. Bruley, D. Cutaia, H. Riel
Applied Physics Letters106, 233101, 2015


2014

III-V semiconductor nanowires for future devices
H Schmid, BM Borg, K Moselund, P Das Kanungo, G Signorello, S Karg, P Mensch, V Schmidt, H Riel
Design, Automation and Test in Europe Conference and Exhibition (DATE), pp. 1-2, 2014

Vertical III--V nanowire device integration on Si (100)
Borg, Mattias and Schmid, Heinz and Moselund, Kirsten E and Signorello, Giorgio and Gignac, Lynne and Bruley, John and Breslin, Chris and Das Kanungo, Pratyush and Werner, Peter and Riel, Heike
Nano letters 14(4), 1914--1920, ACS Publications, 2014
Abstract

Vertical III--V nanowire device integration on Si (100)
Borg, Mattias and Schmid, Heinz and Moselund, Kirsten E and Signorello, Giorgio and Gignac, Lynne and Bruley, John and Breslin, Chris and Das Kanungo, Pratyush and Werner, Peter and Riel, Heike
Nano letters 14(4), 1914--1920, ACS Publications, 2014
Abstract

Vertical III-V Nanowire Device Integration on Si(100)
Mattias Borg, Heinz Schmid, Kirsten E. Moselund, Giorgio Signorello, Lynne Gignac, John Bruley, Chris Breslin, Pratyush Das Kanungo, Peter Werner, and Heike Riel
Nano Letters 14(4), 1914, 2014


2013

In situ doping of catalyst-free InAs nanowires
H. Ghoneim, P. Mensch, H. Schmid, C. D Bessire, R. Rhyner, A. Schenk, C. Rettner, S. Karg, K. E Moselund, H. Riel, M. T Björk
Nanotechnology 23(50), 505708, IOP Publishing, 2013

Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?
Luca De Michielis, Livio Lattanzio, Kirsten E Moselund, Heike Riel, Adrian M Ionescu
Electron Device Letters, IEEE 34(6), 726-728, IEEE, 2013

Interface State Density of Single Vertical Nanowire MOS Capacitors
P. Mensch, K. Moselund, S. Karg, E. Lörtscher, M. Björk, H. Riel
IEEE Transactions on Nanotechnology 12(12), 279-282, IEEE, 2013


2012

InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs
H. Riel, K. E. Moselund, C. Bessire, M. T. Bjork, A. Schenk, H. Ghoneim, H. Schmid
2012 International Electron Devices Meeting
Abstract   subthreshold slope, silicon, optoelectronics, nanowire, materials science, heterojunction, field effect transistor, electronic engineering, doping, diode, dielectric

InAs–Si Heterojunction Nanowire Tunnel Diodes and Tunnel FETs
H. Riel, K. E. Moselund, C. Bessire, M. T. Björk, A. Schenk, H. Ghoneim, H. Schmid
Invited, 2012 IEEE International Electron Devices Meeting (IEDM), pp. 16.6.1-16.6.4

InAs-Si Nanowire Heterojunction Tunnel FETs
K.E. Moselund, H. Schmid, C. Bessire, M.T. Bjork, M.T, H. Ghoneim, H. Riel
Electron Device Letters 33(10), 1453-1455 , IEEE, 2012


2011

C-V measurements of single vertical nanowire capacitors
P. Mensch, K.E. Moselund, S. Karg, E. Lörtscher, M.T. Björk, H. Schmid, H. Riel
69th Annual Device Research Conference (DRC), pp. 119-120, 2011

Silicon nanowire tunnel fets: low-temperature operation and influence of high-gate dielectric
Moselund, Kirsten E and Bjork, Mikael T and Schmid, Heinz and Ghoneim, Hersham and Karg, Siegfried and Lortscher, E and Riess, Walter and Riel, H
IEEE Transactions on Electron Devices 58(9), 2911--2916, IEEE, 2011
Abstract

Corner Effect and Local Volume Inversion in SiNW FETs
Luca De Michielis, Kirsten Emilie Moselund, Luca Selmi, Adrian Mihai Ionescu
Nanotechnology, IEEE Transactions on 10(4), 810--816, IEEE, 2011

Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High-κ Gate Dielectric
KE Moselund, MT Björk, H. Schmid, H. Ghoneim, S. Karg, E. Lörtscher, W. Riess, H. Riel
IEEE Transactions on Electron Devices 58(9), 2911-2916, 2011

CV measurements of single vertical nanowire capacitors
P Mensch, KE Moselund, S Karg, E Lortscher, MT Bjork, H Schmid, H Riel
69th Annual Device Research Conference (DRC), pp. 119-120, 2011

Fabrication of vertical InAs-Si heterojunction tunnel field effect transistors
H Schmid, KE Moselund, MT Bjork, M Richter, H Ghoneim, CD Bessire, H Riel
69th Annual Device Research Conference (DRC), pp. 181-182, 2011


2010

VLS-grown silicon nanowires Dopant deactivation and tunnel FETs
M. T. Bjork, K. E. Moselund, H. Schmid, H. Ghoneim, S. Karg, E. Lortscher, J. Knoch, W. Riess, H. Riel
2010 Silicon Nanoelectronics Workshop, pp. 1-2
Abstract   vapor liquid solid method, silicon, quantum tunnelling, optoelectronics, nanowire, miniaturization, materials science, field effect transistor, electrical engineering, doping, dopant

Si-InAs heterojunction Esaki tunnel diodes with high current densities
MT Björk, H. Schmid, CD Bessire, KE Moselund, H. Ghoneim, S. Karg, E. Lörtscher, H. Riel
Applied Physics Letters97, 163501, 2010

The high-mobility bended n-channel silicon nanowire transistor
Kirsten Emilie Moselund, Mohammad Najmzadeh, Peter Dobrosz, Sarah H Olsen, Didier Bouvet, Luca De Michielis, Vincent Pott, Adrian M Ionescu
IEEE Transactions onElectron Devices 57(4), 866-876, 2010

VLS-grown silicon nanowires — Dopant deactivation and tunnel FETs
MT Björk, KE Moselund, H Schmid, H Ghoneim, S Karg, E Lörtscher, J Knoch, W Riess, H Riel
Silicon Nanoelectronics Workshop (SNW), pp. 1-2, 2010

Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors
K. E. Moselund, H. Ghoneim, H. Schmid, MT Björk, E. Lörtscher, S. Karg, G. Signorello, D. Webb, M. Tschudy, R. Beyeler, others
Nanotechnology 21(43), 435202, 2010

Si-InAs heterojunction Esaki tunnel diodes with high current densities
MT Bjork, H Schmid, CD Bessire, KE Moselund, H Ghoneim, S Karg, E Lortscher, H Riel
Applied Physics Letters 97(16), 163501-163501, 2010


2009

VLS-grown silicon nanowire tunnel FET
KE Moselund, H Ghoneim, MT Bjork, H Schmid, S Karg, E Lortscher, W Riess, H Riel
Device Research Conference, pp. 2--24, 2009

Comparison of VLS grown Si NW tunnel FETs with different gate stacks
KE Moselund, H Ghoneim, MT Bjork, H Schmid, S Karg, E Lortscher, W Riess, H Riel
Proceedings of the European Solid State Device Research Conference "ESSDERC'09", pp. 448-451, 2009


2008

Punch-through impact ionization MOSFET (PIMOS) : From device principle to applications
K. E. Moselund, D. Bouvet, V. Pott, C. Meinen, M. Kayal, A. M. Ionescu
European Solid-State Device Research Conference (ESSDERC), pp. 1336-1344, 2008
Abstract   static random access memory, memory cell, materials science, mosfet, impact ionization, extrinsic semiconductor, electronic engineering, dynamic random access memory, breakdown voltage, 1t sram

Investigation of Strain Profile Optimization in Gate-All-Around Suspended Silicon Nanowire FET
Najmzadeh, Mohammad and Moselund, Kirsten Emilie and Dobrosz, P and Olsen, S and ONeill, A and Ionescu, Mihai Adrian
The 38th European Solid-State Device Research Conference (IEEE ESSDERC 2008)
Abstract

Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch
KE Moselund, V Pott, D Bouvet, AM Ionescu
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on, pp. 22--23

Nanoscale strain characterisation for ultimate CMOS and beyond
Sarah H Olsen, Peter Dobrosz, Rouzet Agaiby, Yuk Lun Tsang, Olayiwola Alatise, Stephen J Bull, Anthony G O’Neill, Kirsten E Moselund, Adrian M Ionescu, Prashant Majhi, others
Materials Science in Semiconductor Processing 11(5), 271--278, Elsevier, 2008

Prospects for logic-on-a-wire
KE Moselund, D Bouvet, MH Ben Jamaa, David Atienza, Yusuf Leblebici, Giovanni De Micheli, AM Ionescu
Microelectronic Engineering 85(5), 1406--1409, Elsevier, 2008

Punch-through impact ionization MOSFET (PIMOS): From device principle to applications
KE Moselund, D Bouvet, V Pott, C Meinen, M Kayal, AM Ionescu
Solid-State Electronics 52(9), 1336--1344, Elsevier, 2008

Variability-aware design of multilevel logic decoders for nanoscale crossbar memories
MH Ben Jamaa, Kirsten E Moselund, David Atienza, Didier Bouvet, Adrian M Ionescu, Yusuf Leblebici, Giovanni De Micheli
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 27(11), 2053-2067, 2008

Fabrication and characterization of gate-all-around silicon nanowires on bulk silicon
Vincent Pott, Kirsten E Moselund, Didier Bouvet, Luca De Michielis, Adrian Mihai Ionescu
Nanotechnology, IEEE Transactions on 7(6), 733--744, IEEE, 2008


2007

Cointegration of gate-all-around MOSFETs and local silicon-on-insulator optical waveguides on bulk silicon
Moselund, Kirsten E and Bouvet, Didier and Tschuor, Lucas and Pott, Vincent and Dainesi, Paolo and Eggimann, Christoph and Le Thomas, Nicolas and Houdre, Romuald and Ionescu, Adrian M
IEEE transactions on nanotechnology 6(1), 118--125, IEEE, 2007
Abstract

Fault-tolerant multi-level logic decoder for nanoscale crossbar memory arrays
Jamaa, M Haykel Ben and Atienza, David and De Micheli, Giovanni and Moselund, Kirsten E and Bouvet, Didier and Ionescu, Adrian M and Leblebici, Yusuf
Computer-Aided Design, 2007. ICCAD 2007. IEEE/ACM International Conference on, pp. 765--772
Abstract

Abrupt current switching due to impact ionization effects in Ω-MOSFET on low doped bulk silicon
Kirsten E Moselund, Vincent Pott, Didier Bouvet, Adrian M Ionescu
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European, pp. 287--290

Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
KE Moselund, P Dobrosz, S Olsen, V Pott, L De Michielis, D Tsamados, D Bouvet, A O'Neill, AM Ionescu
Electron Devices Meeting, 2007. IEDM 2007. IEEE International, pp. 191--194


2006

Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling
KE Moselund, L Tschuor, D Bouvet, V Pott, P Dainesi, C Eggimann, N Le Thomas, R Houdr\'e, AM Ionescu
2006 - infoscience.epfl.ch

Low temperature single electron characteristics in gate-all-around MOSFETs
Vincent Pott, Didier Bouvet, Julien Boucart, Lucas Tschuor, Kirsten E Moselund, Adrian M Ionescu
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European, pp. 427--430

Local volume inversion and corner effects in triangular gate-all-around MOSFETs
Kirsten E Moselund, Didier Bouvet, Lucas Tschuor, Vincent Pott, Paolo Dainesi, Adrian M Ionescu
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European, pp. 359--362

Compact gate-all-around silicon light modulator for ultra high speed operation
KE Moselund, P Dainesi, M Declercq, M Bopp, P Coronel, T Skotnicki, AM Ionescu
Sensors and Actuators A: Physical130, 220-227, 2006